Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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NPT35015
EAR99
NDS-005
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NPT35015
Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power
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NPT35015
6000MHz
EAR99
NDS-005
NPT35015D
r04350
12061C103KAT2A
JESD22-A114
JESD22-A115
j146
NPT35015DT
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Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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PDF
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NPT35015
EAR99
NDS-005
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CY7C287
Abstract: CY7C28x CY7C277
Text: Qualification Report December, 1993, QTP 92441 Version 1.1 CY7C27x/CY7C28x FAB2 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C271/274 32K x 8 PROM Power Switch and Reprogrammable CY7C277/279 Reprogrammable 32K x 8 Registered PROM CY7C285 CY7C286/287 64K x 8 Reprogrammable Fast Column Access PROM
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CY7C27x/CY7C28x
CY7C271/274
CY7C277/279
CY7C285
CY7C286/287
CY7C277/CY7C287
256K/512KPROM
7C277-PC
256K/512K
CY7C287
CY7C28x
CY7C277
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