MATERIAL SAFETY DATA SHEET
Abstract: AD10 AD11 AD12 AD14 ISAR34 PSB4595 PSB4596 PSB4600 TH2028.3
Text: ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.2 Preliminary Data Sheet 12.98 DS 1 PSB 4600 Revision History: Current Version: 12.98 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)
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smd diode marking code t056
Abstract: xf075 xf017 tyco igbt module 25A Thermistor PTC 265V* xf017 XF090 raychem* XF090 xf065 PolySwitch Resettable Devices xf250 PTC XF010
Text: Circuit Protection Business Unit Headquarters 308 Constitution Drive, Building H Menlo Park, CA USA 94025-1164 Tel : 800 227-7040, (650) 361-6900 Fax : (650) 361-4600 www.circuitprotection.com www.circuitprotection.com.hk (Chinese) www.tycoelectronics.com/japan/raychem (Japanese)
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886-2-876ose
RCP0060E
smd diode marking code t056
xf075
xf017
tyco igbt module 25A
Thermistor PTC 265V* xf017
XF090
raychem* XF090
xf065
PolySwitch Resettable Devices xf250
PTC XF010
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK1209JPE 120V - 80A - N Channel Power MOS FET High Speed Power Switching R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 14 mΩ typ. Low input capacitance: Ciss = 4600 pF typ
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RJK1209JPE
R07DS0691EJ0100
AEC-Q101
PRSS0004AE-B
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full bridge with IRFP450 schematic
Abstract: CPWR-AN02 smps fan speed control 4h sic irfp450 mosfet full bridge HFA08TB60 IRFP450 full bridge 100C IRFP450 Cree SiC MOSFET
Text: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, [email protected] Ph. 919 313-5539, Fax: (919) 313-5696
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F33615-00-2-2004
ments/027/313/WhitePaper
CPWR-AN02
full bridge with IRFP450 schematic
smps fan speed control
4h sic
irfp450 mosfet full bridge
HFA08TB60
IRFP450 full bridge
100C
IRFP450
Cree SiC MOSFET
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full bridge with IRFP450 schematic
Abstract: irfp450 mosfet full bridge 600 watt smps schematic switching with IRFP450 schematic sic diode 4h sic "silicon carbide" FET 500 WATT smps ixys dsei DSEI 12 06A
Text: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, [email protected] Ph. 919 313-5539, Fax: (919) 313-5696
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F33615-00-2-2004
ments/027/313/WhitePaper
full bridge with IRFP450 schematic
irfp450 mosfet full bridge
600 watt smps schematic
switching with IRFP450 schematic
sic diode
4h sic
"silicon carbide" FET
500 WATT smps
ixys dsei
DSEI 12 06A
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UniPHY
Abstract: vm 30 cpu Sandy Bridge xeon e5-2400 intel xeon e5-2400 PBAR23SZ Xeon e5 2600 v2 4H11 intel Sandy Bridge intel I5-750
Text: Intel Xeon® Processor E51600/2400/2600/4600 E5-Product Family Product Families Datasheet- Volume Two May 2012 Reference Number: 326509-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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E51600/2400/2600/4600
E5-1600/2400/2600/4600
UniPHY
vm 30 cpu
Sandy Bridge
xeon e5-2400
intel xeon e5-2400
PBAR23SZ
Xeon e5 2600 v2
4H11
intel Sandy Bridge
intel I5-750
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LTM4600
Abstract: LTM4600IV#PBF
Text: LTM4600 10A High Efficiency DC/DC µModule U FEATURES DESCRIPTIO • The LTM 4600 is a complete 10A, DC/DC step down power supply. Included in the package are the switching controller, power FETs, inductor, and all support components. Operating over an input voltage range of 4.5V to 20V, the
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LTM4600
LTM4600
LTM4601-1
LTM4601
100pF
C3216X5R1E106MT
JMK316BJ226ML-T501
4TPE470MCL
4600fb
LTM4600IV#PBF
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Untitled
Abstract: No abstract text available
Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F2
50-ohm,
CGHV96050F2
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Untitled
Abstract: No abstract text available
Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F2
50-ohm,
CGHV96100F2
CGHV96
100F2
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CGHV96050F2
Abstract: CGHV96
Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F2
50-ohm,
CGHV96050F2
CGHV96
050F2
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CGHV96100F2
Abstract: No abstract text available
Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F2
50-ohm,
CGHV96100F2
CGHV96
100F2
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Untitled
Abstract: No abstract text available
Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F1
50-ohm,
CGHV96050F1
CGHV96
050F1
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Untitled
Abstract: No abstract text available
Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F2
50-ohm,
CGHV96100F2
CGHV96
100F2
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CGHV96050F2
Abstract: No abstract text available
Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F2
50-ohm,
CGHV96050F2
CGHV96
050F2
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Untitled
Abstract: No abstract text available
Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F2
50-ohm,
CGHV96100F2
CGHV96
100F2
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CGHV96100F1
Abstract: taconic
Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F1
50-ohm,
CGHV96100F1
CGHV96
100F1
taconic
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Untitled
Abstract: No abstract text available
Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F1
50-ohm,
CGHV96050F1
CGHV96
050F1
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CGHV96050F1
Abstract: No abstract text available
Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F1
50-ohm,
CGHV96050F1
CGHV96
050F1
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Untitled
Abstract: No abstract text available
Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F1
50-ohm,
CGHV96100F1
CGHV96
100F1
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LTM4600
Abstract: ALUMINUM ELECTROLYTIC CAPACITOR SURFACE MOUNT G4 100UF 6V transistor t18 FET
Text: LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModules for 20A Output Current
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LTM4600
100pF
C3216X5R1E106MT
JMK316BJ226ML-T501
4TPE470MCL
4600f
ALUMINUM ELECTROLYTIC CAPACITOR SURFACE MOUNT G4 100UF 6V
transistor t18 FET
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.1 Preliminary Data Sheet 06.98 DS 1 PSB 4600 Revision History: Current Version: 06.98 P revious Version: Page in previous Version Page (in current V ersion)
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.2 Preliminary Data Sheet 12.98 DS 1 PSB 4600 Revision History: Current Version: 12.98 Previous Version: Page in previous Version Page (in current Version)
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25c020
Abstract: AD10 AD11 AD12 AD14 ISAR34 PSB4595 PSB4596 AD31-8 PSB4600
Text: S IE M E N S ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.1 Preliminary Data Sheet 06.98 DS 1 This Material Copyrighted By Its Respective Manufacturer PSB 4600 Revision History: Current Version: 06.98 Previous V ersion:
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6N80
Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68
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67N10
75N10
42N20
50N20
68N20
35N30
40N30
30N45
12N50A
21N50
6N80
IXTN 36N50 C
40N160
40N140
ixtn 79n20
irfp 240
IXTK33N50
IXTN21N100
IRFP
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