K4R271669F
Abstract: No abstract text available
Text: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669F
128Mbit
K4R271669F
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K4R271669E
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669E
128Mbit
K4R271669E
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K4R271669E-RcCS8
Abstract: K4R271669E
Text: Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669E
128Mbit
K4R271669E-RcCS8
K4R271669E
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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da53
Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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PD488385
da53
uPD488385FB-C60-53-BF1
uPD488385FB-C80-40-BF1
uPD488385FB-C80-45-BF1
uPD488385FB-C80-50-BF1
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Untitled
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary * Based on 128Mbit RDRAM D-die for short channel Datasheet 1.4 ver.
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K4R271669E
128Mbit
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verilog code for dual port ram with axi interface
Abstract: XC6SLX25T-2CSG324 UG473 verilog code for dual port ram with axi lite interface XC6VLX75T-2FF784 hamming code in vhdl axi wrapper blk_mem_gen verilog code for pseudo random sequence generator in state diagram of AMBA AXI protocol v 1.0
Text: LogiCORE IP Block Memory Generator v7.1 DS512 April 24, 2012 Product Specification Introduction LogiCORE IP Facts The Xilinx LogiCORE IP Block Memory Generator BMG core is an advanced memory constructor that generates area and performance-optimized memories
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DS512
verilog code for dual port ram with axi interface
XC6SLX25T-2CSG324
UG473
verilog code for dual port ram with axi lite interface
XC6VLX75T-2FF784
hamming code in vhdl
axi wrapper
blk_mem_gen
verilog code for pseudo random sequence generator in
state diagram of AMBA AXI protocol v 1.0
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da48
Abstract: uPD488448FB-C60-53-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2 DA63 DB33 circuit diagram
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM EO Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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PD488448
128M-bit
da48
uPD488448FB-C60-53-DQ1
uPD488448FF-C60-53-DQ1
uPD488448FF-C60-53-DQ2
uPD488448FF-C71-45-DQ1
uPD488448FF-C71-45-DQ2
uPD488448FF-C80-45-DQ1
uPD488448FF-C80-45-DQ2
DA63
DB33 circuit diagram
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RDRAM Clock
Abstract: No abstract text available
Text: Direct RDRAM PRELIMINARY 128/144-Mbit 256Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144-Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
RDRAM Clock
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Untitled
Abstract: No abstract text available
Text: HARRP HLA packaged Asynchronous Data Recognition and Recall Processor MH1005 APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • Lowest cost CAM in space saving HLA package • IP flow recognition searching both DA and SA within 550 ns, equivalent to 9ports of 100 Base-T Ethernet
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MH1005
215ns
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da53
Abstract: DB26 KM416RD8AC KM418RD8AC
Text: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
da53
DB26
KM418RD8AC
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Untitled
Abstract: No abstract text available
Text: Wintec Industries – OEM Embedded Design Center Where to Buy | Contact Us CONSUMER EMBEDDED OEM SUPPLY CHAIN CLOUD SERVICES DISTRIBUTION Submit SUPPORT ABOUT WINTEC Embedded OEM Home > Embedded OEM > DRAM > DDR3 DRAM DRAM DDR3
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800Mb/s
WD3SN04GX816-xxxxx-yy
512x64
256Mx8
WD3SN04GX808-xxxxx-yy
512Mx8
1066J
1066MHz
1333L
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Untitled
Abstract: No abstract text available
Text: Wintec Industries – OEM Embedded Design Center Where to Buy | Contact Us CONSUMER EMBEDDED OEM SUPPLY CHAIN CLOUD SERVICES DISTRIBUTION Submit SUPPORT ABOUT WINTEC Embedded OEM Home > Embedded OEM > DRAM > DDR3 DRAM DRAM DDR3
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800Mb/s
WD3UN04GX816-xxxxx-yy
512x64
256Mx4
WD3UN08GX816-xxxxx-yy
1024x64
512Mx4
1066J
1066MHz
1333L
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SiI3124ACBHU
Abstract: SiI3124A SiI3124 HDMI TO VGA MONITOR PINOUT 0x0000020C SiI3124-2
Text: Data Sheet SiI3124A PCI-X to Serial ATA Controller Data Sheet Document # SiI-DS-0160-C PCI-X to Serial ATA Controller Data Sheet Silicon Image, Inc. October 2006 Revision History Revision Comment Date A Derived from SiI3124-2 Datasheet Rev B 04/10/06 B Correct inconsistence sentence
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SiI3124A
SiI-DS-0160-C
SiI3124-2
SiI3124ACBHU
SiI3124
HDMI TO VGA MONITOR PINOUT
0x0000020C
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Untitled
Abstract: No abstract text available
Text: AMD Geode LX Processors Data Book May 2008 Publication ID: 33234G AMD Geode™ LX Processors Data Book 2008 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with
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33234G
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RTL code for ethernet
Abstract: altera ethernet packet generator vhdl code switch layer 2 512x64 vhdl code CRC32 vhdl code for mac interface vhdl code for multistage network CRC-32 block code error management, verilog source code fifo vhdl
Text: 10 Gigabit Ethernet MAC Core for Altera CPLDs Product Brief Version 1.4 - February 2002 1 Introduction Initially, network managers use 10 Gigabit Ethernet to provide high-speed, local backbone interconnection between large-capacity switches. 10 Gigabit Ethernet enables Internet Service
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MTIP-10GMAC-lang-arch
RTL code for ethernet
altera ethernet packet generator
vhdl code switch layer 2
512x64
vhdl code CRC32
vhdl code for mac interface
vhdl code for multistage network
CRC-32
block code error management, verilog source code
fifo vhdl
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Ba 33 bco
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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32/36-M
x16/18x8d)
/36-M
600MHz
Ba 33 bco
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001APL/AFL/AFIL/ATRLr70]V85L/10L LV SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur
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TC551001APL/AFL/AFIL/ATRLr70
V85L/10L
TC551001APL
TC551001
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Untitled
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 128/144-Mbit 256Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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128/144-Mbit
256Kx16/18x32s)
128/144-M
600MHz
DL0059-00
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TC55257C
Abstract: DIP28 TC55257CFTI TC55257CPI TC55257CSPI RS-24V TF MOMORY
Text: TOSHIBA TC55257CPI/CFI/CSPI/CFTÎ/CTRI-85L/lOL P R E L IM IN A R Y SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CP1 is a 262,144 bit CMOS slate randan access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced crcurt techniques provide both high speed and tow power features v/ith an operating cuirent of
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TC55257CPI/Cn/CSPI/CFn/CTRI-85L/10L
TC55257CPI
TC55257CP1
TC55257C
I-85L/1
DIP28
TC55257CFTI
TC55257CPI
TC55257CSPI
RS-24V
TF MOMORY
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2b256
Abstract: SRM2B256SLMX55 mx55 2b256slm
Text: SRM2B256SLMX55/70/10 256K-BIT STATIC RAM • Wide Temperature Range • Extremely Low Standby Current • Access Time 100ns 2.7V 55ns (4.5V) • 32,768 Words x 8-Bit Asynchronous • DESCRIPTION T h e S R M 2 B 2 5 6 S L M X is a lo w v o lta g e o p e ra tin g 3 2 ,7 6 8 w o rd s x 8 -b it a syn c h ro n o u s , static, ra n d o m
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SRM2B256SLMX55/70/10
256K-BIT
100ns
00-97-M
2b256
SRM2B256SLMX55
mx55
2b256slm
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ^ I E C _¿¿PD43256B / M OS IN T E G R A T E D C IR C U IT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The itPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
itPD43256B
iPD43256B
28-pin
32-pin
----I/03
/JPD43256BGW-9KL
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512x 8 ROM
Abstract: 1K x 8 static ram
Text: LSA2010 ¿ ¿ 6 Tw o M icron HCMOS Structured A rra y TM LSI LO G IC 000979 c o r p o r a t io n Lòuf General Description The LSA2010 is a member of the 2-micron drawn, (1.4-micron effective HCMOS family of Structured Arrays offered by LSI LOGIC Corporation. These very
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LSA2010
LSA2010
512x96
512x120
512x64
512x32
512x16
512x8
Telex-172153
767/1185/20K/IM/J
512x 8 ROM
1K x 8 static ram
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SHARP 20 WZ 51
Abstract: No abstract text available
Text: O M M K K LH5 2 C 5 V 1 1 Contents 1. Description 2. Pin Configuration 2 . 3. Truth Table 2 3 4. Block Diagram * . 3 5. Absolute Maximum Ratings 4 6. 4 Recommended DC Operating Conditions 7. DC Electrical Characteristics
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