Untitled
Abstract: No abstract text available
Text: JEITA Package Code P-TSOP 1 48-12x18.4-0.50 RENESAS Code PTSA0048KD-B Previous Code 48P3E-B MASS[Typ.] 0.5g HD *2 D Index mark 48 *3 bp 1 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. S e *1 E
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48-12x18
PTSA0048KD-B
48P3E-B
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48pin TSOP
Abstract: No abstract text available
Text: E 25 48 EIAJ Package Code TSOP 48-P-1220-0.50 D HD JEDEC Code – F Weight g 24 1 Detail F Lead Material Cu Alloy A 48P3E-C A2 A1 e b L L1 y b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2 0.05 0.125
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48-P-1220-0
48P3E-C
48pin
48pin TSOP
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DSA00373
Abstract: No abstract text available
Text: 48P3E-C JEDEC Code – Weight g Lead Material Cu Alloy MD e EIAJ Package Code TSOP 48-P-1220-0.50 Plastic 48pin 12✕20mm TSOP( ) b2 HD e D 1 48 l2 Recommended Mount Pad E y Symbol 25 b 24 A F A1 c A2 L1 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD Dimension in Millimeters
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48P3E-C
48-P-1220-0
48pin
DSA00373
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48P3E-B
Abstract: 48-P-1220-0
Text: 48P3E-B Plastic 48pin 12✕20mm TSOP JEDEC Code – Weight(g) Lead Material Cu Alloy MD e EIAJ Package Code TSOP 48-P-1220-0.50 b2 HD D l2 e 48 1 Recommended Mount Pad E y 24 b Symbol 25 F A1 c A2 A L1 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD Dimension in Millimeters
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48P3E-B
48pin
48-P-1220-0
48P3E-B
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432W6
Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P
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240K6X-A
240P6Y-A
240P6Z-A
255F7F
256F7B
256F7X-A/B
256P6J-E
256P6K-E
272F7X-A/B
281S8-C
432W6
48P4B
hssop
44P3W-R
28P0
5P5T
tsop 2-54
42P9R
70P3S-M
479F7G
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100MHZ
Abstract: IC PACKAGE ELECTRICAL CHARACTERISTIC LCR 24p2n-a 136P6S-C
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES IC PACKAGE ELECTRICAL CHARACTERISTIC 6.2 IC PACKAGE ELECTRICAL CHARACTERISTICS Tables 1, 2 and 3 show electrical characteristics of packages of various types. They are called LCR values, which include Ls, Lm, Co, Cm,
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136P6S-C
100P6S-C
80P6N-C
208P6Y-A
64P6N-B
160P6E-A
44P6N-B
100MHZ
IC PACKAGE ELECTRICAL CHARACTERISTIC LCR
24p2n-a
136P6S-C
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ic tlp 759
Abstract: SL-BC050515TJ-1 JHB-TQ121214-M L196-49 L196-65A PTB54C SL-BG060615TJ-2 SL-BG060615TJ-1 ST-TQ070710TJ-1 PVQN0020KB-A
Text: Unit:mm The pin1 is located in the hatching portion Note : Numbers in parentheses are the numbers of Ics contained in five trays per inner box, and those without parentheses are the numbers of Ics contained in eight or nine trays per inner box.
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PVQN0020KB-A
PVQN0052KA-A
PVQN0064LB-A
PVQN0032KA-A
PVQN0032KB-A
PVQN0068KA-A
PVQN0048KA-A
PVQN0052LE-A
PVQN0036KA-A
JHB-PBG3131173
ic tlp 759
SL-BC050515TJ-1
JHB-TQ121214-M
L196-49
L196-65A
PTB54C
SL-BG060615TJ-2
SL-BG060615TJ-1
ST-TQ070710TJ-1
PVQN0020KB-A
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Untitled
Abstract: No abstract text available
Text: INAARRYYn. IMIN PPRREELLIM tio ification. al specifica MITSUBISHI LSIs MITSUBISHI LSIs . ecect to changege spbj t at fin a final nono is is an . s is Th e su arar e :eT: hi ictic itsits No e subject to ch Not limlim ricric etet m m ra ra pa pa e e m So Som
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M5M29KB/T800AVP
M5M29KB/T800AVP
608-BIT
576-WORD
288-WORD
BY16-BIT)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with
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M5M29GB/T160BVP-80
216-BIT
152-WORD
576-WORD
BY16-BIT)
M5M29GB/T160BVP
216-bit
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R1LV0816ASA-7SI
Abstract: R1LV0816ASA
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: R1LV0816ASA –5SI, 7SI R1LV0816ASA -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0395-0001 Rev.1.00 2009.12.08 Description The R1LV0816ASA is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV0816ASA is
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R1LV0816ASA
R1LV0816ASA
16bit
REJ03C0395-0001
288-words
16-bit,
48pin
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48P4B
Abstract: P/N146071 hssop 432W6 70P3S-M 10C2-C 136P6S-C 20P5A
Text: 3. DETAILED DIAGRAM OF PACKAGE OUTLINES LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PACKAGE TYPE Pin Count Structure 5 8 8 10 12 9 12 12 14 16 20 24 8 14 16 18 18 20 20 22 22 24 24 24 24 28 28 28 30 32 32 32 40 42 20 28 30 32 36 40 42 48 52 64 P P P P P
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240K6X-A
30S1B
42S1B-A
52S1B-B
64S1B-E
124S8
135S8-F
145S8
149S8
177S8
48P4B
P/N146071
hssop
432W6
70P3S-M
10C2-C
136P6S-C
20P5A
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62H01
Abstract: No abstract text available
Text: MITSUBISHI LSIs Y ELIMINAR PR tion. al specifica is is not a fin change. Notice : Th e subject to ar its lim ric et m ra pa e Som M5M29FB/T160AVP,RV-80,-10,-8I 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1,048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T160AVP
RV-80
216-BIT
152-WORD
576-WORD
BY16-BIT)
216-bit
48pin
62H01
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1. Mobile Computing block diagram
Abstract: M5M29GB320VP M5M29GT320VP 320VP
Text: Renesas LSIs M5M29GB/T320VP-80 33,554,432-BIT 4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO
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M5M29GB/T320VP-80
432-BIT
304-WORD
152-WORD
BY16-BIT)
M5M29GB/T320VP
432-bit
REJ03C0025
1. Mobile Computing block diagram
M5M29GB320VP
M5M29GT320VP
320VP
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M5M29GB160BVP
Abstract: M5M29GT160BVP
Text: MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with
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M5M29GB/T160BVP-80
216-BIT
152-WORD
576-WORD
BY16-BIT)
M5M29GB/T160BVP
216-bit
48P3E
48pin
M5M29GB160BVP
M5M29GT160BVP
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1. Mobile Computing block diagram
Abstract: M5M29GT320VP M5M29GB320VP
Text: Renesas LSIs M5M29GB/T320VP-80 33,554,432-BIT 4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO
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M5M29GB/T320VP-80
432-BIT
304-WORD
152-WORD
BY16-BIT)
M5M29GB/T320VP
432-bit
REJ03C0025
1. Mobile Computing block diagram
M5M29GT320VP
M5M29GB320VP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M29KBT800AVP P U E U M W A R Y 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT _ CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY Noti S o rn B T ’ DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29KB/T800AVP is 5.0V-only high speed 8,388,608-bit CM OS boot block Flash Mem ories with
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M5M29KBT800AVP
608-BIT
576-WORD
288-WORD
BY16-BIT)
29KB/T800AVP
608-bit
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M5M29GB160BVP
Abstract: M5M29GT160BVP
Text: MITSUBISHI LSIs M5M29GBT160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT /1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29G B/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Mem ories with
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M5M29GBT160BVP-80
216-BIT
152-WORD
576-WORD
BY16-BIT)
M5M29GB/T160BVP
216-bit
M5M29GB160BVP
M5M29GT160BVP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs p r e l im in a r y M 5 M 2 9 J B / T 1 6 0 A V P - 8 0 ,J- 1 0 Som e { 16,777,216-BIT 2,097,152-WORD BY 8-BIT /1,048,576-WORD BY16-BIT _CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M 5M 29JB/T160A
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216-BIT
152-WORD
576-WORD
BY16-BIT)
29JB/T160A
216-bit
29J160A
48pin
2j097
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M5M28FB800
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M28FB800VP-12I ÿome 8388608-BIT 524288-WORD BY 16-BIT CMOS 3.3V/5V BACK GROUND OPERATION FLASH MEMORY * DESCRIPTION The M5M28FB800 is 3.3V(read)/5V(program/ erase) high speed 8388608-bit CMOS boot block Flash Memory suitable for mobile
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M5M28FB800VP-12I
8388608-BIT
524288-WORD
16-BIT)
M5M28FB800
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P-8388
Abstract: No abstract text available
Text: MITSUBISHI LSIs P R E L IM IN A R ^ ^ . ± nt Ä c U o % a n ge. M5M29KB/T800AVP 8,388,608-BIT 1048,576-WORD BY 8-BIT 1524,288-WORD BY16-BIT CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29KB/T800AVP Is 5.0V-only high speed 8,388,608-bit CMOS boot block Flash Memories with
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M5M29KB/T800AVP
608-BIT
576-WORD
288-WORD
BY16-BIT)
M5M29KB/T800AVP
608-bit
48P3E-B
P-8388
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Tcs3c
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M29GBT800AVP,RV P U E U M W A R Y 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT _ CMOS 3.3V-ONLY. BLOCK ERASE FLASH MEMORY Noti SornBT’ DESCRIPTION The MITSUBISHI Mobile FLASH M 5M 29GB/T800AVP, RV are 3.3V-only high speed 8,388,608-bit CM OS boot block Flash Mem ories with
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M5M29GBT800AVP
608-BIT
576-WORD
288-WORD
BY16-BIT)
29GB/T800AVP,
608-bit
Tcs3c
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs p r e l im in a r y n o t a fin a i s ^ J ^ M5M29FB/T160A VP,RV-80,-10,-81 nc h a n g e . 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1 ,048,576-WORD BY16-BIT S o m e p a r a m e t r i c lim itó a r e CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T160A
RV-80
216-BIT
152-WORD
576-WORD
BY16-BIT)
29FB/T160AVP
216-bit
Mar/98
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Untitled
Abstract: No abstract text available
Text: . ik IJ V R Y MITSUBISHI LSIs pbeumWAw M5M29G B/T008/801AWG Th\q is not a final sp e 1 10 change. Notice¿Metric limits are subiec So 8 ,38 8,60 8-B IT 1048,576-W O R D BY 8 -B IT / 524,288-W O R D B Y16-B IT CMOS 3.3V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION
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M5M29G
B/T008/801AWG
Y16-B
M5M29GB/T008/801
608-bit
48P3E-C
148-P-1220-0
48pin
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