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    470 860 MHZ PCB Search Results

    470 860 MHZ PCB Result Highlights (5)

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    ZLEDPCB2 Renesas Electronics Corporation LED Test PCBs Visit Renesas Electronics Corporation
    ZLEDPCB10 Renesas Electronics Corporation LED Test PCB - 12x 0.5W Visit Renesas Electronics Corporation
    ZLEDPCB1B Renesas Electronics Corporation LED Test PCB - 3W Visit Renesas Electronics Corporation
    ZLEDPCB8 Renesas Electronics Corporation LED Test PCB - 5W Visit Renesas Electronics Corporation
    RPI96B3TJ12P1LF Amphenol Communications Solutions DIN PCB ACCESSORIES Visit Amphenol Communications Solutions

    470 860 MHZ PCB Datasheets Context Search

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    2322-211

    Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
    Text: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57


    Original     		PDF BLV57 NCO8205 BLV57 SCA57 2322-211 Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz

    MRF373

    Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
    Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13

    thermistor r5t

    Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
    Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010

    MOSFET J132

    Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
    Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373/D MRF373 MRF373S MRF373S MRF373/D MOSFET J132 mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b

    MRF377H

    Abstract: 470-860 mhz Power amplifier w nippon capacitors 08051J4R7BBS 0805J C182
    Text: Freescale Semiconductor Technical Data RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377HR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF377H 27conductor MRF377HR3 MRF377H 470-860 mhz Power amplifier w nippon capacitors 08051J4R7BBS 0805J C182

    J239 mosfet transistor

    Abstract: L1AB
    Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF374A MRF374A J239 mosfet transistor L1AB

    marking c14a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a

    marking c14a

    Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001

    marking c14a

    Abstract: C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352
    Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A marking c14a C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352

    RF high POWER TRANSISTOR

    Abstract: MRF6VP3091 AN1955 25C2240 MRF6VP3091N QAM data ATC100B201 MRF6VP3091NR1
    Text: Document Number: MRF6VP3091N Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF high POWER TRANSISTOR MRF6VP3091 AN1955 25C2240 MRF6VP3091N QAM data ATC100B201

    LDMOS DVB-T transistors

    Abstract: T0272 MRF6VP3091N Rogers RO4350B 470 860 mhz application note RF high POWER TRANSISTOR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 MRF6VP3091N LDMOS DVB-T transistors T0272 Rogers RO4350B 470 860 mhz application note RF high POWER TRANSISTOR

    heraeus

    Abstract: uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 heraeus uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA

    MRF373AR1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373AR1 MRF373ALSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5

    RO3010

    Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
    Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372R3 MRF372R5 MRF372R3 MRF372 RO3010 marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372

    z14b

    Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3

    MRF377

    Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi

    chip capacitor vishay

    Abstract: Vj3640Y MRF373A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373AS chip capacitor vishay Vj3640Y

    DVB-T Schematic

    Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NBR1 MRF6VP3091N DVB-T Schematic LDMOS DVB-T transistors DVB-T acpr mrf6v3090n

    Untitled

    Abstract: No abstract text available
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 11-Mar-11

    RFW8021

    Abstract: heraeus Heraeus PD 860002 SA chip antenna express card DVB 86-0002
    Text: RFW8021 Vishay RFWaves RFW8021 Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 x 15.5 x 1.2 mm • • • • Omni directional, linear polarization Complies with MBRAI standard Complete UHF band coverage (470 MHz to 860 MHz) Requires a tuning circuit and ground plane for optimal


    Original     		PDF RFW8021 RFW8021 18-Jul-08 heraeus Heraeus PD 860002 SA chip antenna express card DVB 86-0002

    Untitled

    Abstract: No abstract text available
    Text: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz


    Original     		PDF WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A