SAB8051
Abstract: ISO7816 44C40
Text: Security & Chip Card ICs SLE 44C42S 8-bit Security Controller with 17-Kbyte ROM, 256 byte RAM 4-Kbyte EEPROM and Sleep Mode Short Product Information 07.99 SLE 44C42S Short Product Information Revision History: Current Version 07.99 Previous Releases: 2.0 06.98
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44C42S
17-Kbyte
44C42S
D-81541
44C40.
SAB8051
ISO7816
44C40
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MC44BS373
Abstract: TPSRA4M50B00-B0 MC44C400 Audio Spectrum Analyzer 32LQFP COAXIAL SURROUND AUDIO ic MC44BS373CA mts stereo encoder MC44BC375 MC44C402
Text: Freescale Semiconductor Technical Data 44C402 Rev 1, 06/2005 MTS Stereo Encoder 44C402 The 44C402 Multi-Channel Television Sound MTS Stereo Encoder is based on the industry’s first, single-chip, CMOS implementation of a Broadcast Television Systems Committee (BTSC)-compatible stereo encoder, the
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MC44C402
MC44C402
MC44C400.
MC44BS373
TPSRA4M50B00-B0
MC44C400
Audio Spectrum Analyzer
32LQFP
COAXIAL SURROUND AUDIO ic
MC44BS373CA
mts stereo encoder
MC44BC375
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Untitled
Abstract: No abstract text available
Text: K M 44C4005BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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44C4005BK
KM44C4005BK
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KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
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Untitled
Abstract: No abstract text available
Text: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The
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KMM5328004BK/BKG
KMM5328104BK/BKG
KMM5328104BK/BKG
8Mx32
KMM53280
KMM5328004BK
cycles/64ms
KMM5328004BKG
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44C4000
Abstract: KM44C4000
Text: 44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4000
44C4000-6
110ns
44C4000-7
130ns
150ns
24-LEAD
44C4000
KM44C4000
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8Mx32 dram
Abstract: Samsung Capacitor sse
Text: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The
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KMM5328000AV/AVG
8Mx32
KMM5328000AV
24-pin
72-pin
5328000AV
KMM5320OOOAV
8Mx32 dram
Samsung Capacitor sse
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Untitled
Abstract: No abstract text available
Text: 44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access
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KM44C4003A,
KM44C4103A
C55-before-ES5
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364000AH is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:
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KMM5364000AH
4Mx36
24-pin
72-pin
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44c400
Abstract: No abstract text available
Text: ORAM MODULE KMM372C402AK/AS KM M372C402AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 4K Refresh, 5V G EN ERA L DESCRIPTION FEATURES The Samsung KMM372C402A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C402A consists of sixteen CMOS
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KMM372C402AK/AS
M372C402AK/AS
4Mx72
KMM372C402A
300mil
110ns
44c400
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Untitled
Abstract: No abstract text available
Text: 44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4000
44C4000-7
130ns
150ns
44C4000-6
100/jF
24-LEAD
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C400AK/AS KMM372C400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C400A consists of eighteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mii
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KMM372C400AK/AS
KMM372C400AK/AS
4Mx72
KMM372C400A
300mii
48pin
168-pin
cycles/64ms
1000mil)
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Untitled
Abstract: No abstract text available
Text: 44C4010 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 44C4010 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4010
KM44C4010
24-LEAD
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5404000AK/AKG Fast Page Mode 4Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5404000AK is a 4M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5404000AK consists of ten CMOS
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KMM5404000AK/AKG
4Mx40
KMM5404000AK
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 32 Mega Byte KMM5398000AKM Fast Page Mode 8M x39 DRAM SIM M , 4K Refresh , 5V Using 16 M DRAM with 300 mil Package G EN E R A L DES C R IPTIO N The Samsung KMM5398000AKM is a 6M bit x 39 Dynamic HAM high density memory module. The Samsung KMM5398000AKM consists of twenty
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KMM5398000AKM
24-pin
72-pin
KMM5390OOOAKM
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41C16100
Abstract: 24-PIN 41C16000
Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS
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KM418V256ALLT
KM418V256ALLTR
KM416C157AJ
KM416C157AZ
KM416C157AT
KM416C157ATR
416C157ALZ
KM416C157ALT
KM416C157ALTR
KM416C157ALLZ
41C16100
24-PIN
41C16000
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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Untitled
Abstract: No abstract text available
Text: 44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung 44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its Design is optimized for high performance applications
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KM44C4002
KM44C4002
24-LEAD
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44c4000
Abstract: No abstract text available
Text: CMOS DRAM 44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4000
44C4000
44C40in.
KM44C4000
24-LEAD
24-lpAD
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AO2020
Abstract: No abstract text available
Text: DRAM MODULE 32 Mega Byte KMM5368000AH Fast Page Mode 8Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5360OOOAH is a 0M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368000AH consists of eighteen
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KMM5368000AH
8Mx36
KMM5360OOOAH
24-pin
72-pin
KMM5366000AH
AO2020
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5364003AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM G EN E R A L DESCRIPTIO N / FEATURES • Performance Range: The Sam sung KMM5364003AK is a 4M bit x 36 D ynam ic RAM high density m em ory module using
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KMM5364003AK/AKG
4Mx36
KMM5364003AK
364003A
24-pin
28-pin
5364003AK
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5324000AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AV consists of eight CMOS
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M5324000AV/AVG
4Mx32
KMM5324000AV
24-pin
72-pin
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