Untitled
Abstract: No abstract text available
Text: 40P2M-A EIAJ Package Code SOP40-P-525-1.27 Plastic 40pin 525mil SOP Weight g 1.59 JEDEC Code – Lead Material Alloy 42 e 21 E Recommended Mount Pad Symbol F 20 1 A A2 A1 D L L1 HE e1 I2 40 b2 c e b y Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters
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40P2M-A
OP40-P-525-1
40pin
525mil
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sop40
Abstract: 525-mil SOP40 package
Text: SANYO Semiconductor Small Outline Package 40Pin Plastic SOP40 525mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the
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40Pin
525mil)
ED-7303A)
sop40
525-mil
SOP40 package
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SOP32 525mil
Abstract: SOP32 525-mil
Text: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the
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32Pin
525mil)
ED-7303A)
SOP32 525mil
SOP32
525-mil
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SOP44-P-525-1
Abstract: No abstract text available
Text: 44P2M-A EIAJ Package Code SOP44-P-525-1.27 Plastic 44pin 525mil SOP Weight g JEDEC Code – Lead Material Alloy 42 e 23 E Recommended Mount Pad Symbol F 1 22 A A2 A1 D L L1 HE e1 I2 44 b2 c e b y A A1 A2 b c D E e HE L L1 y Detail F b2 e1 I2 Dimension in Millimeters
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44P2M-A
OP44-P-525-1
44pin
525mil
SOP44-P-525-1
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i232
Abstract: 525mil
Text: 32P2M-A Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 JEDEC Code – Weight g 1.29 Lead Material Alloy 42 e 17 E Recommended Mount Pad Symbol 1 16 F A A2 D e y L b A1 L1 HE e1 I2 32 b2 A A1 A2 b c D E e HE L L1 y c Detail F b2 e1 I2 Dimension in Millimeters
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32P2M-A
32pin
525mil
OP32-P-525-1
i232
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SOP40
Abstract: SOP40 package SOP-40 525-mil
Text: SANYO Semiconductor Small Outline Package 40Pin Plastic SOP40 525mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定（ED-7303A）に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。
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40Pin
525mil)
ED-7303A
SOP40
SOP40 package
SOP-40
525-mil
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SOP32 525mil
Abstract: SOP32
Text: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定（ED-7303A）に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。
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32Pin
525mil)
ED-7303A
SOP32 525mil
SOP32
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SOP40
Abstract: No abstract text available
Text: 40P2M-B EIAJ Package Code SOP40-P-525-1.27 Plastic 40pin 525mil SOP Weight g 1.59 JEDEC Code – Lead Material Alloy 42 e e1 21 Recommended Mount Pad 1 F Symbol L1 E A A1 A2 b c D E e HE L L1 y 20 A2 D e y b A1 L HE 40 I2 A b2 c Detail F b2 e1 I2 Dimension in Millimeters
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40P2M-B
OP40-P-525-1
40pin
525mil
SOP40
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Untitled
Abstract: No abstract text available
Text: 52P2G-A Plastic 52pin 525mil SSOP EIAJ Package Code SSOP52-P-525-0.80 JEDEC Code – Weight g 1.29 Lead Material Alloy 42 e I2 27 E F Recommended Mount Pad Symbol 1 26 A D y b A1 L e A2 L1 HE e1 52 b2 A A1 A2 b c D E e HE L L1 y c Detail F b2 e1 I2 Dimension in Millimeters
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52P2G-A
52pin
525mil
SSOP52-P-525-0
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SOP32 525mil
Abstract: No abstract text available
Text: 32P2M-B Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 Weight g 1.29 JEDEC Code – Lead Material Alloy 42 e I2 A 17 e1 32 b2 1 F Symbol L1 HE E Recommended Mount Pad A A1 A2 b c D E e HE L L1 y 16 y b L e A1 A2 D c Detail F b2 e1 I2 Dimension in Millimeters
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32P2M-B
32pin
525mil
OP32-P-525-1
SOP32 525mil
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SOP032-P-0525
Abstract: No abstract text available
Text: SMALL OUTLINE L-LEADED PACKAGE 32 PIN PLASTIC FPT-32P-M03 EIAJ code : ∗SOP032-P-0525-1 Lead pitch 50mil Nominal dimensions 525mil Standard Conforms with EIAJ:TYPE V Lead shape Gullwing Sealing method Plastic mold Total width 14.40mm 32-pin plastic SOP FPT-32P-M03
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FPT-32P-M03
OP032-P-0525-1
50mil
525mil
32-pin
FPT-32P-M03)
SOP032-P-0525
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64P2G-A
Abstract: No abstract text available
Text: 64P2G-A Plastic 64pin 525mil SSOP EIAJ Package Code SSOP64-P-525-0.80 JEDEC Code – Weight g 1.59 Lead Material Alloy 42 e I2 33 E Recommended Mount Pad F Symbol 1 32 A D y b A1 L e A2 L1 HE e1 64 b2 c Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters
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64P2G-A
64pin
525mil
SSOP64-P-525-0
64P2G-A
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Untitled
Abstract: No abstract text available
Text: HY62V8100B Series 128Kx8bit CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL-part -. 2.0V(min) data retention • Standard pin configuration -. 32 SOP - 525mil -. 32 TSOP-I - 8X20(Standard and Reversed)
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HY62V8100B
128Kx8bit
525mil
32pin
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HM628512C
Abstract: HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5SL HM628512CLP-7 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLTT-5SL HM628512CLTT-7 Hitachi DSA00207
Text: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212C (Z) Rev. 3.0 Aug. 5, 2002 Description The Hitac hi HM628512C is a 4-Mbit static R AM orga nized 512-kw ord × 8-bit. It rea liz es higher density, higher per forma nce and low powe r consumption by employing C MOS proc ess tec hnology (6- tr ansistor
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HM628512C
512-kword
ADE-203-1212C
512-kw
525-mil
400-mil
600-mil
HM628512CLFP-5SL
HM628512CLFP-7
HM628512CLP-5SL
HM628512CLP-7
HM628512CLRR-5SL
HM628512CLRR-7
HM628512CLTT-5SL
HM628512CLTT-7
Hitachi DSA00207
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character generater
Abstract: No abstract text available
Text: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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TC534200P/F
600mil
40pin
525mil
150ns
20/uA
TC534200P
TC534200P/F--
character generater
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A18D0
Abstract: TC534000AP
Text: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the
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TC534000AP/AF
288words
TC534000AP
150ns,
TC534000AP/
600mil
32pin
525mil
A18D0
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TC531024P-12
Abstract: No abstract text available
Text: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:
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TC531024P-12/15
TC531024F-12/15
120ns/150ns,
600mil
40-pin
525mil
TC531024P/F
TC531024P-12/15,
TC531024P-12
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581000P
Abstract: CXK581
Text: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this
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-10L/12L/15L
-10LL712LL/15LL
131072-word
CXK581000P/M
CXK581000P/M-10L/1OLL
100ns
CXK581000P/M-12L/12LL
120ns
CXK581000P/M-15L/15LL
150ns
581000P
CXK581
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MSM5416263
Abstract: 256x16* STATIC RAM weland SM5416
Text: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416263
144-Word
16-Bit
MSM5416263
512-word
256x16* STATIC RAM
weland
SM5416
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48-PIN
Abstract: A12C A15C LH532000B-1
Text: LH532000B-1 FEATURES CMOS 2M 256K x 8/128K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW f . 1• 2 a 7[= O E i/Ô Ë ^D C C
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LH532000B-1
8/128K
40-pin
DIP/40-pin
40-pin,
600-mil
525-mil
48-pin,
12x18
48-PIN
A12C
A15C
LH532000B-1
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3A73
Abstract: No abstract text available
Text: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at
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TC531024P/F
120ns
150ns,
600mil
40pin
525mil
3A73
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Untitled
Abstract: No abstract text available
Text: HY628400 Series •'H Y U N D A I 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and
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HY628400
512Kx8bit
HY628400
04/0ct
32pin
525mil
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Untitled
Abstract: No abstract text available
Text: HM62V8128 Series Preliminary 131,072-word x 8-bit High Speed CMOS Static RAM The Hitachi HM62V8128 is a CMOS static RAM organized 128 kword x 8 bit. It realizes higher density, h ig h er perform ance and low pow er consum ption by em ploying 0.8 |im Hi-CMOS
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HM62V8128
072-word
525-mil
460-mil
600-mil
HM62V8128P-15
150ns
HM62V8128LP-15
HM62V8128LP-15SL
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HY628400LP
Abstract: No abstract text available
Text: HY628400-I Series 'H Y U N D A I 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512KX
4b75GÃ
1DE02-11-MÃ
HY628400LP-I
HY628400LLP-I
HY628400LP
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