Untitled
Abstract: No abstract text available
Text: H igh Performance 1MX16 CMOS DRAM •■ II 4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0
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1MX16
AS4C1M16E0
AS4LC1M16E0
42-pin
4C1M16E0)
4LC1M16E0)
AS4LC1M16E0
AS4LC1M16EO-70JC
42-pm
1M16E0
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T835
Abstract: No abstract text available
Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e
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AS4C1M16E0
AS4LC1M16E0
16E0-60JC
I6E0-60JC
42-pin
16E0-70JC
IM16E0
T835
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Untitled
Abstract: No abstract text available
Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0
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AS4LC1M16EÃ
42-pin
4C1M16EO-SO)
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4C1M16
Abstract: 1MX16 4LC1M16
Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout
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OCR Scan
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PDF
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1MX16
AS4LC1M16E0
42-pin
4C1M16E0)
4LC1M16E0)
6E0-50
4C1M16E0-60
6E0-70
AS4C1M16E0
4C1M16
4LC1M16
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