CHUMD3GP
Abstract: chumd
Text: CHENMKO ENTERPRISE CO.,LTD CHUMD3GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-88/SOT-363 * High current gain.
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SC-88/SOT-363)
SC-88/SOT-363
CHDTA114E
CHDTC114E
100OC
-40OC
50m100m
CHUMD3GP
chumd
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CHUMF18GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management Dual Transistor CHUMF18GP Tr1:VOLTAGE 50Volts CURRENT 150 mAmpere DTr2:VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Power management circuit FEATURE * Small surface mounting type. (SC-88/SOT-363)
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CHUMF18GP
50Volts
SC-88/SOT-363)
2SA1774
CHDTC144E
SC-88/SOT-363
2SA1774
100OC
CHUMF18GP
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CHUMD5GP
Abstract: chumd
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor DTr1:VOLTAGE 50 Volts DTr2:VOLTAGE 50 Volts CHUMD5GP CURRENT 30 mAmpere CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-88/SOT-363
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SC-88/SOT-363)
SC-88/SOT-363
CHDTA143X
CHDTC144E
CHUMD5GP
chumd
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pa3017
Abstract: 8ohm 1W speaker
Text: UNISONIC TECHNOLOGIES CO., LTD PA3017 CMOS IC 2W STEREO AUDIO AMPLIFIER DESCRIPTION As a stereo audio speaker which is operating on a single 5V supply, the UTC PA3017 is capable of delivering 2W of output power per channel into 3Ω loads with less than 1% THD+N. Way of
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PA3017
PA3017
PA3017L
QW-R502-184
8ohm 1W speaker
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CHIMD8GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHIMD8GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-74/SOT-457 * High current gain.
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SC-74/SOT-457)
SC-74/SOT-457
CHDTA144T
CHDTC144T
SC-74/SOT
-200m
-100m
100OC
-100u
-500u
CHIMD8GP
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DTC114ECA
Abstract: No abstract text available
Text: DTC114ECA NPN DIGITAL TRANSISTOR 3 P b Lead Pb -Free 1 2 SOT-23 Features: (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25℃)
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DTC114ECA
OT-23
02-Feb-09
OT-23
DTC114ECA
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DTC114EUA
Abstract: No abstract text available
Text: DTC114EUA NPN DIGITAL TRANSISTOR 3 P b Lead Pb -Free 1 2 Features: SOT-323(SC-70) (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy.
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DTC114EUA
OT-323
SC-70)
02-Feb-09
OT-323
DTC114EUA
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K411
Abstract: LDTB113ELT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTB113ELT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTB113ELT1G
OT-23
K411
LDTB113ELT1G
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UMD3N
Abstract: Digital Transistor marking D3 DTC114E DTA114E
Text: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 6 Features .026TYP (0.65TYP) 5 4 * Transistor elements are independent, 1 eliminating interference. (3) (2) R1 3 2 .014(0.35) .006(0.15)
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OT-363
026TYP
65TYP)
021REF
DTA114E
DTC114E
OT-363
-200m
-500m
-50m-100m
UMD3N
Digital Transistor
marking D3
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LDTD113ZET1G
Abstract: SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD113ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTD113ZET1G
SC-89
100m200m
50m100m200m
463C-01
463C-02.
LDTD113ZET1G
SC-89
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A8A Transistor
Abstract: A8A Transistor sot23 transistor A8A sot 23 A8A SOT-23 A8A LDTC114ELT1G LDTC114ELT3G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC114ELT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC114ELT1G
OT-23
A8A Transistor
A8A Transistor sot23
transistor A8A
sot 23 A8A
SOT-23 A8A
LDTC114ELT1G
LDTC114ELT3G
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DTA143T
Abstract: DTC143T T108
Text: EMD6 / UMD6N / IMD6A Transistors General purpose dual digital transistors EMD6 / UMD6N / IMD6A zExternal dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD6 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA143T chip and DTC143T chip in an EMT
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DTA143T
DTC143T
T108
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DTB114ES
Abstract: B114E DTB114EK SC-72 T146
Text: DTB114EK / DTB114ES Transistors -500mA / -50V Digital transistors with built-in resistors DTB114EK / DTB114ES zExternal dimensions (Unit : mm) DTB114EK 2.9 1.1 0.4 1.6 2.8 (3) (2) (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 (1) GND (2) IN (3) OUT Each lead has same dimensions
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DTB114EK
DTB114ES
-500mA
DTB114EK
SC-59
15Min.
DTB114ES
B114E
SC-72
T146
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DTD143TK
Abstract: T146
Text: DTD143TK Transistors 500mA / 40V Digital transistors with built-in resistor DTD143TK zExternal dimensions (Unit : mm) 2.9 1.1 0.4 (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol: F03
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DTD143TK
500mA
SC-59
DTD143TK
T146
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Power Management dual transistors LUMF23NDW1T1G S-LUMF23NDW1T1G zApplication Power management circuit 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product
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LUMF23NDW1T1G
S-LUMF23NDW1T1G
AEC-Q101
SC-88
LUMF23NDW1T3G
S-LUMF23NDW1T3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual NPN Digital Transistor z Pb-Free Package is Available. LUMG3NT1G S-LUMG3NT1G Ordering Information Device LUMG3NT1G S-LUMG3NT1G LUMG3NT3G S-LUMG3NT3G Marking Shipping TR 3000/Tape&Reel TR 10000/Tape&Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C
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3000/Tape
10000/Tape
SC-88A
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTC114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with
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LDTC114EET1
SC-89
LDTC114EET1
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CHEMD2GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMD2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.
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OT-563)
OT-563
CHDTA124E
CHDTC124E
100OC
-40OC
50m100m
CHEMD2GP
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CHEMG9GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMG9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.
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OT553
OT-553)
CHDTC114E
100OC
-40OC
50m100m
CHEMG9GP
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CHEMH6GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMH6GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.
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OT-563)
OT-563
CHDTC144E
100OC
-40OC
50m100m
CHEMH6GP
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CHEMG6GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMG6GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.
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OT553
OT-553)
CHDTC144T
300uS;
100MHz
100OC
-40OC
50m100m
CHEMG6GP
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all mosfet equivalent book
Abstract: transistor equivalent book bc 149 mosfet catalogue 2SK2731 T146 free transistor equivalent book
Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F eatu re s 1 ) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E xte rn a l dimensions (Units: mm) 2.9±0.2
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200mA)
2SK2731
SC-59
all mosfet equivalent book
transistor equivalent book bc 149
mosfet catalogue
2SK2731
T146
free transistor equivalent book
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Untitled
Abstract: No abstract text available
Text: Transistors Digital Transistor Isolated Dual Digital Transistors UMH3N / IMH3A •E x te rn a l dim ensions (Units: mm) • F e a tu re s 1) T w o D T A K 13 T in U M T an d SM T IMH3A UMH3N packages. 2.0 ± 0.2 2) M o u n tin g p o s s ib le w ith UM T3 o r
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SC-88
100MHz
200ft
50m100m
D01720D
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Untitled
Abstract: No abstract text available
Text: Motor driver ICs PNP transistor array BA6254FS The BA6254FS has been developed as a low-saturation output, upper-side transistor array for iow-voltage m otor drive applications. The three PNP transistors have a common emitter. •A p p lic a tio n s Motor drivers
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BA6254FS
BA6254FS
150upply
-5m-10m
-50m-100m-200ni-500m
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