Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
|
Original
|
NPT35015
EAR99
NDS-005
|
PDF
|
NPT35015
Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power
|
Original
|
NPT35015
6000MHz
EAR99
NDS-005
NPT35015D
r04350
12061C103KAT2A
JESD22-A114
JESD22-A115
j146
NPT35015DT
|
PDF
|
D4 SMD
Abstract: UT7Q512 UT8Q512 UT9Q512 UTXQ512
Text: UTXQ512 SRAM Frequently Asked Questions Introduction: The UTXQ512 are high-performance CMOS asynchronous static RAMs organized as 512K words by 8 bits. The following are questions frequently asked regarding these devices. Detailed information on these devices can be found in the UTXQ512
|
Original
|
UTXQ512
UTXQ512
100ns)
UT7Q512
250mils
430mils
32-lead
UT8Q512
D4 SMD
UT9Q512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
|
Original
|
NPT35015
EAR99
NDS-005
|
PDF
|