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Text: 4855452 INTERNATIONAL RECTIFIER IO R 73 73C .07169 D Data Sheet No. PD-2.137 in t e r n a t i o n a l r e c t i f i e r D E | 4ASS455 0 0 0 7 1 ^ 5 | R23D & R23DR SERIES 1800 - 1200 VOLTS RANGE 300 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS
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4ASS455
R23DR
DD-205AB
R23DR16A.
QD07173
D0-205AB
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Untitled
Abstract: No abstract text available
Text: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve
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IRGB430U
O-220AB
0G20375
TQ-220AB
4ASS452
02037b
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Abstract: No abstract text available
Text: 4BSS4S2 DD1S13D 131 • INR PD-9.738 International i»R Rectifier _IRFI634G HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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DD1S13D
IRFI634G
O-220
M65S452
001513S
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Untitled
Abstract: No abstract text available
Text: ? PD-2.461 International g« ]Rectifier HFA70NC60CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMI3N CATHODE Features VR = 600V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.5V Qrr * = 520nC
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HFA70NC60CSL
520nC
80A/MS
617237066IR
Liguria49
4ASS455
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Abstract: No abstract text available
Text: 2 International I R Rectifier PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, t*. =10ps, VCC = 720V , T j = 125°C, VGe =15V • Combines low conduction losses with high
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IRG4PH40K
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Untitled
Abstract: No abstract text available
Text: Bulletin 120205 International S»r]Rectifier 12F R SERIES STANDARD RECOVERY DIODES Stud Version Features H igh su rg e cu rre n t c a p a b ility A va la n ch e typ e s a va ila b le S tud c a th o d e and stud a n o d e ve rs io n W id e cu rre n t range
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Untitled
Abstract: No abstract text available
Text: International ¡^Rectifier_ HEXFET Power MOSFET P D -9.1271 IRFD214 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d ss = 2 5 0 V ^ D S o n = 2 . 0 ß
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IRFD214
DQ2244S
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Untitled
Abstract: No abstract text available
Text: PD-9.1001 International i » r R ectifier_ IRFI734G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 450V
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IRFI734G
O-220
D-6380
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RECTIFIER DIODE UG 94
Abstract: smd diode 12c IRF840S marking S54 SMD CODE
Text: PD-9.1013 International jK?R Rectifier IRF840S HEXFET Power MOSFET D VDSS= 500V G\ _ h L L Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements ^DS on = 0.85Q
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IRF840S
SMD-220
4ASS452
IRF840LC
RECTIFIER DIODE UG 94
smd diode 12c
IRF840S marking
S54 SMD CODE
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