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Vishay Sfernice CS44-50MJ RES THIN FILM WIREBONABLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CS44-50MJ	Tray			100	1 - 10 - 100 $21.46 1000 $21.46 10000 $21.46	Buy Now
Cornell Dubilier Electronics Inc 225CKS450MJM CAP ALUM 2.2UF 20% 450V RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	225CKS450MJM	Bulk			32,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	225CKS450MJM		5,376			1 $0.54 10 $0.322 100 $0.209 1000 $0.149 10000 $0.117	Buy Now
Cornell Dubilier Electronics Inc 225CKE450MJM CAP ALUM 2.2UF 20% 450V RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	225CKE450MJM	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	225CKE450MJM					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies CS44-50MJ High Value Wirebondable Thin Film Chip Resistor 0404 Size 50M Ohm 5% 0.38 W ?100 ppm/?C 2-Pin SMD - Waffle Pack (Alt: CS44-50MJ)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CS44-50MJ	Waffle Pack		25 Weeks	100	1 - 10 - 100 $23.1768 1000 $15.89532 10000 $15.89532	Buy Now
Newark	CS44-50MJ	Bulk			100	1 - 10 - 100 $23.18 1000 $22.49 10000 $22.49	Buy Now
Illinois Capacitor Inc 225CKS450MJM Aluminum Electrolytic Capacitor 2.2Uf, 450V, 20%, Radial; Capacitance:2.2Μf; Voltage(Dc):450V; Capacitance Tolerance:± 20%; Capacitor Terminals:Pc Pin; Lifetime @ Temperature:2000 Hours @ 85°C; Polarity:Polar; Lead Spacing:3.5Mm Rohs Compliant: Yes \|Illinois Capacitor 225CKS450MJM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	225CKS450MJM	Bulk	500		32,000	1 - 10 - 100 - 1000 - 10000 $0.114	Buy Now
Master Electronics	225CKS450MJM					1 - 10 - 100 - 1000 $0.153 10000 $0.1135	Buy Now

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450MJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEME IRFN240 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 13.9A Ω 0.180Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF	Original	PDF	IRFN240 220SM 300ms,
3QN0402 Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04 Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary V DS 40 V R DS on 1.6 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 210nC 3QN0402 PG-TO263-7-3 IPB180N04S3-02 ipb180n04
Untitled Abstract: No abstract text available Text: Film-Foil Capacitors DTIC 90-500.0 r K Application: MKP-AC capacitor for general use in power electronics also for nonsinusoidal voltages and currents with low self inductance Standard: acc. to IEC 61071:2007 Characteristics Rated capacitance Rated a.c. voltage	Original	PDF	x10-4 DC/10s AC/10s 30min 100ms 450MJ
3PN0403 Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898 Text: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1	Original	PDF	IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
3qn04h2 Abstract: GD 898 A44E 165NC Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB160N04S3-H2 Product Summary V DS 40 V R DS on 2.4 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB160N04S3-H2 PG-TO263-7-3 3QN04H2 9600pF 2600pF 465pF 165nC 145nC 3qn04h2 GD 898 A44E
Untitled Abstract: No abstract text available Text: S EM E IRF240SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )	Original	PDF	IRF240SMD 00A/ms 300ms,
IRF240SMD Abstract: No abstract text available Text: SEME IRF240SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )	Original	PDF	IRF240SMD 00A/ms 300ms, IRF240SMD
IRF240SM Abstract: No abstract text available Text: SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 13.9A 0.180W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF	Original	PDF	IRF240SM 220SM 00A/ms 300ms, IRF240SM
Untitled Abstract: No abstract text available Text: IRFN240SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6	Original	PDF	IRFN240SMD 00A/ms 300ms,
IRFN240SMD Abstract: No abstract text available Text: IRFN240SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6	Original	PDF	IRFN240SMD 00A/ms 300ms, IRFN240SMD
km658128 Abstract: 658128 PSEUDO SRAM Text: KM658128/L/L-L/LD/LD-L Pseudo SRAM 12 8 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random ReadfWrite Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)	OCR Scan	PDF	KM658128/L/L-L/LD/LD-L 120ns 190ns 200mW KM658128LD/ 32-Pin 600mil) 525mil) 450mjl) km658128 658128 PSEUDO SRAM
lg diode 88A Abstract: IRF240SM Text: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE	OCR Scan	PDF	IRF240SM TQ-220SM 300ms, lg diode 88A IRF240SM
Untitled Abstract: No abstract text available Text: Illl W . mi SEME IRFN240 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 11.5 200V 13.9A 0.180ft V DSS 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.	OCR Scan	PDF	IRFN240 180ft O-220SM 300ms,
4-Character 5x7 Dot Matrix Abstract: alphan MIL-D-87157 MSD2351 led matrix 5x7 28 MSD235X Text: SIEMENS AKTIENGESELLSCHAF SIEMENS 4?E D ñP3ShDS 0GE70ED 1 H S I E 6 MSD2351TXV/TXVB high EFF. RED MSD2352TXV/TXVB HIGH EFF. GREEN MSD2353TXV/TXVB •F4V37 YELLOW Sunlight Viewable .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display	OCR Scan	PDF	fl235bD5 GG270E0 MSD2351TXV/TXVB MSD2352TXV/TXVB MSD2353TXV/TXVB -AV31 fl535bOS T-41-37 450mi MSD2351 4-Character 5x7 Dot Matrix alphan MIL-D-87157 led matrix 5x7 28 MSD235X