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Nexperia BZX384-B75-QF BZX384-B75-Q/SOD323/SOD2
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DigiKey	BZX384-B75-QF	Cut Tape	7,653		1	1 $0.21 10 $0.128 100 $0.21 1000 $0.05094 10000 $0.03872	Buy Now
	BZX384-B75-QF	Digi-Reel	7,653		1	1 $0.21 10 $0.128 100 $0.21 1000 $0.05094 10000 $0.03872	Buy Now
	BZX384-B75-QF	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.03021	Buy Now
Avnet Americas	BZX384-B75-QF	Reel		6 Weeks	40,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	BZX384-B75-QF					1 $0.22 10 $0.146 100 $0.065 1000 $0.039 10000 $0.018	Get Quote
TTI	BZX384-B75-QF	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia BZB84-B75-QR BZB84-B75-Q/SOT23/TO-236AB
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DigiKey	BZB84-B75-QR	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.03097	Buy Now
Avnet Americas	BZB84-B75-QR	Reel			30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	BZB84-B75-QR					1 $0.26 10 $0.181 100 $0.088 1000 $0.051 10000 $0.044	Get Quote
Nexperia BZX84-B75-QR BZX84-B75-Q/SOT23/TO-236AB
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DigiKey	BZX84-B75-QR	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.03249	Buy Now
Avnet Americas	BZX84-B75-QR	Reel		6 Weeks	45,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	BZX84-B75-QR		1,740			1 $0.19 10 $0.13 100 $0.071 1000 $0.039 10000 $0.025	Buy Now
TTI	BZX84-B75-QR	Reel			30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	BZX84-B75-QR			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	BZX84-B75-QR			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia BZX384-B75-QX BZX384-B75-Q/SOD323/SOD2
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DigiKey	BZX384-B75-QX	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.03671	Buy Now
Avnet Americas	BZX384-B75-QX	Reel		6 Weeks	39,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	BZX384-B75-QX					1 $0.2 10 $0.137 100 $0.067 1000 $0.039 10000 $0.025	Get Quote
TTI	BZX384-B75-QX	Reel			21,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	BZX384-B75-QX				1	1 $0.1717 10 $0.1717 100 $0.0601 1000 $0.0309 10000 $0.0249	Get Quote

Avnet Asia	BZX384-B75-QX			6 Weeks	39,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	BZX384-B75-QX		9,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	BZX384-B75-QX		39,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia BZX884-B75-QYL BZX884-B75-Q/SOD882/DFN1006-2 - Tape and Reel (Alt: BZX884-B75-QYL)
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Avnet Americas	BZX884-B75-QYL	Reel			30,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	BZX884-B75-QYL					1 $0.23 10 $0.139 100 $0.086 1000 $0.056 10000 $0.034	Get Quote

4B75Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.	OCR Scan	PDF	HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.
Untitled Abstract: No abstract text available Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR
Untitled Abstract: No abstract text available Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ
Untitled Abstract: No abstract text available Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT
5117404 Abstract: No abstract text available Text: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	117404A HY5117404A HY5117404A 1A038-10-MAY95 DD45DD HY5117404AJ HY5117404ASLJ HY51174CMAT 5117404
Untitled Abstract: No abstract text available Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.	OCR Scan	PDF	32100A 32-blt HYM532100A 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG compatible004M 750M6 004t1
Untitled Abstract: No abstract text available Text: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	V17410Ais HY51V17410A HY51V1741 D36-00-MAY94 4b75Q HY51V17410A HY51V17410AJ HY51V17410ASLJ HY51V17410AT HY51V1741OASLT
Untitled Abstract: No abstract text available Text: HY51V17400A Series •HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V17400A HY51V17400A 1AD35-00-MAY95 HY51V17400AJ HY51V17400ASLJ HY51V17400AT HY51V17400ASLT
Untitled Abstract: No abstract text available Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques	OCR Scan	PDF	HY51V16100B 4b750flÃ 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU
A1HV Abstract: OQ11 SLTC Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260	OCR Scan	PDF	16-bit HY5118260 16-bit. 1A016-10-MAY94 GDD3543 HY5118260JC HY5118260SLJC A1HV OQ11 SLTC
Untitled Abstract: No abstract text available Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V16400B HY51V16400B 1A047-00-MAY95 HY51V16400BJ HY51V16400BSL HY51V16400BT HY51V16400BSLT
L0820 Abstract: paa15 1DG02-22-M Text: <MY II N fi A I HY638100AS/HY6381OOAL 128 X 8 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a 1,048,576 -bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The HY638100 uses eight common input and output liness and has an output enable pin which operates	OCR Scan	PDF	HY638100AS/HY6381OOAL HY638100 15/17/20/25ns HY638100AS 150mA HY638100AL 8730p 1DG02-22-MAY95 L0820 paa15 1DG02-22-M
721 KXC Abstract: moc 3048 Text: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that	OCR Scan	PDF	HY62V8100A 128Kx 55/70/85/100ns -100/120/150/200ns t00-H 792e0 1DD04-11-MAY95 721 KXC moc 3048
Untitled Abstract: No abstract text available Text: •HYUNDAI HYCFL001 Series 1MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL001 is the Flash memory card consisting of two 5V-only 4Mbit 512Kx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized for the application of data and file storage in the	OCR Scan	PDF	HYCFL001 x8/x16 512Kx8) 01-MAR96 4b750flfl DDD315S 1FC08-01-MAR96

Untitled Abstract: No abstract text available Text: • H Y UN D A I HYM5V72A414A F-Series Unbuffered 4M x 72-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting o f eighteen HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPFtOM on a 168 pin glass-epoxy printed circuit b o a rd . 0.1 ^F and 0.01 nF	OCR Scan	PDF	HYM5V72A414A 72-bit HY51V17804B HYM5V72A414AFG/ATFG/ASLFG/ASLTFG SpeeC07-10-JAN96 1EC07-10-JANM
Untitled Abstract: No abstract text available Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	PDF	HY62256A speed-55/70/85/100ns 1DC01-11-MAY94 HY62256AP HY62256ALP HY62256ALLP
HY5117804 Abstract: No abstract text available Text: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HVM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51V17804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .luF and 0.01 mF	OCR Scan	PDF	HYM5V64414A 64-bit HVM5V64414A HY51V17804B HYM5V64414AFG/ATFG/ASLFGASLTFG CA50-CAS7) DQ0-DQ63) 4b750flfl 1EC07-10-JAN96 HY5117804
Untitled Abstract: No abstract text available Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V16100A HY51V16100A V16100Ato 1AD21-0O-MAY94 HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V161OOASLT HY51V16100AR
Untitled Abstract: No abstract text available Text: HYUNDAI HYM591610 M-Series 16M X 9-bit C M O S DRAM MODULE DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMO S DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for	OCR Scan	PDF	HYM591610 HY5117100 22//F HYM59161OM/LM/TM/LTM 03IMIN. HYM591610TM/LTM 781MIN. 031MIN. 1BD04-11-MAR94
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR HYM532512 Series 512K X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532512 is a 512K x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM532512 32-bit HY534256 22/iF HYM532512M HYM532512MG 1CB01-10-MAY93
Untitled Abstract: No abstract text available Text: • H Y U N D A I H Y 5 1 V 4 8 0 0 B S e r ie s 5 1 2 K x 8 - b it C M O S D R A M PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V4800B HY51V4800B 1AC18-00-MA HY51V4800BJC HY51V4800BSUC HY51V4800BTC HY51V4800BLTC
Untitled Abstract: No abstract text available Text: «HYUNDAI HYM5V72A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.22nFdecoupiing	OCR Scan	PDF	HYM5V72A414A 72-bit HY51V17404A 22nFdecoupiing HYM5V72A414AKG/ATKG/ASLKG/ASLTKG 010TO nn47H 4b75Gfifl
Untitled Abstract: No abstract text available Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling	OCR Scan	PDF	HYM536100A 36-bH 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG DQ0-DQ35)
Untitled Abstract: No abstract text available Text: “HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 j.F	OCR Scan	PDF	HYM5V64124A 64-bit HY51V18164B HYM5V64124ARG/ATRG/ASLRG/ASLTRG DQ0-DQ63) 62K1S 0157MOO)

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4B75Q Datasheets Context Search

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5117404

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721 KXC

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HY5117804

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