Untitled
Abstract: No abstract text available
Text: eS&mi-donduotoi {Product*., dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A, TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201)376-8960 general purpose and switching diodes high sp««d switching Tomb = TVMI IN 4)48 IN 4149 IN 4151 IN 4152 IN 4153 IN 4154
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: f^£.mL-L.ona.u.ctoi iJ^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 general purpose and switching diodes high sp«*d switching Tomb = 25'C TypM VH-VUM m«« (V) '0 V, mo" 0)
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: IGC04R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting RC technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses
|
Original
|
PDF
|
IGC04R60D
20kHz
|
Untitled
Abstract: No abstract text available
Text: Te m ic LL4154 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical w ith the d evice 1N 4154 Applications E xtrem e fast sw itch es Absolute Maximum Ratings T, = 2 5 3C P aram eter R epetitive peak reverse voltage
|
OCR Scan
|
PDF
|
LL4154
|
aeg diode
Abstract: RG201 diode aeg ir 0588 LL4154 DIODE WITH SOD CASE
Text: AEG CORP 17E I> aOSTHeb 00QTÔ77 b LL4154 il electronic tu li Creative Technologies Silicon Epitaxial Planar Diode T - G Z - O Applications: Extreme fast switches Features: • Electrical data identical with the device 1N 4154 Dimensions in mm Terminals are tin plated
|
OCR Scan
|
PDF
|
0Q5ci45Ã
LL4154
r-G2-01
mmx50
11-jr
aeg diode
RG201
diode aeg
ir 0588
LL4154
DIODE WITH SOD CASE
|
aeg d 188
Abstract: aeg d 188 s 1000 ir 0588 DIN 4154 BR135
Text: A E G CORP 17E D 002T42b OOCHflT? 1 1N 4154 S electronic CreativeTechnotogies Silicon Epitaxial Planar Diode A p p lica tio n s: Extreme fast switches D im en sio n s In m m ottoe Cathode \ -I I - II- 11 <3.9 1 >26 g<tfl / *<0.65 • »
|
OCR Scan
|
PDF
|
rLS25Â
aeg d 188
aeg d 188 s 1000
ir 0588
DIN 4154
BR135
|
4154 diode
Abstract: DIN 4154 1N4154 41880 AC2091 4154
Text: 4M» 1 N 4154 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Abmessungen in mm Dimensions In mm »'»• 01,9 KATHODE 00.55 Normgehäuse Case 54 A 2 DIN 4 1 8 80 JEDEC DO 35
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MCL4154 vtsM A Y ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data Identical with the device 1N 4154 • M icro M elf package 96 12315 Applications Extrem e fa st sw itches Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions
|
OCR Scan
|
PDF
|
MCL4154
D-74025
01-Apr-99
|
1N4140
Abstract: 1N4305 diode in 4148 diode 1N4151
Text: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I
|
OCR Scan
|
PDF
|
1N4148
1N4140
1N4150
1N4151
1N4152
1N4153
1N4154
1N4305
1N4446
1N4447
diode in 4148
diode 1N4151
|
1N4151f
Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
Text: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX
|
OCR Scan
|
PDF
|
l77S47D
1N4151-1N4152-1N4153-1N4154
1-800-232-CQDI
7033il
1N4151f
1N4152
ditty
1N4151
1N4153
1N4154
J103
1N4151-1N4152-1N4153-1N4154
|
1n4153
Abstract: fdll4153 1N4151 equivalent 1n41s 1N4152 fdll4152
Text: FAIRCHILD SEMICONDUCTOR : S4 D F | 3 4 h T b 7 M D0274fiT 5 3469674 F A IR CH IL D S E M I C O N D U C T O R 84D 27489 D— 1N/FDLL4151/4152 1N/FDLL4153/4154 FAIRCHILD A Schlumberger Company High Speed Diodes T-c,%-V\ PACKAGES • C . . .4 pF MAX • t r r . . .2 nS (MAX) @ 10 m A, - 6 V, 1 00 SI
|
OCR Scan
|
PDF
|
D0274fiT
1N/FDLL4151/4152
1N/FDLL4153/4154
1N4154
1N4153)
1N4152
1N41S1J
1n4153
fdll4153
1N4151 equivalent
1n41s
1N4152
fdll4152
|
1N4152
Abstract: 41S21
Text: TYPES 1N4151 THRU 1N4154 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699270, O CTOBER 1 9 6 6 -R E V IS E D AU G U ST 1969 F A S T S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents 1N4151 . . 1N3604 1N4152 . . 1IM3605 . . . 1N4533
|
OCR Scan
|
PDF
|
1N4151
1N4154
1N4151
1N3604
1N4152
1IM3605
1N4533
1N4153
1N3606
1N4534
1N4152
41S21
|
g2ns
Abstract: BAW75
Text: BAW75 S iliz iu m -P la n a r-Log ik-D iode B A W 7 5 ist eine Silizium-Diode in „Double-Heat-Sink"-Technik im Glasgehäuse 56 A2 DIN 41883 D O —35 . Die Kathode ist durch einen roten Farbring gekennzeichnet. B A W 7 5 eignet sich besonders zum Einsatz als schnelle Schaltdiode in Rechenmaschinen, sowie für
|
OCR Scan
|
PDF
|
BAW75
BAW75
Q62702-A396
-26min
26min
77max.
g2ns
|
Untitled
Abstract: No abstract text available
Text: Surface Mount Devices NATL Computer Diodes continued Surface Mount Diodes LEADLESS GLASS PACKAGE BV (V) Min FDLL4151 LL-34 75 FDLL 4152 LL-34 40 Vr V Vf (V) Max 50 50 1.0 50 C PF Max trr ns Max Test Cond. Proc. Family 50 4.0 2.0 (Note 2) D4 30 0.8B 20 SeelN4152
|
OCR Scan
|
PDF
|
FDLL4151
FDLL4153
FDLL4305
LL-34
LL-34
SeelN4152
SeeIN4152
|
|
|
in4152
Abstract: IR D4-D4
Text: This Computer Diodes continued Surface Mount Diodes LEADLESS G LA SS PACKAGE BV (V) Min FDLL4151 LL-34 75 FDLL 4152 LL-34 40 Its Manufacturer C PF Max trr ns Max Test Cond. Proc. Family 50 4.0 2.0 (Note 2) D4 30 0.8B 20 SeelN4152 4.0 2.0 (Note 2) D4 50 0.88
|
OCR Scan
|
PDF
|
T-03-01
in4152
IR D4-D4
|
1n4153
Abstract: DSAIH0002540
Text: / □BE D I 1 1 ? 3 B K C INTERNATIONAL QQDGSÛ5 T | ~ 7 -0 3 -Ô 1 HIGH SPEED DIODES 1N4151 1N4153 • 1N4152 1N4154 ABSOLUTE MAXIMUM RATINGS • T_ • C 2.0 ns @ 10 mA, -6V, 100Î2 4 pF .0 2 0 * D IR Storage Temperature Range Maximum Junction Operating Temperature
|
OCR Scan
|
PDF
|
1N4151
1N4153
1N4152
1N4154
DO-35
1N4154
1N4153,
1n4153
DSAIH0002540
|
D1N4154
Abstract: 1N4154 ITT DIODE itt 1501
Text: I T T SEHICOND/ INTERISTA 50E D • 4 b ñ a ? l l 0 0 02 0 1 3 134 ■ IS I - T - c fS -o ^ 1N4154 Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in glass case DO-34 ¡ m ax.1.9^ m a x .1.9 Hr *O I a E C a tho de Cathode
|
OCR Scan
|
PDF
|
1N4154
DO-34
DO-35
DO-35)
D1N4154
1N4154
ITT DIODE
itt 1501
|
Untitled
Abstract: No abstract text available
Text: SWITCHING DIODES, GLASS PACKAGE Cent rmou* Forward Capacitance Reverse Rev Peak Voltage C Recovery Package ts i Dissipation Voltage Ctrl rent Drop Maximum Time Quantities Part P. fmW V, Volts) 1. ("A ) V, (Volta) V, (Volts) 1. {mAj Number (PF> T,. (nS) Hulkmeel
|
OCR Scan
|
PDF
|
1N4149
MMBD4201
BD1202
BD1283
BD1204
MMBD4448
OT-23
|
itt diodes
Abstract: ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125
Text: Silicon Diodes Silicon Planar Diodes in “ d o u ble-plug” D O -35 and DO-7 g la ss en ca p su la tio n s Type M axim u m R a tin g s C h a ra c te ris tic s at Tamb = 2 5 C Si fa m b 25°C DO-7 DO-35 Vr V Vrm V lo mA @ @ T a mb = ca Je ^ 25 °C P tot
|
OCR Scan
|
PDF
|
DO-35
100i2
DO-35
itt diodes
ITT 914
4148 itt
itt 1501
ITT2003
ITT700
ITT777
itt diodes 125
|
MLL5523B-1
Abstract: JANTX1N6318US JANTXV1N6317 SP6317 SP6318US
Text: Zener Regulator Diodes Micmsemi . Part Number ZEN 1 MLL4624 MLL4624-1 1N6317 1N6317US JAN1N6317 JAN1N6317US JANTX1N6317 JANTX1N6317US JANTXV1N6317 JANTXV1N6317US SP6317 SP6317US 1N5231A 1N5231A D 07 1N5231B 1N5231B (D07J MLL5231B MLL5231B-1 MLL5523B MLL5523B-1
|
OCR Scan
|
PDF
|
ZEN-46
MLL5523B-1
JANTX1N6318US
JANTXV1N6317
SP6317
SP6318US
|
BAV54-30
Abstract: 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43
Text: Silicon signal diodes * High speed switching Diodes de signa! au silicium Type - Case V B oitier V *0 Im A) v(Vp) / / max max max r V rm T a m b 2 5 °C Commutation rapide ' «F (m A ) IR ,/ V r ( n A ) / (V ) 'R / v R <mA ) / (V ) C t rr if D R S 75 tp F)
|
OCR Scan
|
PDF
|
Tamb25Â
Tamb150Â
ESM523
BAV54-30
1N4148F
BAV54-70
35P4
BAV54
1n4152f
4148f
BAY68
BAV54-100
BAW 43
|
BAX84
Abstract: 4531-2 esm 4148 1N3731 1N4149 1N4152 1N662 1N916 BAW75 BAW76
Text: silicon signal diodes diodes de signal au silicium 1H0MS0N-CSF Type •o v r -v r m Vf / if Ir / Vr |r i Vr c / *IT «F Case Tamb150°C max m A max (V) max (V) high speed switching (mA) max <nA) (V) max t*A ) (V) max max (pF) (ns) (mA) commutation rapide
|
OCR Scan
|
PDF
|
Tamb150Â
1N662
1N916
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
4531-2
esm 4148
1N3731
1N4149
1N4152
|
1n4148 D035
Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00
|
OCR Scan
|
PDF
|
100/1A
1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148*
1N4149
1N4151
1n4148 D035
1N4532
1N4148
1N4152
|
Untitled
Abstract: No abstract text available
Text: american power devices 0737135 MELF PACKAGED 0000032 1 PLANAR SWITCHING DIODES A Fenwal Electronics, Inc. Company A MERI CAN POWER DEVICES 53E T -0 Z -Ò Ì D PLANAR SWITCHING DIODES: A summary \. -¿W V'S'; V.Y These devices are used to switch currents on and off at high speed.
|
OCR Scan
|
PDF
|
DO-35
|
