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    5 PIN TRANSISTOR 3 AMP Search Results

    5 PIN TRANSISTOR 3 AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5 PIN TRANSISTOR 3 AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5602

    Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA


    Original     		PDF 2SC5602 S21e2 2SC5602-T1 2SC5602 2SC5602-T1 nec 8725 marking TW NEC 2561

    nec 2501

    Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		PDF 2SC4703 2SC4703 OT-89) PU10339EJ01V1DS nec 2501 ic nec 2501 nec RF package SOT89 2501 NEC 2SC4703-T1 2SC470-3

    ic nec 2501

    Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		PDF 2SC4703 2SC4703 OT-89) PU10339EJ01V0DS ic nec 2501 nec 2501 2501 NEC 2SC4703-T1 2SC470-3 nec RF package SOT89

    2SC5603

    Abstract: marking TW
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


    Original     		PDF 2SC5603 S21e2 2SC5603-T1 2SC5603 marking TW

    2SC5369

    Abstract: MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION in mm • High f T 2.1±0.1 14 GHz TYP. 1.25±0.1 • High gain 0.2 –0 6 4 5 1 2 3 • 6-pin small mini mold package


    Original     		PDF 2SC5369 2SC5369 MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117

    nec 4814

    Abstract: 2SC5667 2SC5667-T1 744 771 20
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5667 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA


    Original     		PDF 2SC5667 2SC5667-T1 nec 4814 2SC5667 2SC5667-T1 744 771 20

    2SC5604

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


    Original     		PDF 2SC5604 S21e2 2SC5604-T3 2SC5604

    DIN 6784 c1

    Abstract: BCR108S BFS17S E6327 VPS05604
    Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363 DIN 6784 c1 BCR108S BFS17S E6327 VPS05604

    Untitled

    Abstract: No abstract text available
    Text: BFS17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363

    BFS17S

    Abstract: VPS05604 NPN marking MCs
    Text: BFS17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363 Aug-20-2001 BFS17S VPS05604 NPN marking MCs

    VPS05604

    Abstract: bfs 11
    Text: BFS 17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363


    Original     		PDF VPS05604 EHA07196 OT-363 Oct-25-1999 VPS05604 bfs 11

    ub 6351

    Abstract: nec 8339 2SC5668 nec 2565 904 2SC5668-T1 MARKING UB
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA


    Original     		PDF 2SC5668 2SC5668-T1 ub 6351 nec 8339 2SC5668 nec 2565 904 2SC5668-T1 MARKING UB

    BCP72M

    Abstract: SCT595
    Text: BCP72M PNP Silicon AF Power Transistor 4  Drain switch for RF power amplifier stages  For AF driver and output stages 5  High collector current  Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP72M PAs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595


    Original     		PDF BCP72M VPW05980 SCT595 Nov-29-2001 BCP72M SCT595

    2sc5704

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF NE662M16 2SC5704 NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A P15364EJ1V0DS 2sc5704

    a1270* transistor

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA892TD 2SC5668) 2SC5668 P15273EJ1V0DS a1270* transistor

    2SC5704-T3

    Abstract: 2SC5704 8822 TRANSISTOR NEC 2705
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF 2SC5704 2SC5704-T3 2SC5704-T3 2SC5704 8822 TRANSISTOR NEC 2705

    Untitled

    Abstract: No abstract text available
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3


    Original     		PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS)

    6c2 transistor

    Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
    Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor


    Original     		PDF OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors ^ 5 3 ^ 3 1 QDB5174 31A APX Preliminary specification b?E I> N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES BFR92AW PINNING PIN DESCRIPTION • High power gain • Gold metallization ensures excellent reliability


    OCR Scan     		PDF QDB5174 BFR92AW OT323 OT323 BFR92AW BFR92A. OT323.

    DARLINGTON 3A 100V npn array

    Abstract: c 623 D74A5D darlington 5v drive
    Text: D74A5D NPN POWER DARLINGTON TRANSISTOR ARRAY 100 VOLTS 5 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)


    OCR Scan     		PDF D74A5D D74OL DARLINGTON 3A 100V npn array c 623 D74A5D darlington 5v drive

    Untitled

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC 15E D |fl3bbDll 0002101 T | “F - 3 3 - J s* PRELIMINARY DATA SHEET 5 -8 -8 5 SFT1002 AND SFT1004 100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS CASE STYLE R T O —3 W ITH .0 é 0 PIN S 14830 Valley View Avenue La Mirada, California 90638


    OCR Scan     		PDF SFT1002 SFT1004 SFT1001 SFT1003

    Untitled

    Abstract: No abstract text available
    Text: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband


    OCR Scan     		PDF BFG195

    transistor TIP 320

    Abstract: 33T4 CSB744 CSD794 CSD794A
    Text: CSD794, CSD794A CSD794, 794A NPN PLASTIC POWER TRANSISTOR Complementary CSB744, 744A Audio frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM pT MIN. A 7 .4 7.8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2 .2 5 TYP. 0.49 | 0 .7 5 C 4 .5 TYP.


    OCR Scan     		PDF CSD794, CSD794A CSB744, transistor TIP 320 33T4 CSB744 CSD794 CSD794A

    Untitled

    Abstract: No abstract text available
    Text: CSC2611 NPN PLASTIC POWER TRANSISTOR High voltage Amplifier and TV Video Output PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2 .25 TYP. 0 .49 0.75 C 4 .5 TYP. L 15.7 TYP. M 1.27 TYP. N 3 .7 5 TYP.


    OCR Scan     		PDF CSC2611