Untitled
Abstract: No abstract text available
Text: SSG8N10 8A , 100V , RDS ON 48mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free SOP-8 DESCRIPTION The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSG8N10
SSG8N10
8N10SC
25-Apr-2013
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Untitled
Abstract: No abstract text available
Text: AP9979GH/J RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS Single Drive Requirement RDS ON Surface Mount Package ID 60V 48m 20A G S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9979GH/J
O-252
AP9979GJ)
O-251
O-251
9979GJ
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FDD4243
Abstract: FDD4243-F085
Text: FDD4243_F085 P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ Features Applications Typ rDS on = 36mΩ at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely low
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FDD4243
130oC,
FDD4243-F085
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SOT23-6
Abstract: SSF2429 "battery protection" battery protection sot23-6 TOP marking sot23-6
Text: SSF2429 DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V
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SSF2429
SSF2429
OT23-6
OT23-6
180mm
25unless
SOT23-6
"battery protection"
battery protection sot23-6
TOP marking sot23-6
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APM3054ND
Abstract: apm3054 sot89 MARKING 3C 48M025 APM3054N STD-020C
Text: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)
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APM3054ND
OT-89
APM3054N
APM3054N
APM3054
APM3054ND
apm3054
sot89 MARKING 3C
48M025
STD-020C
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88N30W
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP88N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 48mΩ ID 48A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP88N30W-HF-3
AP88N30W-HF-3
AP88N30
88N30W
88N30W
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Untitled
Abstract: No abstract text available
Text: GDSSF2429 DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V
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GDSSF2429
SSF2429
OT23-6
SSF2429
OT23-6
180mm
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APM3054N
Abstract: 0118-B transistor apm3054n equivalent J-STD-020A marking 8A* sot-223 m3054n
Text: APM3054N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/15A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package 1
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APM3054N
0V/15A,
O-252
OT-223
O-252
OT-223
OT-89
APM3054N
0118-B
transistor apm3054n equivalent
J-STD-020A
marking 8A* sot-223
m3054n
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DMN2075
Abstract: DMN2075UDW-7
Text: DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on max V(BR)DSS TA = 25°C 48mΩ @ VGS = 4.5V 2.8A 59mΩ @ VGS = 2.5V 2.6A 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN2075UDW
AEC-Q101
OT363
DS35542
DMN2075
DMN2075UDW-7
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SSF3402
Abstract: "battery protection" 3402 transistor
Text: SSF3402 D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V
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SSF3402
SSF3402
OT-23
OT-23
180mm
25unless
"battery protection"
3402 transistor
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9979GH
Abstract: AP9979GH
Text: AP9979GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS ON 48mΩ ▼ Surface Mount Package ID ▼ Low Gate Charge D 20A G S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9979GH/J
O-252
AP9979GJ)
O-251
O-251
9979GJ
9979GH
AP9979GH
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Untitled
Abstract: No abstract text available
Text: PPJA3406 30V N-Channel Enhancement Mode MOSFET Voltage 30 V 4.4A Current SOT-23 Unit: inch mm Features RDS(ON) , VGS@10V, [email protected]<48mΩ RDS(ON) , [email protected], [email protected]<70mΩ Advanced Trench Process Technology Specially Designed for switch Load, PWM applications,
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PPJA3406
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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4511gh
Abstract: 4511g transistor 4511gh AP4511GH AP4511 mosfet VDS 30V ID 6A TO 252 To-252
Text: AP4511GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 RDS ON 30mΩ ID P-CH BVDSS RDS(ON) ID 15A -35V 48mΩ -12A ▼ Good Thermal Performance ▼ Fast Switching Performance
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AP4511GH
O-252-4L
O-252
4511GH
4511gh
4511g
transistor 4511gh
AP4511GH
AP4511
mosfet VDS 30V ID 6A TO 252
To-252
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cm03x
Abstract: APM2603 M03X APM2603C STD-020C
Text: APM2603C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS ON =48mΩ(typ.) @ VGS=-4.5V RDS(ON)=85mΩ(typ.) @ VGS=-2.5V RDS(ON)=135mΩ(typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6
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APM2603C
-20V/-4A,
OT-23-6
APM2603
APM2603
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
cm03x
M03X
APM2603C
STD-020C
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transistor apm3054n equivalent
Abstract: A102 APM3054N APM3054NU APM3054
Text: APM3054NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/20A, RDS ON =48mΩ (typ.) @ VGS=10V RDS(ON)=75mΩ (typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available
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APM3054NU
0V/20A,
O-252
APM3054N
APM3054N
transistor apm3054n equivalent
A102
APM3054NU
APM3054
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A102
Abstract: APM3054N APM3054NV 4A SOT223 MARKING CODE
Text: APM3054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of SOT-223 Lead Free and Green Devices Available
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APM3054NV
OT-223
APM3054N
APM3054N
A102
APM3054NV
4A SOT223 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: APM3054NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM3054NU
0V/12A,
O-252
3054N
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M03X
Abstract: No abstract text available
Text: APM2603C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS ON =48mΩ(typ.) @ VGS=-4.5V RDS(ON)=85mΩ(typ.) @ VGS=-2.5V RDS(ON)=135mΩ(typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6
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APM2603C
-20V/-4A,
OT-23-6
APM2603
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
M03X
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3054n
Abstract: A102 APM3054NV STD-020C 864V
Text: APM3054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of SOT-223 Lead Free Available (RoHS Compliant)
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APM3054NV
OT-223
3054N
OT-89
3054n
A102
APM3054NV
STD-020C
864V
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2329GN-HF-3 P-channel Enhancement-mode Power MOSFET D Simple Drive Requirement BV DSS Lower On-resistance Surface Mount Device R DS ON G RoHS-compliant, halogen-free -30V 48mΩ ID S -4.3A Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP2329GN-HF-3
AP2329GN-HF-3
OT-23
OT-23
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IC tl 072
Abstract: APM3054ND STD-020C
Text: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)
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APM3054ND
OT-89
3054N
IC tl 072
APM3054ND
STD-020C
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apm3054
Abstract: A102 APM3054N APM3054ND marking code IR SOT89
Text: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V G RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Top View of SOT-89 Reliable and Rugged (2) D Lead Free and Green Devices Available
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APM3054ND
OT-89
APM3054N
APM3054N
APM3054
XXX60
apm3054
A102
APM3054ND
marking code IR SOT89
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ZXTN25060BZTA
Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZXTN25060BZ
D-81541
ZXTN25060BZTA
TS16949
ZXTN25060BZ
SOT89 transistor marking 5A
marking 1c7
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Untitled
Abstract: No abstract text available
Text: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged
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APM2101SG
-20V/-3
JSC70-8
APM2101
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
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