420 NPN SILICON RF TRANSISTOR Search Results

420 NPN SILICON RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

420 NPN SILICON RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UTV200 Abstract: No abstract text available Text: UTV200 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UTV200 is Designed for Class A. UHF Television Applications up to 860 MHz. PACKAGE STYLE .420 4L FLG. FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS	Original	PDF	UTV200 UTV200
420 NPN Silicon RF Transistor Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86 Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	PDF	VPS05605 OT-343 45GHz -j100 Dec-13-1999 420 NPN Silicon RF Transistor VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
420 NPN Silicon RF Transistor Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability	Original	PDF	VPS05605 Q62702-F1591 OT-343 45GHz -j100 Jul-14-1998 420 NPN Silicon RF Transistor transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
MRF641 Abstract: 104B Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	PDF	MRF641/D MRF641 MRF641/D* MRF641 104B
mrf641 Abstract: 1117 ADC Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	PDF	MRF641/D MRF641 mrf641 1117 ADC
MOTOROLA 381 equivalent Abstract: No abstract text available Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	PDF	MRF641/D MRF641 MRF641 MRF641/D MOTOROLA 381 equivalent
NTE339 Abstract: rf amplifier 100w Text: NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.	Original	PDF	NTE339 NTE339 80MHz. 50MHz 50MHz rf amplifier 100w
420 NPN Silicon RF Transistor Abstract: No abstract text available Text: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	Original	PDF	1-877-GOLDMOS 1301-PTB 420 NPN Silicon RF Transistor
NTE78 Abstract: No abstract text available Text: NTE78 Silicon NPN Transistor RF Power Output Description: The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power amplifiers in HF band mobile radio applications. Features: D High Power Gain D Emitter Ballasted Construction for High Reliability and Good Performance	Original	PDF	NTE78 NTE78 100mA, 250mW, 27MHz
8372 motorola Abstract: NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics	Original	PDF	MRF8372/D MRF8372R1, MRF8372 8372 motorola NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz
27mhz rf amplifier NPN transistor to220 Abstract: TO220 RF POWER TRANSISTOR NPN NTE235 Text: NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE235 NTE235 500mA 100mA 27MHz 27mhz rf amplifier NPN transistor to220 TO220 RF POWER TRANSISTOR NPN
motorola 8372 Abstract: 8372 motorola Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics	Original	PDF	MRF8372/D MRF8372 MRF8372R1, MRF8372/D motorola 8372 8372 motorola
PTB20152 Abstract: No abstract text available Text: e PTB 20152 4 Watts, 340–465 MHz UHF Linear RF Power Transistor Description The 20152 is an NPN, common emitter RF power transistor intended for 20 Vdc class A operation from 340 to 465 MHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP	Original	PDF
START420 Abstract: START420TR bf280 L005 transistor nh TRANSISTOR Text: 420 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF	Original	PDF	START420 OT343 OT343 START420 START420TR 500MHz-5GHz START420TR bf280 L005 transistor nh TRANSISTOR

ERIE CAPACITORS Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.	Original	PDF	MRF658/D MRF658 MRF658/D* ERIE CAPACITORS SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Semiconductor 1346 transistor Abstract: DIODE bfp 86 marking 53 Sot-343 Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability	OCR Scan	PDF	Q62702-F1591 OT-343 Semiconductor 1346 transistor DIODE bfp 86 marking 53 Sot-343
SOT 86 MARKING 03 Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S Text: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S	OCR Scan	PDF	BF420S T0126 15A3DIN SOT 86 MARKING 03 transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
air variable capacitor Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES	OCR Scan	PDF	2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES	OCR Scan	PDF	2SC3102 2SC3102 520MHz, 520MHz. 520MHz) 100pF to10pF to20pF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor D escription The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm	OCR Scan	PDF	2SC3629 2SC3629 520MHz,
NPN transistor a777 Abstract: 2SC3103 J55J Text: MITSUBISHI RF POWER TRANSISTOR 2SC3103 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION 2S C 3103 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES • High power gain: G peê 6 .7 d B	OCR Scan	PDF	2SC3103 520MHz, NPN transistor a777 J55J
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3104 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 1 0 4 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING Dimensions in mm cally designed for UHF power amplifier applications. FEATURES •	OCR Scan	PDF	2SC3104
air variable capacitor Abstract: mica capacitor 2SC2905 Text: MITSUBISHI RF POWER TRANSISTOR 2SC2905 NPN E P IT A XI A L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 2 9 0 5 is a silicon NPN epitaxial planar ty p e tra n sisto r spe cifi R1 cally designed fo r high pow er am plifiers applications in UHF band	OCR Scan	PDF	2SC2905 2SC2905 520MHz> 460MHz 1430M air variable capacitor mica capacitor

420 NPN SILICON RF TRANSISTOR Search Results

420 NPN SILICON RF TRANSISTOR Result Highlights (5)

420 NPN SILICON RF TRANSISTOR Datasheets Context Search

UTV200

420 NPN Silicon RF Transistor

420 NPN Silicon RF Transistor

MRF641

mrf641

MOTOROLA 381 equivalent

NTE339

420 NPN Silicon RF Transistor

NTE78

8372 motorola

27mhz rf amplifier NPN transistor to220

motorola 8372

PTB20152

START420

ERIE CAPACITORS

Semiconductor 1346 transistor

SOT 86 MARKING 03

air variable capacitor

Untitled

Untitled

Untitled

NPN transistor a777

Untitled

air variable capacitor