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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB
Untitled Abstract: No abstract text available Text: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY5116400 1AD02-10-MAV94 4b750fifi HY5116400JC HY5116400UC
hy51v18164b Abstract: No abstract text available Text: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit	OCR Scan	PDF	HYM5V64124A 64-bit HYM5V64124Ais HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 1CE16-10-APR96 HYM5V64124AQG HYM5V64124ASLQG
Untitled Abstract: No abstract text available Text: •HYUNDAI HY53C256 Series SEMICONDUCTOR 256K X 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynam ic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.	OCR Scan	PDF	HY53C256 300mil 330mil 01-20-APR93 4b75DBB 0DD131S