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    441MM2 Price and Stock

    TURCK Inc RKF 44-1M/M20

    Rpa |Turck RKF 44-1M/M20
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    Newark RKF 44-1M/M20 Bulk 1
    • 1 $53.6
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    TURCK Inc RSF 44-1M/M20

    Rpa |Turck RSF 44-1M/M20
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    Newark RSF 44-1M/M20 Bulk 1
    • 1 $53.6
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    TURCK Inc RSFV 44-1M/M20

    Rpa |Turck RSFV 44-1M/M20
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    Newark RSFV 44-1M/M20 Bulk 1
    • 1 $61
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    TURCK Inc RKFV 44-1M/M20 W/LN

    Rpa |Turck RKFV 44-1M/M20 W/LN
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    Newark RKFV 44-1M/M20 W/LN Bulk 1
    • 1 $64.2
    • 10 $64.2
    • 100 $64.2
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    TURCK Inc RSFV 44-1M/M20 W/LN

    |Turck RSFV 44-1M/M20 W/LN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark RSFV 44-1M/M20 W/LN Bulk 1
    • 1 $64.2
    • 10 $64.2
    • 100 $64.2
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    441MM2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit

    3121

    Abstract: 441M 9601 WEDPN4M64V-XBX 54TSOP
    Text: 4M x 64 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN4M64V-XBX* Ideal for high performance processors and memory controllers see other side for typical application block diagrams • 58% space savings Compared to equivalvent TSOP solution


    Original     		PDF WEDPN4M64V-XBX* 441mm2 125MHz) 100MHz) 75MHz) 265mm2 1060mm2 WEDPN8M65V/WEDPN8M65VR 3121 441M 9601 WEDPN4M64V-XBX 54TSOP

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz

    W332M64V-XBX

    Abstract: WEDPN16M64V-XB2X
    Text: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit W332M64V-XBX WEDPN16M64V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx64 125MHz WEDPN4M64V-XBX WEDPN4M64V-XBX 32MByte 256Mb) 100MHz 125MHz

    W332M64V-XBX

    Abstract: WEDPN16M64V-XB2X
    Text: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit W332M64V-XBX WEDPN16M64V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX FINAL* 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 32MByte 256Mb) 216-bit 125MHz co219 100MHz

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx64 125MHz WEDPN4M64V-XBX WEDPN4M64V-XBX 32MByte 256Mb) 100MHz 125MHz

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit programme50) 100MHz 125MHz WEDPN4M64V-XBX

    PC133 registered reference design

    Abstract: 128MByt
    Text: White Electronic Designs 16Mx64 Synchronous DRAM WEDPN16M64V-XB2X PRELIMINARY* FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125MHz  Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF 16Mx64 125MHz WEDPN16M64V-XB2X 128MByte 100MHz 125MHz WEDPN16M64V-ESB2 PC133 registered reference design 128MByt

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION „ High Frequency = 100, 125, 133MHz „ Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit 100MHz 125MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M64V-XB2X 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN8M64V-XB2X 8Mx64 133MHz 64MByte 512Mb) 432-bit 133MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz