4N SOT23 Search Results

4N SOT23 Result Highlights (5)

Part	Manufacturer	Description
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
ISL54103IHZ-T7A	Renesas Electronics Corporation	DDC Accelerator (DDCA), SOT23, /Reel
EL6204CWZ-T7A	Renesas Electronics Corporation	Laser Driver Oscillator, SOT23, /Reel
ISL54103IHZ-T7	Renesas Electronics Corporation	DDC Accelerator (DDCA), SOT23, /Reel
ISL21070CIH320Z-TK	Renesas Electronics Corporation	25µA Micropower Voltage References, SOT23, /Reel

4N SOT23 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet cross reference Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is	Original	PDF	T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
4139 temperature Abstract: RN5RF RN5RF30A RN5RF50A 75W PNP Text: /2:#5,33/ #92/7$( 5(8/$725#:,7+#(;7(51$/ 75$16,6725 5185 #6(5,(6 $33/,&$7,21#0$18$/ NO. EA-043-0006 LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR 5185)#6(5,(6 OUTLINE /	Original	PDF	EA-043-0006 RN5RF30A 4139 temperature RN5RF RN5RF30A RN5RF50A 75W PNP
npd5564 Abstract: 2N4393 MOTOROLA 2sk194 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71 Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g,. VGS(Off) Min (S) Max Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 2SK364 2SK366 2SK240 2SK431 2SK170 UC704	Original	PDF	2SK364 2SK366 2SK240 2SK431 2SK170 UC704 2SK194 ITE4091 ITE4091A npd5564 2N4393 MOTOROLA 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71
R1112N Abstract: 0737R 1433u Text: /2:#12,6 #483P$#/'2 5(*8/$725 544451#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-059-0006 LOW NOISE 150mA LDO REGULATOR 544451#6(5,(6 OUTLINE	Original	PDF	EA-059-0006 150mA 210UHVLVWDQFH/ R1112N R11X2N301B R1112N 0737R 1433u
4435 mosfet Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310 Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展	Original	PDF	APM70N03 APM3005/7/9N APM2509/6/4N MO-23/25/26/89, SC-70 0V/20V, 30mohm /55mohm~ APM2300A/2322/2324, APM2310/2320/2306, 4435 mosfet APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
PMV45EN Abstract: No abstract text available Text: Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PDF	PMV45EN PMV45EN
R1111N Abstract: R1111N181B r1111nxx1a Text: /2:#12,6 #483P$#/'2 5(*8/$725 544441#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-057-0006 LOW NOISE 150mA LDO REGULATOR 544441#6(5,(6 OUTLINE	Original	PDF	EA-057-0006 150mA 210UHVLVWDQFH/ RXWSXW111N301B R1111N R1111NXX1A R1111Nxx1B R1111N R1111N181B
Untitled Abstract: No abstract text available Text: DB3X313N Silicon epitaxial planar type For small current rectiﬁcation Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant	Original	PDF	DB3X313N UL-94 DB2J313 DB3X313N0L SC-59A O-236AA/SOT-23
buz350 mosfet Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20 Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34	Original	PDF	2100p 1800p IAFJ240 BUZ37 BUZ31 BUZ34 IXTL15N20 MTH15N20 MTM15N20 buz350 mosfet DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
74STX1G126 Abstract: PI74STX1G00 74STX1G08 p241p PI74STX1GT08 TP04 S1G5-ENG-U01 0.5um thermostream p227p Text: 3545 North First Street • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-05 Means of Distinguishing Changed Devices: Date Issued: March 5, 2004 Product Mark: Product(s) Affected: Back Mark PI74STX1G00, 74STX1G02, 74STX1G04, 74STX1G08,	Original	PDF	PI74STX1G00, 74STX1G02, 74STX1G04, 74STX1G08, 74STX1G14, 74STX1G32, 74STX1G79, 74STX1G86, 74STX1G125, 74STX1G126; 74STX1G126 PI74STX1G00 74STX1G08 p241p PI74STX1GT08 TP04 S1G5-ENG-U01 0.5um thermostream p227p
Untitled Abstract: No abstract text available Text: /2:#12,6 #483P$#/'2 5(*8/$725 544541#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-058-0006 LOW NOISE 150mA LDO REGULATOR 544541#6(5,(6 OUTLINE	Original	PDF	EA-058-0006 150mA 210UHVLVWDQFH# R1121N301B R1121N R1121NXX1A R1121Nxx1B
PMV45EN Abstract: No abstract text available Text: SO T2 3 PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PDF	PMV45EN PMV45EN
PMV45EN Abstract: FET marking codes pmv45en Power and Industrial Semiconductors 03AK Text: SO T2 3 PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PDF	PMV45EN 771-PMV45EN-T/R PMV45EN FET marking codes pmv45en Power and Industrial Semiconductors 03AK
VIM-878-DP Abstract: SML-LX0805SUGC-TR 14-segment display map Vp33 MAXQ2010 RST SM 0805 1K FT232 ftdi Text: 19-5048; Rev 2; 6/11 MAXQ2010 Evaluation Kit Features ♦ Easily Load Code and Debug Using On-Board USB Interface The MAXQ2010 evaluation kit EV kit is a proven platform to conveniently evaluate the capabilities of the MAXQ2010 ADC microcontroller. The kit contains the	Original	PDF	MAXQ2010 MAXQ2010. MAXQ2010 VIM-878-DP SML-LX0805SUGC-TR 14-segment display map Vp33 RST SM 0805 1K FT232 ftdi

VIM-878-DP Abstract: fb0805 PDV-P8013 EVQ-Q5A05K ft232 h maxim 16-bit mixed-signal microcontroller with lcd interface FT232RL NCP21WB473J03RA pec02saan YAGEO sm capacitor 22pF Text: 19-5048; Rev 1; 11/09 MAXQ2010 Evaluation Kit Features ♦ Easily Load Code and Debug Using On-Board USB Interface The MAXQ2010 evaluation kit EV kit is a proven platform to conveniently evaluate the capabilities of the MAXQ2010 ADC microcontroller. The kit contains the	Original	PDF	MAXQ2010 MAXQ2010. MAXQ2010 VIM-878-DP fb0805 PDV-P8013 EVQ-Q5A05K ft232 h maxim 16-bit mixed-signal microcontroller with lcd interface FT232RL NCP21WB473J03RA pec02saan YAGEO sm capacitor 22pF
pj 89 diode Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89 Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele	OCR Scan	PDF	O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
pj 89 diode Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct	OCR Scan	PDF	OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
4N SOT23 Abstract: S269-BO Text: LS S269-BO YELLOW LY S269-BO GREEN LG S269-BO SIEMENS SUPER-RED SOT23 Low Current Surface Mount LED Lamp P a cka ge D im e n sio n s in Inches m m • 00fi( 15) 0 0 4 ( 09) .117 (fi 0) $ r \| 10') {? H) p hb\| 2" 30" \|c! T ill 1^1 !. '1 M ax. 10 “ M ax	OCR Scan	PDF	S269-BO S269-BO 1111Mux 4N SOT23
series 4N Abstract: TO39 package japanese transistor series Text: BSÛ74DD DDDDDOS T • ~ p ~ 2 7 " O / FINE PRODUCTS rx ransistor: Chips and Packaged Products Reliable Source on Small Signal Transistor • General Purpose Am plifiers • P N P Sw itches and Drives • N P N R F Devices • Darlington W V T7=T Hem S.\|	OCR Scan	PDF	OT-89 OT-23 9000-Series series 4N TO39 package japanese transistor series
MMBZ 52368 Abstract: 5251B 8A SF sc 10 MARK 8E diode DIODE BZ mark 8m sot-23 ml25 5234B 5235B MMBZ5226B Text: . , Discrete POWER & Signal Technologies Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation	OCR Scan	PDF	MMBZ5226B MMBZ5257B OT-23 5245B 5246B 5247B 5248B 5249B 5250B 5251B MMBZ 52368 8A SF sc 10 MARK 8E diode DIODE BZ mark 8m sot-23 ml25 5234B 5235B
BGY91A Abstract: RF BeO Text: Philips Components D E V E LO P M E N T DATA BGY91A T his data s h e e t c o n ta in s advance in fo rm a tio n and s p e c ific a tio n s w h ic h are su b je c t to change w ith o u t n o tic e . UHF POWER AMPLIFIER MODULE A U H F a m p lifie r m odule p rim a rily designed fo r m o bile com m unica tions equipm ent, operating d ire c tly	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: _ MIC7300_ High-Output Drive Rail-to-Rail Op Amp Preliminary Information General Description Features The MIC7300 is a high-performance CMOS operational amplifier featuring rail-to-rail input and output with strong output drive capability. It is able to source and sink in excess	OCR Scan	PDF	MIC7300_ MIC7300 300mV, 500kHz OT-23-5 high20) MIC7300
lm7211 Abstract: TL 424 TRANSISTOR 100-C LM60 LM60BIM3 LM60BIM3X LM60CIM3 LM60CIM3X MA03B t6c marking sot23 Text: b 5011B 4 0 1 0 1 5 0 0 7 T & " _ Semiconductor LM60B/LM60C 2.7V, SOT-23 Temperature Sensor General Description The LM60 is a precision integrated-circuit temperature sen sor that can sense a -4 0 ° C to + 125“C temperature range while operating from a single + 2.7V supply. The LM60's	OCR Scan	PDF	bS011E4 LM60B/LM60C OT-23 lm7211 TL 424 TRANSISTOR 100-C LM60 LM60BIM3 LM60BIM3X LM60CIM3 LM60CIM3X MA03B t6c marking sot23
8056n Abstract: No abstract text available Text: ANALOG ► D E V IC E S FEATURES Low Cost Single AD8055 and Dual (AD8056) Easy to Use V oltage Feedback Architecture High Speed 300 MHz, -3 dB Bandwidth (G = +1) 1400 V / \| jls Slew Rate 20 ns S ettling to 0.1% Low Distortion: -7 2 dBc @ 10 MHz Low Noise: 6 nV/VTTz	OCR Scan	PDF	AD8055) AD8056) AD8055 OT-23-5 AD8056 8056n

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4N SOT23 Search Results

4N SOT23 Result Highlights (5)

4N SOT23 Datasheets Context Search

mosfet cross reference

4139 temperature

npd5564

R1112N

4435 mosfet

PMV45EN

R1111N

Untitled

buz350 mosfet

74STX1G126

Untitled

PMV45EN

PMV45EN

VIM-878-DP

VIM-878-DP

pj 89 diode

pj 89 diode

4N SOT23

series 4N

MMBZ 52368

BGY91A

Untitled

lm7211

8056n