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    Abstract: No abstract text available
    Text: 416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface GENERAL DESCRIPTION FEATURES T he KM 416S4031B is 67,108,864 bits synchronous high data •JE D E C standard 3.3V power supply rate Dynam ic RAM organized as 4 x 1,048,576 w ords by 16


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    KM416S4031B 16Bit 416S4031BT-G 416S4031B 10/AP PDF

    KM416S4031BT-GS

    Abstract: KM416S4031 KM416S4031BT-G8
    Text: Preliminary 416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The 416S4031B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


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    KM416S4031B 16Bit KM416S4031B 10/AP KM416S4031BT-GS KM416S4031 KM416S4031BT-G8 PDF