Untitled
Abstract: No abstract text available
Text: GM71V65803C GM71VS65803CL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V65803C
GM71VS65803CL
GM71V
65803C/CL
65803C/CL-5
65803C/CL-6
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HY514100A
Abstract: HY514100ALT HY514100AJ 4Mx1
Text: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514100A
128ms
HY514100A
HY514100ALT
HY514100AJ
4Mx1
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Untitled
Abstract: No abstract text available
Text: GM71V64803A GM71VS64803AL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V64803A
GM71VS64803AL
GM71V
4803A/AL
4803A/AL-5
4803A/AL-6
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ICS8400110I
Abstract: in 4007 diode footprint VFQFN C250 C650 ICS00110EIL MO-220 tC65L 8400110EKILF c65d
Text: Low Jitter, Telecom Rate-Conversion PLL ICS8400110I DATA SHEET General Description The ICS8400110I generates a 65.536MHz clock that is either locked to the input reference or locked to the external crystal or oscillator. In the locked mode, the reference input is continuously monitored for
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ICS8400110I
ICS8400110I
536MHz
25MHz
in 4007 diode footprint
VFQFN
C250
C650
ICS00110EIL
MO-220
tC65L
8400110EKILF
c65d
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A0-A10d
Abstract: No abstract text available
Text: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514100A
128ms
10/Jan
A0-A10d
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Untitled
Abstract: No abstract text available
Text: Low Jitter, Telecom Rate-Conversion PLL ICS8400110I DATA SHEET General Description The ICS8400110I generates a 65.536MHz clock that is either locked to the input reference or locked to the external crystal or oscillator. In the locked mode, the reference input is continuously monitored for
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ICS8400110I
ICS8400110I
536MHz
25MHz
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DEI1090
Abstract: ac dimmer dimmer LED Of74C dimmer applications circuit diagram DS-MW-01090 SOIC WB 18 SOIC 18 WB DEI1090-SES Ac to Dc led driver with pwm dimming
Text: Device Engineering Incorporated DEI1090 LED Driver with Square-Law Dimming Control 385 E. Alamo Dr. Chandler, Arizona 85225 Phone: 480 303-0822 Fax: (480) 303-0824 E-mail: [email protected] FEATURES • • • • • • • Emulates incandescent lamp ‘Square Law’ luminance curve.
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DEI1090
200HZ.
200Hz
APP16
DS-MW-01090
DEI1090-SES
ac dimmer
dimmer LED
Of74C
dimmer applications circuit diagram
SOIC WB 18
SOIC 18 WB
Ac to Dc led driver with pwm dimming
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Untitled
Abstract: No abstract text available
Text: IBM0165400B 16M x 4 12/12 DRAM Features • 16,777,216 word by 4 bit organization • Performance: • Single 3.3 ± 0.3V power supply • Fast Page Mode • CAS before RAS Refresh - 4096 cycles/Retention Time • RAS only Refresh - 4096 cycles/Retention Time
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IBM0165400B
522mW
S0j-32
400mil)
TSQP-32
400mil
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RT-6
Abstract: No abstract text available
Text: MITSUBISHI LS Is M5M4V4280J,TP,RT-6,-7,-8,-6S,-7S,-8S PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is
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M5M4V4280J
4718592-BIT
262144-WORD
18-BIT)
18-bit
RT-6
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Untitled
Abstract: No abstract text available
Text: f i f e L G S e m ï c o n C GM71V65803C GM71VS65803CL 8,388,608 WORDS x 8 BIT o ., L td . w w .,f c .iw . CMOS DYNAMIC RAM Description Pin Configuration The GM71V(S 65803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803C/CL utilizes advanced CMOS
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GM71V65803C
GM71VS65803CL
GM71V
65803C/CL
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Untitled
Abstract: No abstract text available
Text: IBM0165800B 8M x 8 12/11 DRAM Features • 8,388,608 word by 8 bit organization • Performance: -50 • Single 3.3 ± 0.3V power supply • Fast Page Mode • CAS before RAS Refresh - 4096 cycles/Retention Time • 64ms Standard Power SP Retention Time
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IBM0165800B
110ns
522mW
TSOP-32
400mil)
IBM0165800B
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Untitled
Abstract: No abstract text available
Text: IBM0165800B 8M x 8 12/11 DRAM Features • 8,388,608 word by 8 bit organization • Performance: -50 -60 jtRAC ! RAS Access Tim e 50ns 60ns jtcAC ! CAS Access Tim e 13ns ' 5ns ;1aa ! Column Address Access Tim e I 25ns 30ns |1rc I Cycle Tim e 90ns ! 11 0 ns i
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IBM0165800B
522mW
TSOP-32
400mil)
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Untitled
Abstract: No abstract text available
Text: GM71V64803A GM71VS64803AL LG S em îco n C o.X td , 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803A/AL utilizes advanced CMOS
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GM71V64803A
GM71VS64803AL
GM71V
4803A/AL
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51v18165
Abstract: 658J A8303 TC51V18165
Text: , IN TEG RATED TO SH IB A FO SH ibA M O S D IGITAL IN T EG R A TED T C 5 1 V 1 8 1 6 5 B J S / B F T S - 60 T C 5 1 V 1 8 1 6 5 B J S / B F T S - 70 CIRCUIT TECH N ICAL DATA . CIRCU IT SILICON GATE CMOS TENTATIVE DA TA 1,048,576 W O R D x 16 BIT EDO HYPER PAGE DYNAM IC RAM
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18165B
18165BJS/BFTS
SOJ42
73MAX
TC5W18165BJS/BFTS
TSOP50
51V18165BJS/B
FTS-60
35MAX
51v18165
658J
A8303
TC51V18165
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GM71V64803A
Abstract: No abstract text available
Text: GM71V64803A GM71VS64803AL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V64803A
GM71VS64803AL
GM71V
4803A/AL
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Untitled
Abstract: No abstract text available
Text: G M 71V 65803C G M 71V S65803CL LG Semicon Co.,Ltd. 8,388,608 W ORDS X 8 BIT CM OS DYNAMIC RAM Description Pin C o n fig u ratio n The GM71 V S 65803C/CL is the new generation dynam ic RAM organized 8,388,608 words by Sbits. The G M 7I V(S)65803C/CL utilizes advanced CMOS
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65803C
S65803CL
65803C/CL
65803O
GM71V65803C
GM71VS
5803CL
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Untitled
Abstract: No abstract text available
Text: • L.2 4 T B 2 S GD2 3 TDS 033 *11111 MITSUBISHI LS I s M5M4V4280JJP,RT-6,-7,-8,-6S,-7S,-8S p -^ FAST PAGE MODE 4718592-BrT 262144-WORD BY 18-BIT DYNAMIC RAM a ,1 - 0 ' " h’BCt Some P»ra DESCRIPTION This is a family of 262144-word by 18-bit dynamic RAMs,
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M5M4V4280JJP
4718592-BrT
262144-WORD
18-BIT)
18-bit
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A6310
Abstract: No abstract text available
Text: HM5164805A Series HM5165805A Series 8388608-word x 8-bit Dynamic RAM HITACHI ADE-203-458A Z Rev. 1.0 Sep. 12, 1997 Description The Hitachi HM5164805A Series, HM5165805A Series are CMOS dynamic RAMs organized 8,388,608word X 8-bit. They employ the most advanced CMOS technology for high performance and low power.
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HM5164805A
HM5165805A
8388608-word
ADE-203-458A
608word
HM5165805
400-mil
A6310
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514200 ram
Abstract: No abstract text available
Text: IBM0165400B 16M x 4 12/12 DRAM Features • 16,777,216 word by 4 bit organization • Performance: -50 • Single 3.3 ± 0.3V power supply • Fast Page Mode • CAS before RAS Refresh RAS Access Time 50 ns 60ns : tcAc GAS Access Time 13ns 15ns Colum n Address Access Time i 25ns
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IBM0165400B
110ns
522mW
0j-32
TSOP-32
400mil)
514200 ram
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TOSHIBA TSOP50-P-400
Abstract: TOSHIBA TSOP50-P-400 DIMENSIONS TC51V18165
Text: TOSHIBA TC51V18165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description TheTC51V18165BFT is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC51V18165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide
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TC51V18165BFT-70
TheTC51V18165BFT
TC51V18165BFT
DR16190695
B-147
TOSHIBA TSOP50-P-400
TOSHIBA TSOP50-P-400 DIMENSIONS
TC51V18165
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Untitled
Abstract: No abstract text available
Text: ••HYUNDAI - • HY514100A 4Mx1,Fast Page mode DESCRIPTION This fam ily is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast page mode offers high speed of random access memory within the same row. The circuit and process
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HY514100A
128ms
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