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    48P1 Price and Stock

    Mean Well GST36U48-P1J

    AC/DC WALL MOUNT ADAPTER 48V 36W
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    DigiKey GST36U48-P1J Box 124 1
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    Master Electronics GST36U48-P1J 79
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    Mean Well SGAS06E48-P1J

    PWR SUPP, BATT & COND
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    DigiKey SGAS06E48-P1J Bulk 65 1
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    Mean Well SGAS06U48-P1J

    PWR SUPP, BATT & COND
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    DigiKey SGAS06U48-P1J Bulk 65 1
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    Sanyo-Denki Co Ltd 9TN48P1H01

    FAN AXIAL 150X35MM 48VDC WIRE
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    DigiKey 9TN48P1H01 Box 39 1
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    PUI 9TN48P1H01 20 26 Weeks 10
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    Master Electronics 9TN48P1H01 10
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    Mean Well GSM60U48-P1J

    AC/DC WALL MOUNT ADAPTER 48V 60W
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    DigiKey GSM60U48-P1J Box 35 1
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    Newark GSM60U48-P1J Bulk 18 1
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    48P1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


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    PDF TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


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    PDF TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S

    THGBM1G5D2EBAI7

    Abstract: THGBM1G8D8EBAI2 THGBM1G6D4EBAI4 THGBM1G4D1EBAI7 TH58NVG4S0DTG20 toshiba THGBM1G4D1EBAI7 TH58NVG4 toshiba TH58NVG5 THGBM1G THGBM
    Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2009-8 SCE0004I NAND Flash Memory SLC Small Block Capacity Part Number 512 Mbits TC58DVM92A3TA00 TC58DVM92A3BAJW TC58DVG02A3TA00 512 Mbits 1 Gbits Access Time Program/Erase Time typ.


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    PDF SCE0004I 48-P-1220-0 P-TFBGA63-0813-0 TC58DVM92A3TA00 TC58DVM92A3BAJW TC58DVG02A3TA00 THGBM1G5D2EBAI7 THGBM1G8D8EBAI2 THGBM1G6D4EBAI4 THGBM1G4D1EBAI7 TH58NVG4S0DTG20 toshiba THGBM1G4D1EBAI7 TH58NVG4 toshiba TH58NVG5 THGBM1G THGBM

    TH58NVG4S0DTG20

    Abstract: THGBM1G5D2EBAI7 TH58NVG5S0DTG20 THGBM1G6D4EBAI4 TC58NVG3S0DTG00 THGBM1G4D1EBAI7 THGVS4G3D1EBAI8 THGBM1G8D8EBAI2 tc58nvg3 TH58NVG4
    Text: 東芝半導体製品総覧表 2009 年 7 月版 メモリ/ストレージデバイス NAND 型フラッシュメモリ 1 2009/7 SCJ0004N NAND 型フラッシュメモリ SLC 小ブロック 容量 512 Mbits 512 Mbits 1 Gbits 品 番 ページサイズ bit


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    PDF SCJ0004N TC58DVM92A3TA00 TC58DVM92A3BAJW TC58DVG02A3TA00 48-P-1220-0 P-TFBGA63-0813-0 TH58NVG4S0DTG20 THGBM1G5D2EBAI7 TH58NVG5S0DTG20 THGBM1G6D4EBAI4 TC58NVG3S0DTG00 THGBM1G4D1EBAI7 THGVS4G3D1EBAI8 THGBM1G8D8EBAI2 tc58nvg3 TH58NVG4

    TC58DAM72A1FT00

    Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
    Text: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


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    PDF TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 128-MBIT 16BITS) TC58DxM72x1xxxx bytes/264 528-byte/264-words TC58DAM72A1FT00 TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X

    MR27V1602E

    Abstract: MR27V1602EMA MR27V1602ETN MR27V1602ETP
    Text: PEDR27V1602E-01-01 1Semiconductor MR27V1602E This version : Dec. 1999 Previous version: - Preliminary 1,048,576–Word x 16–Bit or 2,097,152–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V1602E is a 16 Mbit electrically Programmable Read-Only Memory that can be electrically switched


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    PDF PEDR27V1602E-01-01 MR27V1602E MR27V1602E 576-word 16-bit 152-word MR27V1602EMA MR27V1602ETN MR27V1602ETP

    MR27T802F

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    PDF

    MR27T1602L

    Abstract: A13 MARKING CODE
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    PDF FEDR27T1602L-002-03 MR27T1602L 576-word 16-bit 152-word MR27T1602L-xxxMA 44-pin OP44-P-600-1 MR27T1602L-xxxTN 48-pin MR27T1602L A13 MARKING CODE

    DIP42-P-600-2

    Abstract: MR27V1652E
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    PDF

    MR27V802F

    Abstract: MR27V802FMA MR27V802FTN MR27V802FTP
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    PDF

    MR27V1652L

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    PDF

    MR27V3202F

    Abstract: MR27V3202FMA MR27V3202FTN MR27V3202FTP
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    PDF MR27V3202F FEDR27V3202F-01-04 MR27V3202F 152-word 16-bit 304-word 16-bit/4 MR27V3202FMA MR27V3202FTN MR27V3202FTP

    TSOP 173 g

    Abstract: MR27V1602E
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original
    PDF MR27V1602E FEDR27V1602E-02-03 MR27V1602E 576-word 16-bit 152-word 16-bit/2 TSOP 173 g

    MR27V6402G

    Abstract: OKI marking code
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    PDF

    MR27T3202L

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original
    PDF FEDR27T3202L-002-04 MR27T3202L 152-word 16-bit 304-word MR27T3202L-xxxMA 44-pin OP44-P-600-1 MR27T3202L-xxxTN 48-pin MR27T3202L

    MR27V802F

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    PDF

    MR27V3252J

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original
    PDF FEDR27V3252J-002-02 MR27V3252J 152-word 16-bit 304-word 16-word MR27ystem MR27V3252J

    MR27T3202L

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    PDF

    A110

    Abstract: TC55W1600FT TC55W1600FT-55 48-P-1220-0
    Text: T O S H IB A TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by


    OCR Scan
    PDF TC55W1600FT-55 576-WORD 16-BIT/2 152-WORD TC55W1600FT 216-bit 48-P-1220-0 A110

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX1 6827FT LOW -VOLTAGE 20-BIT BUS BUFFER W ITH 3.6 V TOLERANT INPUTS A N D OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt


    OCR Scan
    PDF TC74VCX16827FT TC74VCX1 6827FT 20-BIT TC74VCX16827FT 20-bit 10-bit 10-bit TSSOP56-P-0061-0

    TC58128FT

    Abstract: TC58128FTI TOSHIBA cmos memory -NAND
    Text: TOSHIBA TC58128FTI TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024 blocks.


    OCR Scan
    PDF TC58128FTI 128-MBIT TC58128 528-byte 48-P-1220-0 TC58128FT TC58128FTI TOSHIBA cmos memory -NAND

    TH58512FT

    Abstract: No abstract text available
    Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.


    OCR Scan
    PDF TH58512FT 512-MBIT TH58512 528-byte 48-P-1220-0 TH58512FT

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V400AFT/ATR-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 262,144 words


    OCR Scan
    PDF TC55V400AFT/ATR-55 144-WORD 16-BIT TC55V400AFT/ATR 304-bit 48-P-1214-0

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC55W1600FT-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by


    OCR Scan
    PDF TC55W1600FT-55 TC55W1600FT 216-bit 48-P-1220-0 TC55W1600FT-55f-70