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Catalog Datasheet	MFG & Type	Document Tags	PDF
IRGBC46 Abstract: VQE 22 vqe 22 d RGBC4 Text: INTERNATIONAL RECTIFIER SbE D • 4SSS452 OOlQblS b ■ Data Sheet No. PD-9.667 T-3^-03 In f e m a t ip n a l INSULATED GATE BIPOLAR TRANSISTOR IRGBC46 60QV, 60A / 0 V\ lIO R lR e c t i f i e r Ü ■ V 600V, 60A, TO-220AB IGBT FEATURES International Rectifier's IRG series of Insulated Gate	OCR Scan	SS452 IRGBC46 O-220AB IRGBC46 VQE 22 vqe 22 d RGBC4	PDF
Untitled Abstract: No abstract text available Text: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary	OCR Scan	IR2110L IR2110L MO-Q36AB	PDF
Untitled Abstract: No abstract text available Text: International B Rectifier HEXFRED Provisional Data Sheet PD-2.361 HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M ajor Ratings and Characteristics per Leg Characteristics Units Vr 1200 V 8 .0 A V rrm I f AV) trr (typ) 28 ns Q rr (typ) 140 nC I rrm (typ)	OCR Scan	HFA16PA120C re3331, D-6380 4flSS452 002104b	PDF
Untitled Abstract: No abstract text available Text: PD - 9.688A International io r i Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve	OCR Scan	IRGBC30S O-220AB TQ-220AB S54S2	PDF
Untitled Abstract: No abstract text available Text: International S I Rectifier Data Sheet No. PD-6.076 IR02H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation	OCR Scan	IR02H420 IR02H420 5M-1982. D25T27	PDF
diode c552 Abstract: G0551 IRGDDN200M12 IGBT 200A 1200V G-549 Text: Ife g g jig g i^ B jK e c n n e r IR G D D N 2 0 0 M Î2 iR O R P N g n n M ig "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 1200V *c = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated	OCR Scan	IRGDDN200M12 IRGRDN200M12 100nH D02G344 diode c552 G0551 IGBT 200A 1200V G-549	PDF
Untitled Abstract: No abstract text available Text: 4855452 International !“R R ectifier OCH H I N R PD-9.642A IRFI840G HEXFET Pow er M O S F E T • • • • • 00J517A INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating	OCR Scan	IRFI840G 00J517A O-220	PDF
N mosfet 100v 200A Abstract: No abstract text available Text: International lira] Rectifier PD-9.813 IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz	OCR Scan	IRGMIC50U 20kHz IRGMIC50UD IRGMIC50UU O-259 G-114 N mosfet 100v 200A	PDF