KMM581000An-8
Abstract: No abstract text available
Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
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KMM581000AN
581000AN
81000A
44C1000AJ
20-pin
30-pin
130ns
581000AN-
150ns
KMM581000An-8
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44c1000
Abstract: No abstract text available
Text: 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0
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KM44C1000AL
44C1000AL-
KM44C1OOOAL-
130ns
20-LEAD
44c1000
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Untitled
Abstract: No abstract text available
Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s
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KM44C1000ASL
44C1000ASL-
130ns
150ns
10OOASL-10
100ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and
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KMM591000AN
591000AN
44C1000AJ
20-pin
41C1000BJ
30-pin
591000AN-
130ns
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TCA 290
Abstract: 41C1000 km44c1000aj 591000AN
Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and
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KMM591000AN
000AN
591000AN
44C1000AJ
20-pin
41C1000BJ
30-pin
22/iF
TCA 290
41C1000
km44c1000aj
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41C1000
Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and
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OCR Scan
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KMM591000AN
591000AN
44C1000AJ
20-pin
41C1000BJ
30-pin
22fiF
41C1000
KMM591000AN8
max5516
KMM591000AN10
KMM591000AN-8
KMM591000AN-7
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km44c1000aj
Abstract: KMM581000AN
Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
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OCR Scan
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KMM581000AN
581000AN
KMM581
44C1000AJ
20-pin
30-pin
KMM581OOOAN
km44c1000aj
KMM581000AN
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41C1000
Abstract: KMM591000AN 41C1000BJ
Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and
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OCR Scan
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MM591000AN
591000AN
KMM591
44C1000AJ
20-pin
41C1000BJ
30-pin
22jiF
KMM591OOOAN
41C1000
KMM591000AN
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44C1000AL
Abstract: No abstract text available
Text: 44C1000AL CMOS DRAM 1 M X 4 Bit C M O S Dynam ic R A M with F ast P age M o d e FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1000AL is a high speed CMOS 1 ,0 48 ,5 7 6 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1000AL
44C1000AL
KM44C1000AL
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM44C1000ASL
130ns
10OOASL-10
180ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.
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KM44C1000AL
KM44C1OOOAL
130ns
OOOAL-10
180ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC
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KM44C1000AL
KM44C1OOOAL-
180ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0
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KM44C1000ASL
KM44C1
000ASL-
000ASL-1
100ns
cycles/256ms
70/80/100ns>
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Untitled
Abstract: No abstract text available
Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM44C1000ASL
130ns
150ns
180ns
20-LEAD
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44C1000AP
Abstract: No abstract text available
Text: CMOS DRAM 44C1000A 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 b it X 4 Dynam ic Random A cce ss M em ory. Its design is optimized for high perform ance applications
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KM44C1000A
20-LEAD
44C1000AP
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Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC b4E » • 7^^142 D G 1 3 2 7 b 3b7 « S M S K 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS
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KM44C1000ASL
KM44C1OOOASL-
130ns
1000ASL-
150ns
OOOASL-10
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM44C1000A
44C1000A-
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC tCAC tue KM 44C 1000ASL- 7 70ns 20ns 130ns KM 44C 1000ASL- 8 80ns 20ns 150ns KM 44C 10OOASL-10 100ns 25ns 180ns • • • •
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KM44C1000ASL
1000ASL-
10OOASL-10
100ns
130ns
150ns
180ns
44C10
KM44C1000ASL
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM44C1000AL
130ns
150ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 b it X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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OCR Scan
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KM44C1000A
130ns
44C1000A-
150ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b4E D • 7^4142 44C1000A D D 1 3 2 4 2 TÔ4 CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess M emory.
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KM44C1000A
130ns.
KM44C1OOOA-
20-LEAD
0G1325fl
44C1000A
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41C464
Abstract: 41C258 41C1000 44C256C
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.
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KM41C256
KM424C256
424C256A.
KM424C257
KM428C128
428C256.
41C464
41C258
41C1000
44C256C
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44C1000AL 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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OCR Scan
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KM44C1000AL
130ns
1000AL-
150ns
20-LEAD
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44C1000AP
Abstract: km44c1000aj
Text: CMOS DRAM 44C1000A 1 M X 4 Bit C M O S Dynamic RAM with'Fast Page M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A cce ss Memory. Its design is optimized for high perform ance applications
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OCR Scan
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KM44C1000A
20-LEAD
44C1000AP
km44c1000aj
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