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Cal-Chip Electronics RN04B7500CT10-25 THINRES 0604 .1% 750 OHM 25PPM
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DigiKey	RN04B7500CT10-25	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.0339	Buy Now
NIC Components Corp NTRT04B7500BTRQYF Tantalum Nitride High Precision Thin Film Chip Resistor - Tape and Reel (Alt: NTRT04B7500BTRQYF)
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Avnet Americas	NTRT04B7500BTRQYF	Reel		16 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.2296	Buy Now
NIC Components Corp NTR04B7500STRF RES THNFLM 0402 750 OHM 1/16W 25V 0.1% 5PPM SMD - Tape and Reel (Alt: NTR04B7500STRF)
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Avnet Americas	NTR04B7500STRF	Reel		16 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.266	Buy Now
NIC Components Corp NTR04B7500NTRF Res Thin Film 0402 750 Ohm 0.1% 1/16W ?15ppm/?C Molded SMD SMD Paper T/R - Tape and Reel (Alt: NTR04B7500NTRF)
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Avnet Americas	NTR04B7500NTRF	Reel		16 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.154	Buy Now
NIC Components Corp NTR04B7500DTRF Res Thin Film 0402 750 Ohm 0.1% 1/16W ?50ppm/?C Molded SMD SMD Paper T/R - Tape and Reel (Alt: NTR04B7500DTRF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NTR04B7500DTRF	Reel		16 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.0392	Buy Now

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4B7500 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HY62C64 Abstract: 8192X8BIT Text: H Y U N D A I E L E C T R O N I C S 03 D E \| 4b7500â Q000117 M T-46-23-12 PRELIMINARY N f SEMICONDUCTOR NOVEM BER 1986 DESCRIPTION FEATURES The HYUNDAI HY62C64 is a 65, 536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5 volt supply It is built	OCR Scan	PDF	Q000117 T-46-23-12 HY62C64 536-bit 28-pin, HY62C64/L-45 HY62C64/L-55 HY62C64/L-70 HY62C64/L 8192X8BIT
Untitled Abstract: No abstract text available Text: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	PDF	HY62256B-I 1DC05-11-MAY94 HY62256BLP-I HY62256BLLP-I HY62256BU-I HY62256BLU-I
Untitled Abstract: No abstract text available Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in	OCR Scan	PDF	HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl
Untitled Abstract: No abstract text available Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs	OCR Scan	PDF	16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96
Untitled Abstract: No abstract text available Text: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY5116160 16-bit 16-bit. HY5116160 1AD11-10-MAY94 HY5116160JC HY5116160SLJC
Untitled Abstract: No abstract text available Text: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words	OCR Scan	PDF	HY57V16161 476x16 4b75Gflfi 1SD03-00-MAY95 400mil 4b750flÃ
Untitled Abstract: No abstract text available Text: mH Y II N U It I A 1 V I I U I I B I 4 M x 1 6 b it S y n c h r o n o u s D R A M S e r ie s HY57V641610/ HY57V641620/ HY57V651610/ HY57V651620 HY57V641611/ HY57V641621/ HY57V651611/ HY57V651621 PRELIMINARY DESCRIPTION HY57V641610 2Mbit X 2bank x 16 I/O, LVTTL	OCR Scan	PDF	HY57V641610/ HY57V641620/ HY57V651610/ HY57V651620 HY57V641611/ HY57V641621/ HY57V651611/ HY57V651621 HY57V641610 HY57V641620
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 5 1 1 6 2 6 0 S e r ie s IM X 16-bit CMOS DRAM with 2CAS &WPB DESCRIPTION The HY5116260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116260 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	16-bit HY5116260 16-bit. HY5116260 470/H 1AD12-10-MAY94 4b750Ã HY5116260JC
HY524400 Abstract: No abstract text available Text: HY524400 Series »HYUNDAI 1 M x 4-bit CMOS DRAM DESCRIPTION The HY524400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY524400 utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins	OCR Scan	PDF	HY524400 1AC04-10-MAY94 HY524400J
Untitled Abstract: No abstract text available Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V17400A HY51V17400A 1AD35-00-MA 4b750flÃ HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR H Y 5116410 S e rie s 4M X 4-blt CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced	OCR Scan	PDF	HY5116410 1AD03-10-APR93 4b7500fl HY5116410JC HY5116410UC HY5116410TC HY5116410LTC
Untitled Abstract: No abstract text available Text: H Y 5 1 1 8 1 6 0 B • « H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	16-bit HY5118160B 16-bit. HY5118160B 1ADS4-104IIAY9S HY5118160BJC HY5118160BSLJC HY5118160BTC
Untitled Abstract: No abstract text available Text: “HYUNDAI H Y M 5 3 2 4 1 0 M - S e r ie s 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2?«F decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	32-bit HYM532410 HY5117400 HYM53241OM/LM HYM532410MG/LMG TTLW-I1-C033I. 03-11-M Q0G34T3
Untitled Abstract: No abstract text available Text: • H Y U N D A I H Y M 5V 64214A Z -S e r ie s SO DIMM 2M X 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION Ttie HYM5V64214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V178046 in 28/28 pin SOJ or TSOR-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit board. 0.22pF	OCR Scan	PDF	4214A 64-bit HYM5V64214A HY51V178046 HYM5V64214AZG/AT2G/ASLZGiASLTZG 1EC07-1O-FEB96 HVM5V64214AZG HYM5V64214ASLZG