Untitled
Abstract: No abstract text available
Text: BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Die Construction Complementary PNP Types Available BC857AT,BT,CT Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 4 and 5)
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BC847AT,
BC857AT
OT-523
DS30274
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Diode marking CODE 1M
Abstract: transistor marking 1f BC847AT BC847AT-7-F BC847BT BC847CT BC857AT
Text: BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Die Construction Complementary PNP Types Available BC857AT,BT,CT Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 4 and 5)
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BC847AT,
BC857AT
OT-523
DS30274
Diode marking CODE 1M
transistor marking 1f
BC847AT
BC847AT-7-F
BC847BT
BC847CT
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a2 2505-5
Abstract: 2N4416 HA-2505 HA-2515 HA3-2505-5 HP5082-2810 FN2890 pc 2505
Text: HA-2505 CT ODU ODU CT R P PR TE O LE U TE O B S U B S TI T 5 S -252 IBLEData HASheet O SS P 12MHz, High Input Impedance, Operational Amplifier May 2003 Features • Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V/µs HA-2505 is an operational amplifier whose design is
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HA-2505
12MHz,
HA-2505
330ns
a2 2505-5
2N4416
HA-2515
HA3-2505-5
HP5082-2810
FN2890
pc 2505
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ca555
Abstract: datasheet mc1555 MC1555 MC1555 datasheet ICM755 CA0555E LM555C CA555C LM555 HARRIS ICM7555
Text: CA555, CA555C, LM555C T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 5 S 5 5 E 7 L ICM SSIB Semiconductor December 1999 File Number 834.6 PO 1 • Accurate Timing From Microseconds Through Hours • Astable and Monostable Operation • Adjustable Duty Cycle
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CA555,
CA555C,
LM555C
ICM755
200mA
SE555,
NE555,
MC1555,
MC1455
-55oC
ca555
datasheet mc1555
MC1555
MC1555 datasheet
ICM755
CA0555E
LM555C
CA555C
LM555
HARRIS ICM7555
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2SD0601A
Abstract: 2SD601A XP01501 XP1501
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01501 (XP1501) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 5 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP01501
XP1501)
2SD0601A
2SD601A
XP01501
XP1501
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2SD0601A
Abstract: 2SD601A XP04501 XP4501
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04501 (XP4501) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP04501
XP4501)
2SD0601A
2SD601A
XP04501
XP4501
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UN2217
Abstract: UNR2217 XP04217 XP4217
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04217 (XP4217) Silicon NPN epitaxial planar type 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP04217
XP4217)
UN2217
UNR2217
XP04217
XP4217
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2SB0709A
Abstract: 2SB709A XP06401 XP6401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06401 (XP6401) Silicon PNP epitaxial planar type 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP06401
XP6401)
2SB0709A
2SB709A
XP06401
XP6401
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2SD1915F
Abstract: XP04506 XP4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP04506
XP4506)
2SD1915F
XP04506
XP4506
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2SD0601A
Abstract: 2SD601A XP06501 XP6501
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06501 (XP6501) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP06501
XP6501)
2SD0601A
2SD601A
XP06501
XP6501
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22K1-02
Abstract: 2SD0601A 2SD601A XP02501 XP2501
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP02501 (XP2501) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 5 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP02501
XP2501)
22K1-02
2SD0601A
2SD601A
XP02501
XP2501
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2SD0601A
Abstract: 2SD601A XP05501 XP5501
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05501 (XP5501) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP05501
XP5501)
2SD0601A
2SD601A
XP05501
XP5501
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2SD1915
Abstract: 2SD1915F XP04506 XP4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP04506
XP4506)
2SD1915
2SD1915F
XP04506
XP4506
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2SA1022
Abstract: XP06435 XP6435
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP06435
XP6435)
2SA1022
XP06435
XP6435
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tf5r21zz
Abstract: IT43 DIT21
Text: Dl-T Transistor Transform ers TYPICAL W E IG H T 1 / 1 5 O Z . Locating Line 1 Type No. M IL Type D I-T44 TF5R 21ZZ Pri. Im p. f i 8 0 CT m a D .C .f in Pri. 12 1 0 0 CT 10 SO U R C E LO A D Sec. Im p . f i 3 2 s p lit 1 5 0 CT 14 500 C o u p lin g 600 20
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I-T44
I-T56
I-T19
I-T43
tf5r21zz
IT43
DIT21
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200 ampere MOSFET
Abstract: 200 Ampere power transistor diode 5 ampere FS10UM-5 transistor 5 100V, 200 A MOSFET igbt 600V 450v mosfet mosfet fs series transistor FS 10 SM
Text: mNEREX Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 MOS Numbering System DiSCtOtC IGBT Example: CT 75 AM - 12 (6 ) (3) (4) (5) CT75AM-12 is a 75 Ampere, 600V, Lead Mount, Insulated Gate Bipolar Transistor (5) Drive Voltage
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CT75AM-12
FS10UM-5
O-220AB,
O-220AB
O-220FN
O-220S
200 ampere MOSFET
200 Ampere power transistor
diode 5 ampere
transistor 5
100V, 200 A MOSFET
igbt 600V
450v mosfet
mosfet fs series
transistor FS 10 SM
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2N3053
Abstract: No abstract text available
Text: T -3 3 -0 5 P ow er Transistors 2N3053, 2N3053A HARRI S S E M I C O N D SE CT OR File Number 27E D M3D2S71 0 0 1 ^ 5 960 5 «H AS General-Purpose, Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal A pplications Features:
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2N3053,
2N3053A
M3D2S71
O-205AD
2N3053
2N3053A
TQ-205AD
2N3053J29R4
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T he 2 S K 3 3 5 5 is N -ch an nel M O S Field E ffe ct T ra n sisto r PART NUMBER PACKAGE
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2SK3355
-220AB
2SK3355-S
O-262
2SK3355-Z
O-22QSMD
O-22QAB
MP-25)
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em 483
Abstract: d2504
Text: Elt HERMETIC PAIR OP T OE L E CT RONI CS QPAI223 PACKAGE DIMENSIONS .230 5.48 _j .209 (5.31) . .188 (4.78) 180(4.57) .189(4.80) '.1 7 9 (4 .5 5 ) r .070(V78) .055(1.39) .215(5.46) .5 0 5 (5 .2 1 )' r .205 (5.21) .190 4.83) 255 (6.48) MAX _L 030(0 76) T MAX
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QPAI223
ST2137
QPA1223
QPA1223
em 483
d2504
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WT5703
Abstract: WT5705 westinghouse capacitor westcode Inverter Diode hawk* 500v Westinghouse diode westinghouse transistors WT5706 westinghouse 300a Westcode Semiconductors
Text: WESTCODE S E M I C ON DU CT OR S 41 DE 1 ^ 7 0 ^ 5 5 OODlöOa 7 T - f WESTCODE ® SEMICONDUCTORS - . Technical Publication WT5703/06 Issue 1 February 1981 High Power Transistor Types WT5703 to WT5706 • 150kW Switched Power • 300 Amperes Continuous • 500 Volts Sustaining Voltage
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WT5703/06
WT5703
WT5706
150kW
450nt
WT5705
westinghouse capacitor
westcode Inverter Diode
hawk* 500v
Westinghouse diode
westinghouse transistors
WT5706
westinghouse 300a
Westcode Semiconductors
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702 Z TRANSISTOR
Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701
Text: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
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PDF
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MJE700/701/702/703
MJE800/801/802/803
MJE700/701
MJE702/703
O-126
702 Z TRANSISTOR
702 TRANSISTOR npn
702 TRANSISTOR
S6020
TL MJE2955T
702 pnp
TRANSISTOR S 802
4A complementary transistor
TRansistor 701
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transistor 356 j
Abstract: MARKING W2 SOT23 TRANSISTOR
Text: SAMS UN G SE MIC ONDU CT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR —— — — ;-: [T~<2q~ i<v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ‘ i Characteristic | Collector-Base Voltage
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MMBC1622D7
OT-23
MMBC1622D6
100mA,
transistor 356 j
MARKING W2 SOT23 TRANSISTOR
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BF184
Abstract: Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor
Text: filC D TELEFUNKEN E LE CT RONI C TTliUiiFyKlKllNl electronic • ÔTSOGTb OQDSlbô fi 7 = 3 /-/5 - BF184 ' CreativeTechnologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and controlled RF amplifier stages upt to 100 MHz Features: • Noise figure 3.S dB
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BF184
569-GS
BF184
Bf184 transistor
transistor bc 7-40
TELEFUNKEN e
transistor marking ra
BF 145 transistor
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YTF540
Abstract: 16845 ip27a 316a2 In15A
Text: TOSHIBA {DISCRETE/OPTO} D e | TOTVSSD 9097250 TOSHIBA ÍDISCRETE/OPTO 99 D 16844 T - 2 ? -/3 □Dlbfl44 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA CT-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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T0T7E50
Dlbfl44
500nA
250uA
250uA
00A/us
YTF540
16845
ip27a
316a2
In15A
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