Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    512MB 8MX32 DDR DRAM Search Results

    512MB 8MX32 DDR DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    512MB 8MX32 DDR DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ddr ram repair

    Abstract: 32MX16 DDR repair SQ12-010 4MX16 8MX16
    Text: Selecting a Die Product • Stacked die offers smallest package, lower cost, improved reliability • SDR/DDR, LP-SDR, LP-DDR, PSRAM • 1.8V, 2.5V and 3.3V • Speed and temperature grades • Technical support, assembly information, SIP/ MCP level testing


    Original     		PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    TSOP 86 Package

    Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
    Text: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16


    Original     		PDF 128Mb 256Mb 16Mx4 32Mx4 64Mx4 PC100/133 16Mx8 32Mx8 4Mx16 TSOP 86 Package A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin

    16M X 32 SDR SDRAM

    Abstract: IS42VM16400K is66wve2m16 IS42SM16100G is66wvc4m16 ISSI IS42S16400j IS66WVC4M16ALL CRAM 256mb IS42RM16800G
    Text: Known Good Die KGD /Wafer Level Memories Introduction Die-level customers require a memory partner who can meet their many unique needs for high quality, long term support, guaranteed availability, and low total cost of ownership. ISSI is a provider of high quality specialty memory solutions for


    Original     		PDF

    512MB 8Mx32 DDR DRAM

    Abstract: No abstract text available
    Text: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		PDF SU5320835D4F0CU SM5320835D4F0CG SB5320835D4F0CG 8Mx32 100-pin 8Mx16 DDR266A, 512MB 8Mx32 DDR DRAM

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    46LR32800F

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32800F 32Bits IS43/46LR32800F 32-bit l85oC) 8Mx32 IS43LR32800F-6BLI 90-ball -40oC 46LR32800F Mobile DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32800F 32Bits IS43/46LR32800F 32-bit IS43LR32800F-6BLI 90-ball -40oC 8Mx32 IS46LR32800F-6BLA1

    IS43LR32800F-6BLI

    Abstract: IS46LR32800F-6BLA1 152-Ball LPD-D LPDDR2 PoP
    Text: IS43/46LR32800F Preliminary Information 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32800F 32Bits IS43/46LR32800F 32-bit IS43LR32800F-6BLI 90-ball -40oC 8Mx32 IS46LR32800F-6BLA1 152-Ball LPD-D LPDDR2 PoP

    46LR32800G

    Abstract: Mobile DDR SDRAM IS43LR32800G
    Text: IS43LR32800G, IS46LR32800G 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800G is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43LR32800G, IS46LR32800G 32Bits IS43/46LR32800G 32-bit 8Mx32 IS46LR32800G-5BLA1 90-ball IS46LR32800G-6BLA1 46LR32800G Mobile DDR SDRAM IS43LR32800G

    IS43LR32800G

    Abstract: No abstract text available
    Text: IS43LR32800G, IS46LR32800G Preliminary Information 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800G is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43LR32800G, IS46LR32800G 32Bits IS43/46LR32800G 32-bit -40oC 105oC) 8Mx32 IS46LR32800G-5BLA2 90-ball IS43LR32800G

    PC133 registered reference design

    Abstract: 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714
    Text: HM5225645F-B60 HM5225325F-B60 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit × 4-bank/2-Mword × 32-bit × 4-bank PC/100 SDRAM ADE-203-1014C Z Rev. 1.0 Oct. 1, 1999 Description The Hitachi HM5225645F is a 256-Mbit SDRAM organized as 1048576-word × 64-bit × 4-bank. The Hitachi


    Original     		PDF HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014C HM5225645F 256-Mbit 1048576-word PC133 registered reference design 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714

    Untitled

    Abstract: No abstract text available
    Text: I S43LR32160B, I S46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF S43LR32160B, S46LR32160B 32Bits 46LR32160B 32-bit 16Mx32 IS46LR32160B-6BLA1 90-ball

    46LR32160B

    Abstract: Mobile DDR SDRAM 152-Ball 152-Ball PoP
    Text: IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43LR32160B, IS46LR32160B 32Bits IS43/46LR32160B 32-bit 16Mx32 IS43LR32160B-6BLI 90-ball -40oC 46LR32160B Mobile DDR SDRAM 152-Ball 152-Ball PoP

    K4X56323PN-8G

    Abstract: K4X56323PN
    Text: Rev. 1.0, Mar. 2010 K4X56323PN 256Mb N-die Mobile DDR SDRAM 8x13, 90FBGA, 8M x32 VDD / VDDQ = 1.8V / 1.8V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4X56323PN 256Mb 90FBGA, K4X56323PN-8G K4X56323PN

    46LR32320B

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32320B 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32320B 32Bits IS43/46LR32320B 32-bit 32Mx32 IS46LR32320B-5BLA1 90-ball IS46LR32320B-6BLA1 -40oC 46LR32320B Mobile DDR SDRAM

    46LR32320B

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32320B Advanced Information 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32320B 32Bits IS43/46LR32320B 32-bit 32Mx32 IS43LR32320B-5BLI 90-ball IS43LR32320B-6BLI -40oC 46LR32320B Mobile DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32320B 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32320B 32Bits IS43/46LR32320B 32-bit 32Mx32 IS43LR32320B-5BLI 90-ball IS43LR32320B-6BLI -40oC

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32320B Preliminary Information 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32320B 32Bits IS43/46LR32320B 32-bit 32Mx32 IS43LR32320B-5BLI 90-ball IS43LR32320B-6BLI -40oC

    winband

    Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
    Text: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM


    OCR Scan     		PDF 300mm winband W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV

    W25X128

    Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
    Text: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM


    OCR Scan     		PDF 300mm W25X128 W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV