K703
Abstract: Intel Pentium 586 MM334
Text: Extract from the online catalog PPC 5117 This item is no longer available. Should you have any questions, please contact our Sales Team. Order No.: 2900548 The illustration can vary depends on the configuration
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LC6523
Abstract: KBR-2.0MWS 6526 eprom SANYO Replacement transistor list 6529F LC6529L 51171 transistor bc 577
Text: Ordering number : EN*5117 CMOS LSI LC6529N, LC6529F, LC6529L 4-Bit Microcomputer for Small-Scale Control Applications Preliminary Overview The LC6529N/F/L provides the basic architecture and instruction set of the Sanyo LC6500 Series of 4-bit singlechip microcomputers in a version specially for small-scale
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LC6529N,
LC6529F,
LC6529L
LC6529N/F/L
LC6500
LC6529F
LC6529H.
LC6523
KBR-2.0MWS
6526 eprom
SANYO Replacement transistor list
6529F
LC6529L
51171
transistor bc 577
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Untitled
Abstract: No abstract text available
Text: 19-5117; Rev 1; 5/10 16-Bit Microcontrollers with Infrared Module and Optional USB S 1.70V to 3.6V Operating Voltage The MAXQ612/MAXQ622 are low-power, 16-bit MAXQM microcontrollers designed for low-power applications including universal remote controls, consumer electronics, and white goods. Both devices use a lowpower, high-throughput, 16-bit RISC microcontroller.
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16-Bit
MAXQ612/MAXQ622
MAXQ622
MAXQ612/MAXQ622
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Untitled
Abstract: No abstract text available
Text: 19-5117; Rev 2; 5/11 16-Bit Microcontrollers with Infrared Module and Optional USB Features The MAXQ612/MAXQ622 are low-power, 16-bit MAXQM S High-Performance, Low-Power, 16-Bit RISC Core microcontrollers designed for low-power applications including universal remote controls, consumer electronics, and white goods. Both devices use a lowpower, high-throughput, 16-bit RISC microcontroller.
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16-Bit
MAXQ612/MAXQ622
MAXQ622
MAXQ612/MAXQ622
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FR4 dielectric constant 4.6
Abstract: RG6 ATTENUATION AN-806 RG179 RG63 FR4 dielectric constant at 2.4 Ghz alpha industries catalog velocity of propagation of FR4
Text: fax id: 5117 Using HOTLink with Long Copper Cables Overview Skin Effect The use of HOTLink data communications products to drive copper media is documented in a Cypress application note titled “Driving Copper Cables with HOTLink.” Long transmission lines those that cannot be treated as lossless present
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Untitled
Abstract: No abstract text available
Text: 19-5117; Rev 0; 2/10 16-Bit Microcontrollers with Infrared Module and Optional USB S 1.70V to 3.6V Operating Voltage The MAXQ612/MAXQ622 are low-power, 16-bit MAXQM microcontrollers designed for low-power applications including universal remote controls, consumer electronics, and white goods. Both devices use a lowpower, high-throughput, 16-bit RISC microcontroller.
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16-Bit
MAXQ612/MAXQ622
MAXQ622
T4477
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Untitled
Abstract: No abstract text available
Text: 19-5117; Rev 2; 5/11 16-Bit Microcontrollers with Infrared Module and Optional USB Features The MAXQ612/MAXQ622 are low-power, 16-bit MAXQM S High-Performance, Low-Power, 16-Bit RISC Core microcontrollers designed for low-power applications including universal remote controls, consumer electronics, and white goods. Both devices use a lowpower, high-throughput, 16-bit RISC microcontroller.
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16-Bit
MAXQ612/MAXQ622
MAXQ622
MAXQ612/MAXQ622
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kbr 4.0M
Abstract: TM 511720 TI 51173 transistor LC6523
Text: Ordering number: EN%5117 CMOS LSI No. * 5117 LC6529N, 6529F, 6529L 4-Bit Microcomputer for Small-Scale Control Applications Preliminary Overview The LC6529N/F/L provides the basic architecture and instruction set of the Sanyo LC6500 Series of 4-bit single
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LC6529N,
6529F,
6529L
LC6529N/F/L
LC6500
LC6529F
LC6529H.
kbr 4.0M
TM 511720
TI 51173 transistor
LC6523
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211CAS
Abstract: HY5117404B ceam A10C HY511 BATX19
Text: •HYUNDAI H Y 5 1 1 7 4 0 4 B S e r ie s 4M x 4-bit CMOS DRAM with Extended Data Out P R E L IM IN A R Y DESCRIPTION T h e H Y 5117 404 B is the new generation and fast dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4-bit. The H Y 5117 404 B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117404B
D45-00-MAY95
Mb75Gflfl
HY5117404BJ
HY5117404BLJ
HY5117404BAT
211CAS
ceam
A10C
HY511
BATX19
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ls7474
Abstract: ic ls7474 dot matrix lcd sed 1503 EEG Block diagram eeg circuit examples ls7474 ttl SED1500series KKZ 09 8255-2 SED1502
Text: 09-JAN-E002 14:08 02- it 1- UON:EPSON EUROPE ELECTR. 49 S9 14 5117 7 ; 1 6:23 ;W - z l 'J 'J t E D g IS ìÉ S J AN:419 EEG S. 001^03E 1042 5 8 7 5 6 2 4 1/ MF016-01 SUWA SEIKOSHA O - t o K u dc, o technical manual SED1500series DOT M ATRIX LCD DRIVER
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09-JAN-E00E
SED1500series
001/03E
MF016-01
09-JAN-200E
00E/03E
ls7474
ic ls7474
dot matrix lcd sed 1503
EEG Block diagram
eeg circuit examples
ls7474 ttl
SED1500series
KKZ 09
8255-2
SED1502
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4mx4
Abstract: MN5060
Text: •HYUNDAI H Y 5 1 17 4 0 4 B , H Y 5 1 16 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION T h is fa m ily is a 16M bit d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith E x te n d e d D a ta O u t m od e C M O S D R A M s. E xte n d e d d a ta o u t m od e is a kind o f pa ge m ode w h ich is u se fu l fo r th e read o p e ra tio n . T h e c irc u it and p ro c e s s
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HY5117404B
HY5116404B
A0-A11)
4mx4
MN5060
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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HM5117800BLTT6
Abstract: No abstract text available
Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5,1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800BLTT6
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lh5117
Abstract: DIP24-P-600
Text: LH5117 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) The chip select input provides high speed access in
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LH5117
LH5117H:
24-pin,
600-mil
300-mil
450-mil
24-PIN
DIP24-P-600
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D1130
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 62974 Product Preview 4K x 12 Bit Synchronous S tatic RAM with Output Registers and Output Enable The MCM62974 is a 49,152 bit synchronous static random access memory organized as 4096 words o f 12 bits, fabricated using M otorola's second-generation high-performance
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MCM62974
62974FN20
MCM62974FN25
MCM62974FN30
D1130
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Untitled
Abstract: No abstract text available
Text: STI328100D1 -xxVG 72-PIN SO-DIMMS 8M X 32 DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI328100D1 is a 8M x 32 bits Dynamic RAM high density memory module. The Simple Technology STI328100D1 consist of four CMOS 8M x 8 bits DRAMs in 34pin TSOP package mounted on a 72-pin glass epoxy substrate.
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STI328100D1
-50VG
-60VG
-70VG
110ns
130ns
72-PIN
34pin
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MCM6264
Abstract: mcm6264p20 MCM6264BP25 MCM6264BP
Text: MOTOROLA H SEM ICO NDUCTO R TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim ing strobes, while CMOS circuitry reduces power consum ption and provides tor
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MCM6264
MCM6264
300-mil
CM6264P15
MCM6264P20
MCM6264BP25
MCM6264BP35
MCM6264NJ15
MCM6264BP
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Untitled
Abstract: No abstract text available
Text: SEC NEC Electronics Inc. MC-424256A36BH/FH 262,144 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-424256A36BH/FH is a fast-page dynamic RAM module organized as 262,144 words by 36 bits and designed to operate from a single + 5-volt power sup
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MC-424256A36BH/FH
36-Bit
MC-424256A36BH/FH
72-Pin
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MCM6264P20
Abstract: MCM6264P mcm6264bp25 mcm6264bnj35 MCM6264BP MCM6264 motorola 5118 setup MCM6264BP35 MCM6264BP-35 6264 static RAM
Text: nOTOKOLA SC HEriORY/ASIC MOTOROLA S IE ]> b3b?251 QOflBTSe 7 b l • M0T3 ■ SEM ICO ND U C TO R mmmammt TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim
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MCM6264
MCM6264
b3b72Sl
300-mil
MCM6264P15
MCM6264P20
MCM6264BP25
MCM6264BP35
MCM6264P
mcm6264bnj35
MCM6264BP
motorola 5118 setup
MCM6264BP-35
6264 static RAM
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HM62V8128FP-12
Abstract: HM62V8128FP-15 HM62V8128LFP-12 HM62V8128LP-12 HM62V8128LP-15 HM62V8128P-12 HM62V8128P-15 TTC-02 Hitachi Scans-001
Text: HM62V8128 Series Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Description Ordering Information The H itachi H M 62V 8128 is a CM O S static RAM organized 128 kword X 8 bit. It realizes h ig h er d e n sity , h ig h er p erform an ce and lo w
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HM62V8128
131072-Word
525-mil
460-mil
600-mil
HM62V8128FP-12
HM62V8128FP-15
HM62V8128LFP-12
HM62V8128LP-12
HM62V8128LP-15
HM62V8128P-12
HM62V8128P-15
TTC-02
Hitachi Scans-001
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KBR-480B13
Abstract: m1104
Text: TO SH IB A TMP47C451B CM OS 4-Bit M icrocontroller TMP47C451BN The TMP47C451B is a high performance 4-bit single chip microcomputer based on the TLCS-47 CM OS series w ith a DTMF generator and a large-capacity RAM for repertory dialing applications, and which is highly
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TMP47C451B
TMP47C451BN
TMP47C451B
TLCS-47
TMP47C451BN
P-SDIP30-400-1
TMP47C952AE
TMP47P451VN
CSB480E16
KBR-480B13
m1104
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1 7 4 0 0 4,194,304-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CM OS silicon gate process technology.
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MSM5117400
MSM5117400
304-word
cycles/32ms
A0-A10
b7Z4240
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HY5116400BT
Abstract: No abstract text available
Text: -HYUNDAI • HY5117400B, HY5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this
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HY5117400B,
HY5116400B
A0-A11)
HY5116400BT
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Untitled
Abstract: No abstract text available
Text: HM62V8128 Series 131072-Word X Product Preview 8-Bit High Speed CMOS Static RAM D escription O rd e rin g In fo rm atio n The H itachi H M 62V 8128 is a CM OS static RAM organized 128 kw ord X 8 bit. It realizes h ig h e r d en sity , h ig h e r p erfo rm a n ce and low
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HM62V8128
131072-Word
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