fast diode SOT-227
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.110W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
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APT8011JFLL
OT-227
fast diode SOT-227
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45V7
Abstract: AN-994 IRL3402 IRL3402S
Text: PD - 9.1693 IRL3402S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G ID = 85A S Description These HEXFET Power MOSFETs were designed
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IRL3402S
45V7
AN-994
IRL3402
IRL3402S
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Untitled
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JFLL
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APT8011JFLL
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.110Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JFLL
OT-227
APT8011JFLL
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IRL3402
Abstract: MOSFET 700V TO 220
Text: PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A
S These HEXFET Power MOSFETs were designed
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IRL3402
O-220
O-220
IRL3402
MOSFET 700V TO 220
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Untitled
Abstract: No abstract text available
Text: APT8011JLL 800V 51A 0.110Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JLL
OT-227
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APT8011JLL
Abstract: No abstract text available
Text: APT8011JLL 800V 51A 0.110Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JLL
OT-227
APT8011JLL
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Untitled
Abstract: No abstract text available
Text: APT50M75JLL 51A 0.075Ω 500V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JLL
OT-227
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APT50M75JFLL
Abstract: APT50M75
Text: APT50M75JFLL 500V POWER MOS 7 R 0.075Ω 51A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JFLL
OT-227
APT50M75JFLL
APT50M75
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Untitled
Abstract: No abstract text available
Text: TSP2950/TSP2951 150mA Ultra Low Dropout Positive Voltage Regulator SOP-8 TO-92 Pin Definition: 1. Output 2. Sense 3. Shutdown 4. Ground TO-252 Pin Definition: 1. Output 2. Ground 3. Input 8. Input 7. Feedback 6. Voltage tap 5. Error flag Pin Definition: 1. Input
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TSP2950/TSP2951
150mA
O-252
TSP2950/A
TSP2951/A
380mV
100mA)
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Untitled
Abstract: No abstract text available
Text: APT8011JLL 800V 51A 0.110W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses
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APT8011JLL
OT-227
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APT55M85JFLL
Abstract: No abstract text available
Text: APT55M85JFLL 550V POWER MOS 7 R 0.085Ω 51A FREDFET FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT55M85JFLL
OT-227
APT55M85JFLL
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computer smps circuit diagram
Abstract: 24 volt output smps reference design datasheet capacitor 3.3UF TS2950 5.0 TS2951 marking c07 8pin LP2951 marking ultra stable voltage reference LP2950 LP2951
Text: TS2950/TS2951 150mA Ultra Low Dropout Voltage Regulator SOP-8 Pin Definition: 1. Output 2. Sense 3. Shutdown 4. Ground TO-92 Pin Definition: 1. Output 2. Ground 3. Input 8. Input 7. Feedback 6. Voltage tap 5. Error flag TO-252 Pin Definition: 1. Input 2. Ground
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TS2950/TS2951
150mA
O-252
TS2950/A
TS2951/A
computer smps circuit diagram
24 volt output smps reference design datasheet
capacitor 3.3UF
TS2950 5.0
TS2951
marking c07 8pin
LP2951 marking
ultra stable voltage reference
LP2950
LP2951
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Untitled
Abstract: No abstract text available
Text: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description
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IRFZ44RPbF
IRFZ44
08-Mar-07
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APT50M75JLL
Abstract: GV3000
Text: APT50M75JLL 51A 0.075Ω 500V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JLL
OT-227
APT50M75JLL
GV3000
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Untitled
Abstract: No abstract text available
Text: PD - 9.893A IRFZ44S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ44S Low-profile through-hole (IRFZ44L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.028Ω G ID = 50A S Description Third Generation HEXFETs from International Rectifier
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IRFZ44S/L
IRFZ44S)
IRFZ44L)
08-Mar-07
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fast diode SOT-227
Abstract: No abstract text available
Text: APT50M75JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
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APT50M75JFLL
OT-227
fast diode SOT-227
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k300k1
Abstract: K51A ALIMENTATION LIGHT DIODE wave guide noise diode fiesta de8h Scans-0017953 "noise diode"
Text: PHILIPS K 51A R a r e gas f i l l e d MO TSE D FODE f o r u se i n wave guide systems a t th e 10 cm wave band DFODE DE SO U FF LE à gaz r a r e p o u r u t i l i s a t i o n d a n s l e s d i s p o s i t i f s , à g u id e d 'o n d e s dans l a gamme 10 cm
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p65C51
Abstract: No abstract text available
Text: HARRIS SEMÏCOND SECTOR [£ } MGE D m 4302271 Q0332fi3 T E2JHAS H L A J R R IS c CD January 1991 CMOS Asynchronous Communications -0 5 Interface A dapter ACIA Features • • • • • • • • • • • • • • • P in o u t C o m patible W ith 8 -B lt M icroprocessors
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Q0332fi3
-4234I
p65C51
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Untitled
Abstract: No abstract text available
Text: PD - 9.1697 International IÖR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V R ü S o n = 0 . 0 1 Í 2 Id = 8 5 A Description
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IRL3402
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6v8a
Abstract: 67 6283 PFZ47 BZW06-5V8 BZW06-6V4 BZW06-7V0 BZW06-7V8 DTZ10 DTZ15 P6KE10A
Text: transient voltage suppressors «TRANSIL» diodes de p rotection «TRANSIL» THOMSON-CSF Types Unidirec tional 1,5 KW PFZ 6V8 PFZ 6V8 A PFZ 7V5 PFZ 7V5 A PFZ 8V2 PFZ 8V2 A PFZ 9V1 PFZ 9V1 A PFZ 10 PFZ 10 A PFZ 11 PFZ 11 A PFZ 12 PFZ 12 A PFZ 13 PFZ 13 A PFZ 15
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BZW06-33
BZW06-37
ICTE-45C
T-ICTE-45C
BZW06-40
BZW06-44
BZW06-48
BZW06-53
BZW06-58
BZW06-64
6v8a
67 6283
PFZ47
BZW06-5V8
BZW06-6V4
BZW06-7V0
BZW06-7V8
DTZ10
DTZ15
P6KE10A
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Untitled
Abstract: No abstract text available
Text: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed
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IRL3402
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8 pin ic 9435A
Abstract: 9435a 9435A transistor c442 diode c446 transistor irfz40 RFZ4 diode c446 9435a mosfet IRFZ42N
Text: HE D I ^<355452 OQQôtilE 3 | Data Sheet No. PD-9.435A INTERNATIONAL R E C T IF IE R T-39-13 I N T E R N A T I O N A L R E C T I F I E R Ii o r I HEXFET TRANSISTORS IRFZ40 IRFZ42 N -C h a n n e l 5 0 VOLT POWER MOSFETs Product Summary 50 Volt, 0.028 Ohm HEXFET
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T-39-13
IRFZ40
IRFZ42
T0-220AB
T-39-13
C-446
8 pin ic 9435A
9435a
9435A transistor
c442 diode
c446 transistor
RFZ4
diode c446
9435a mosfet
IRFZ42N
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MSM82C51
Abstract: msm82c51a-2r
Text: O K I S e m ic o n d u c to r M S M 82C 51A -2 R S /G S /JS U N IV E R S A L S Y N C H R O N O U S A S Y N C H R O N O U S R E C E IV E R T R A N S M IT T E R G ENERAL DESCRIPTIO N The MSM82C51 A-2 is a USART Universal Synchronous A synchronous Receiver Transm itter for
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MSM82C51
MSM82CS1A-2RS/GS/JS
msm82c51a-2r
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