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    4N06L26

    Abstract: IPG20N06S4L-26
    Text: IPG20N06S4L-26 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max4) 26 mW ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S4L-26 4N06L26 4N06L26 IPG20N06S4L-26 PDF

    4N06L26

    Abstract: No abstract text available
    Text: IPG20N06S4L-26A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS on ,max4) 26 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S4L-26A PG-TDSON-8-10 4N06L26 4N06L26 PDF