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Littelfuse Inc IXFX48N60P MOSFET N-CH 600V 48A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX48N60P	Tube			300	1 - 10 - 100 - 1000 $10.47827 10000 $10.47827	Buy Now
Newark	IXFX48N60P	Bulk			300	1 - 10 - 100 - 1000 $10.99 10000 $10.99	Buy Now
Littelfuse Inc IXFN48N60P MOSFET N-CH 600V 40A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN48N60P	Tube			1	1 $26.76 10 $20.241 100 $26.76 1000 $26.76 10000 $26.76	Buy Now
Newark	IXFN48N60P	Bulk			300	1 - 10 - 100 - 1000 $19.74 10000 $19.74	Buy Now
RS	IXFN48N60P	Bulk		8 Weeks	10	1 - 10 $29.13 100 $29.13 1000 $29.13 10000 $29.13	Get Quote
Littelfuse Inc IXFR48N60P MOSFET N-CH 600V 32A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR48N60P	Tube			1	1 $17.99 10 $17.99 100 $11.85567 1000 $17.99 10000 $17.99	Buy Now
RS	IXFR48N60P	Bulk		8 Weeks	30	1 - 10 - 100 $17.85 1000 $17.85 10000 $17.85	Get Quote
Littelfuse Inc IXFK48N60P MOSFET N-CH 600V 48A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK48N60P	Tube			1	1 $19.82 10 $19.82 100 $19.82 1000 $19.82 10000 $19.82	Buy Now
Newark	IXFK48N60P	Bulk			300	1 - 10 - 100 - 1000 $11.71 10000 $11.71	Buy Now
RS	IXFK48N60P	Bulk		8 Weeks	25	1 - 10 - 100 $17.27 1000 $17.27 10000 $17.27	Get Quote
IXYS Corporation IXFN48N60P MOSFET Modules 600V 48A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN48N60P					1 $29.37 10 $21.72 100 $20.25 1000 $20.25 10000 $20.25	Get Quote
TTI	IXFN48N60P	Tube			300	1 - 10 - 100 - 1000 $18.83 10000 $18.83	Buy Now
TME	IXFN48N60P				1	1 $26.81 10 $26.81 100 $20.84 1000 $20.69 10000 $20.69	Get Quote
New Advantage Corporation	IXFN48N60P		140		1	1 - 10 - 100 $46.42 1000 $43.33 10000 $43.33	Buy Now

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48N60P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
48N60 Abstract: sot 227b FS 8860 48N60P Text: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	48N60P 48N60 sot 227b FS 8860 48N60P
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET VDSS ID2 IXFK 48N60P IXFX 48N60P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	48N60P O-264
48N60 Abstract: ISOPLUS247 IXFR48N60P A160M Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 600 V = 32 A ≤ 160 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol	Original	PDF	48N60P ISOPLUS247TM 48N60 ISOPLUS247 IXFR48N60P A160M
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	48N60P
48N60 Abstract: IXFK 48n60p 48N60P PLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous	Original	PDF	48N60P O-264 O-264) 48N60 IXFK 48n60p 48N60P PLUS247
48N60 Abstract: 48N60P PLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	48N60P O-264 48N60 48N60P PLUS247
48N60 Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 48 A ≤ 135 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	48N60P OT-227 E153432 48N60
IXFR48N60P Abstract: FS 8860 48n60 ISOPLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A ≤ 150 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	PDF	48N60P ISOPLUS247TM IXFR48N60P FS 8860 48n60 ISOPLUS247
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A Ω ≤ 150 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	PDF	48N60P ISOPLUS247TM
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

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Littelfuse Inc IXFX48N60P

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48N60

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7N60B equivalent

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