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    4N06L Price and Stock

    onsemi NTD24N06LT4G

    MOSFET N-CH 60V 24A DPAK
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    DigiKey NTD24N06LT4G Cut Tape 10,859 1
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    NTD24N06LT4G Digi-Reel 10,859 1
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    NTD24N06LT4G Reel 10,000 2,500
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    Mouser Electronics NTD24N06LT4G 13,006
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    TME NTD24N06LT4G 1
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    New Advantage Corporation NTD24N06LT4G 30,000 1
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    Infineon Technologies AG BSC094N06LS5ATMA1

    MOSFET N-CHANNEL 60V 47A 8TDSON
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    DigiKey BSC094N06LS5ATMA1 Cut Tape 9,310 1
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    BSC094N06LS5ATMA1 Digi-Reel 9,310 1
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    • 1000 $0.53404
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    BSC094N06LS5ATMA1 Reel 5,000 5,000
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    Avnet Americas BSC094N06LS5ATMA1 Ammo Pack 19 Weeks, 1 Days 1
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    BSC094N06LS5ATMA1 Reel 18 Weeks 5,000
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    Mouser Electronics BSC094N06LS5ATMA1 17,255
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    Infineon Technologies AG ISZ034N06LM5ATMA1

    MOSFET N-CH 60V 19A/112A TSDSON
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    DigiKey ISZ034N06LM5ATMA1 Digi-Reel 5,677 1
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    ISZ034N06LM5ATMA1 Cut Tape 5,677 1
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    ISZ034N06LM5ATMA1 Reel 5,000 5,000
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    Avnet Americas ISZ034N06LM5ATMA1 Reel 18 Weeks 5,000
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    Mouser Electronics ISZ034N06LM5ATMA1 6,284
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    EBV Elektronik ISZ034N06LM5ATMA1 19 Weeks 5,000
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    New Advantage Corporation ISZ034N06LM5ATMA1 385 1
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    • 100 $1.26
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    UMW NTD24N06LT4G

    MOSFET N-CH 60V 24A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTD24N06LT4G Cut Tape 2,500 1
    • 1 $0.66
    • 10 $0.44
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    NTD24N06LT4G Digi-Reel 2,500 1
    • 1 $0.66
    • 10 $0.44
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    Rochester Electronics LLC RFD4N06L

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD4N06L Bulk 987
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    Find more 4N06L price and stock on Findchips.com

    4N06L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4N06L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4N06L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4N06LSM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4N06LSM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    4N06L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4N06L30

    Abstract: IPD25N06S4L-30 4N06L
    Text: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD25N06S4L-30 PG-TO252-3-11 PG-TO252-3-11 4N06L30 726-IPD25N06S4L-30 4N06L30 IPD25N06S4L-30 4N06L PDF

    4N06L08

    Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
    Text: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L08 IPI45N06S4L-08 4N06L08 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140 PDF

    4N06L07

    Abstract: smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809
    Text: IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 6.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L07 IPI80N06S4L-07 4N06L07 smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809 PDF

    4N06L26

    Abstract: IPG20N06S4L-26
    Text: IPG20N06S4L-26 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max4) 26 mW ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S4L-26 4N06L26 4N06L26 IPG20N06S4L-26 PDF

    4N06

    Abstract: 4N06L PG-TO252-3 infineon reflow 4N06L06
    Text: IPD90N06S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 6.3 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD90N06S4L-06 PG-TO252-3-11 PG-TO252-3-11 4N06L06 726-IPD90N06S4L-06 4N06 4N06L PG-TO252-3 infineon reflow 4N06L06 PDF

    PG-TDSON-8-4

    Abstract: ma6580
    Text: IPG20N06S4L-14 OptiMOS -T2 Power-Transistor Product Summary V DS 60 R DS on ,max4) 13.7 ID 20 V mW A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S4L-14 4N06L14 PG-TDSON-8-4 ma6580 PDF

    4N06L05

    Abstract: DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode
    Text: IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L05 IPI80N06S4L-05 4N06L05 DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode PDF

    4N06L05

    Abstract: C3206 marking 113a IPD90N06S4L-05 PG-TO252-3-11 4N06L
    Text: IPD90N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 4.6 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD90N06S4L-05 PG-TO252-3-11 4N06L05 4N06L05 C3206 marking 113a IPD90N06S4L-05 PG-TO252-3-11 4N06L PDF

    IPG20N06S4L-11

    Abstract: IPG20N06S4L 4N06L11
    Text: IPG20N06S4L-11 OptiMOS -T2 Power-Transistor Product Summary V DS 60 R DS on ,max4) 11.2 ID 20 V mW A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S4L-11 4N06L11 IPG20N06S4L-11 IPG20N06S4L 4N06L11 PDF

    n channel to252 30v 45A

    Abstract: IPD90N06S4L-06 PG-TO252-3-11 C3209
    Text: IPD90N06S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 6.3 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD90N06S4L-06 PG-TO252-3-11 4N06L06 n channel to252 30v 45A IPD90N06S4L-06 PG-TO252-3-11 C3209 PDF

    4N06L30

    Abstract: IPD25N06S4L-30 PG-TO252-3-11
    Text: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD25N06S4L-30 PG-TO252-3-11 4N06L30 4N06L30 IPD25N06S4L-30 PG-TO252-3-11 PDF

    PG-TO252-3-11

    Abstract: IPD50N06S4L-08
    Text: IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 7.8 mΩ ID 50 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD50N06S4L-08 PG-TO252-3-11 4N06L08 PG-TO252-3-11 IPD50N06S4L-08 PDF

    4N06L23

    Abstract: 4N06 IPD30N06S4L-23 PG-TO252-3-11
    Text: IPD30N06S4L-23 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 23 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD30N06S4L-23 PG-TO252-3-11 4N06L23 4N06L23 4N06 IPD30N06S4L-23 PG-TO252-3-11 PDF

    4N06L12

    Abstract: IPD50N06S4L-12 IPD50N06S4L-12 datasheet PG-TO252-3-11
    Text: IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 12 mΩ ID 50 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD50N06S4L-12 PG-TO252-3-11 4N06L12 4N06L12 IPD50N06S4L-12 IPD50N06S4L-12 datasheet PG-TO252-3-11 PDF

    4N06

    Abstract: IPD90N06S4L-03 PG-TO252-3-11 f90a 4N06L03 C2804
    Text: IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 3.5 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD90N06S4L-03 PG-TO252-3-11 4N06L03 4N06 IPD90N06S4L-03 PG-TO252-3-11 f90a 4N06L03 C2804 PDF

    4N06L26

    Abstract: No abstract text available
    Text: IPG20N06S4L-26A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS on ,max4) 26 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S4L-26A PG-TDSON-8-10 4N06L26 4N06L26 PDF