D787D
Abstract: hcj 6a pl 431 a88b HCJ 7E L 5431 PL 431 transistor 53af BC976 FAD39
Text: <:D00 DA>=8 DE6E9 C9>6I :MJXYVMW T {},vu- AGFBGF T ts 5A@FDA> T zAI A@bEF3F7 D7E;EF3@57 T ~:AFA ;EA>3F;A@ T t;7>75FD;5 EFD7@9F: gjee/ T u@H;DA@?7@F3> 8D;7@6>K BDA6G5F ^+Ax, 5A?B>;3@F_ 89D7C=BE=A@ xv,hh ,7D;7E A887D h/ts FA hg/ts ;@BGF 5A@FDA> 3@6 GE7 {},vu- F75:@A>A9K FA BDAH;67 3@ 75A@A?;53> 3@6 D7>;34>7 ?7F:A6
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89D7C
A887D
BC976FE
EGBBD7EE76c
63F3E
D787D7
67F7D?
75FDA35AGEF
D7E7DH76c
D787D
hcj 6a
pl 431
a88b
HCJ 7E
L 5431
PL 431 transistor
53af
BC976
FAD39
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kb3926
Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
Text: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2
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Turion64
5W/35W
667mhz
667mhz
NB8M-64bit
RJ-45
PC112
330U/2V/9m
330U/2V/9m
kb3926
kb3926 d3
MAX8774
MCP67D
Maxim MAX8774
kb3920
short stop 12v p18 30a
kb3926 d2
ac30 c51 100v 10p
quanta at1
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9F60DMH905
Abstract: No abstract text available
Text: Transformer Protection Amp-Trap CS-3 Series and 9F60/9F62 Series 2.75kV, 5.5kV, 8.25kV, 15.5kV, 25.8kV and 38kV Ferrule Mounted Fuses Mersen fuses for the protection of transformers and distribution lines deliver overload and short circuit protection. These current-limiting fuses will melt at current that can
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9F60/9F62
A155F1D0R0-65E
A155F1D0R0-100E
A155F2D0R0-175E
A155F2D0R0-200E
A155F2D0R0-150E
A155F2D0R0-125E
A155F1D0R0-80E
9F60DMH905
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9F62FCB300
Abstract: A055F1D0R0100E A055F2D0R0-450E
Text: Transformer Protection Amp-Trap CS-3 Series and 9F60/9F62 Series 2.75kV, 5.5kV, 8.25kV, 15.5kV, 25.8kV and 38kV Ferrule Mounted Fuses Mersen fuses for the protection of transformers and distribution lines deliver overload and short circuit protection. These current-limiting fuses will melt at current that can
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9F60/9F62
9F60FJD040
9F60FJD030
9F60DJD025
9F60DJD020
9F60DJD015
9F60DJD005
9F60DJD003
9F60DJD002
9F60DJD001
9F62FCB300
A055F1D0R0100E
A055F2D0R0-450E
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kb3926
Abstract: Maxim MAX8774 kb3920 MCP67M KB3926 D2 kb3926 d3 MAX8774 quanta at1 GFX27M RTL8211
Text: 1 2 PCB STACK UP RUN POWER SW LAYER 1 : TOP LAYER 2 : SGND1 A 3 AC/BATT CONNECTOR PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2
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Turion64
5W/35W
667mhz
667mhz
RJ-45
PC112
330U/2V/9m
330U/2V/9m
PC118
kb3926
Maxim MAX8774
kb3920
MCP67M
KB3926 D2
kb3926 d3
MAX8774
quanta at1
GFX27M
RTL8211
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LTC1117
Abstract: NFM60R30T222 AT93LC46 MIC5284 4K7A SM731GX16BC sd diode mx c425 i82551 ST MX C507 JMP2MM
Text: Intel Pentium® 4 Processor-M and Intel® 845E Chipset Platform Design Guide Addendum for Embedded Applications April 2003 Order Number: 251319-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
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100nA
B444B-W
LTC1117
NFM60R30T222
AT93LC46
MIC5284
4K7A
SM731GX16BC
sd diode mx c425
i82551
ST MX C507
JMP2MM
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Untitled
Abstract: No abstract text available
Text: KSR1013 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R,»2.2kQ, Rj-47ka) • Complement to KSR2013 A B S O L U T E MAXIMUM RATINGS (TA= 2 5 r)
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KSR1013
Rj-47ka)
KSR2013
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4800b
Abstract: circuit diagram of 4800b 4800B ic ic 4800b CIRCUIT 4800b 4800B POWER IC SFH 910 235 SFH 209 SFH 212 FX909
Text: eoMü G * CML Semiconductor Products PRODUCT INFORMATION FX909 GMSK “Packet Data” Modem Features • Automatic Protocol Handling [Bit and Frame Sync, Block Formatting, CRC and FEC, Interleaving and Scrambling] • • • Half-Duplex Operation at 4,000 to 19,200b/s
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FX909
200b/s
D/909/1
FX909
FX909J
24-pin
FX909LS
24-lead
4800b
circuit diagram of 4800b
4800B ic
ic 4800b
CIRCUIT 4800b
4800B POWER IC
SFH 910 235
SFH 209
SFH 212
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Untitled
Abstract: No abstract text available
Text: RN4605 SILICON PNP EPITAXIAL PLANAR TYPE SILIC0N NPN EPITAXIAL PLANAR TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AN D DRIVER CIRCUIT APPLICATIONS. 2 .8 U nit in mm +02 0.3 - + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 Super Mini Type with 6 leads
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RN4605
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UM7106
Abstract: UM7107A ic UM7106 UM7107B um7107 DIP-40L um710 4001 BP led display board 4000 Counts
Text: UM7106/07A/07B 3 1/2 -D ig it A/D Converter Features • ■ ■ ■ ■ ■ ■ Guaranteed zero reading with zero input True polarity indication for precision null detection Low noise Convenient 9V battery operation Low power operation-10mW High Impedance CMOS differential inputs 10 n
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UM7106/07A/07B
operation-10mW
UM7106
UM7107A/B
470Kfl
47Kti
22/tF
UM7107A
ic UM7106
UM7107B
um7107
DIP-40L
um710
4001 BP
led display board
4000 Counts
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N * 7 M , ra O M ilL E g ¥ ô » il(ê § TD A 3562A PAL/NTSC ONE-CHIP DECODER • CHROMINANCE SIGNAL PROCESSOR ■ LUMINANCE SIGNAL PROCESSING WITH CLAMPING ■ HORIZONTAL AND VERTICAL BLANKING ■ LINEAR TRANSMISSION OF INSERTED RGB SIGNALS
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DIP28
TDA3562A
TDA3562A
007404b
DIP28
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qml-38535
Abstract: 4008B CDFP4-F16 au110 5962-XXXXXZZ
Text: REVISIONS LTR DESCRIPTION DATE APPROVED Y R -M O -D A REV SHEET REV SHEET REV STATUS OF SHEETS PM I C M /A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 8 PREPARED BY
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MIL-BUL-103.
MIL-BUL-103
cIDD47Dfl
qml-38535
4008B
CDFP4-F16
au110
5962-XXXXXZZ
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C4048
Abstract: 2SA1564 13KA 2SC404
Text: O rde rin g n u m b e r: E N 2 3 8 1 2SA1564/2SC4048 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O Switching Applications _ with Bias Resistance i Applications . Switching circuit, inverter circuit, interface circ^lV» dt^iör cÖöuit Features
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EN2381
2SA1564/2SC4048
2SA1564
32H7TA
C4048
2SA1564
13KA
2SC404
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Untitled
Abstract: No abstract text available
Text: HARRIS SENICOND S ECTOR H a r r i H3DSS71 Q D 3 ñ b m MbE D IHAS T 82C237 s S E M I C O N D U C T O R CMOS High Performance Programmable DMA Controller February 1992 Features Description • Fully Compatible with Harris 82C37A - 82C237 May be Used in 8MHz and 12.5MHz 82C37A
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H3DSS71
82C237
82C237
82C37A.
82C37A
16-bit
T--52--33--19-
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Untitled
Abstract: No abstract text available
Text: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and
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SM5819
40Vtms
BT2222A
BT2907A
BT3904
BT3906
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Untitled
Abstract: No abstract text available
Text: cP IITSU October 1998 Revision 1.0 data sheet PDC8R V7284C- 102/103 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M
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V7284C-
64MByte
PC/100
PDC8RV7284C-
64-megabyte
168-pin,
F64842C-
64MByteunt
72-pin
144-pin
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Untitled
Abstract: No abstract text available
Text: m in il^ ef Value Code inductor M*i Code .01 .012 .015 .018 000 011 001 009 Capacitors, Resistors & Inductors Code Mh Code Mh Code Code pF/Q pF/Q pF/Q pF/Q yh .16 .12 010 012 1.0 1.2 110 112 10 12 .15 .18 210 212 015 018 100 120 1.5 115 118 15 18 215 218 150
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6416H1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416H1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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THMY6416H1EG-75
THMY6416H1EG
216-word
64-bit
TC59SM708FT
64-bit
168-pin
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN4909 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4909 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2 . 1± 0.1 1.25 ± 0 . 1. • Including Two Devices in US6 (Ultra Super Mini Type with 6
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RN4909
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dual tracking power supply
Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
Text: M3DES71 H A OGSSTTD R R T33 • H AS I S C * A S E M I C O N D U C T O R M 'I f i Q d M Programmable Power Switch/Amplifier for Control and General Purpose Applications April 1994 Features Description • • • • • The CA3094 is a differential input power control switch/
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M3DES71
CA3094T,
CA3094AT,
CA3094BT,
AN6048
AN6048.
CA3094
dual tracking power supply
CA3094T
thermistor ntc 180m
0MA810
AN6048
transistor 2sc 1014
P-8609
CA3080
CA3094A
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Untitled
Abstract: No abstract text available
Text: SILICON PN P EPITAXIAL PLA N A R T Y P E SILICO N NPN EPITAXIAL PLA N A R T Y P E RN4906 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1 .2 5ÎQ .1 . • Including Two Devices in US6 Ultra Super Mini Type with 6
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RN4906
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Untitled
Abstract: No abstract text available
Text: MITEL Data Access Arrangement S E M IC O N D U C T O R Preliminary Information MH88437-P Features ISSUE3 FAX and Modem interface V.34/V.34+ Package Information Designed to work at data rates up to 56kbits • External programmable line and network balance impedances
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MH88437-P
56kbits
IEC950
1950llimetres)
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Untitled
Abstract: No abstract text available
Text: HCTS138MS fgl H A R R IS U S E M I C O N D U C T O R U Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer December 1992 Features • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K or 1 Mega-RAD Sl
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HCTS138MS
MIL-STD-1835,
10sA/cm2
100jim
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175487
Abstract: No abstract text available
Text: SHARP GP1A72A GP1A72A Small Size OPIC Photoftntemipter with Connector • Features ■ Outlne Dimensions 1. Compact type 2. Snap-in mounting type 3. 3-pin connector terminal Unit : mm Internal connection diagram VolSje regulator M-U ■ Applcattons U hr t
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GP1A72A
175487
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