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    4123 TRANSISTOR Search Results

    4123 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4123 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UNR4121

    Abstract: UNR4122 UNR4123 UNR4124 UNR412X UNR412Y transistor 4124 marking 4123
    Text: Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 • Features ● ● ● ● ● ● UNR4121 UNR4122 UNR4123 UNR4124


    Original     		PDF UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y) UNR4121 UNR4122 UNR4123 UNR4124 UNR412X UNR412Y UNR4121 UNR4122 UNR4123 UNR4124 UNR412X UNR412Y transistor 4124 marking 4123

    UNR4121

    Abstract: UNR4122 UNR4123 UNR4124 UNR412X UNR412Y
    Text: Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor Unit: mm • Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts.


    Original     		PDF UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y) UNR4121 UNR4122 UNR4123 UNR4124 UNR412X UNR412Y UNR4121 UNR4122 UNR4123 UNR4124 UNR412X UNR412Y

    ultrasonic sensor 200khz

    Abstract: 4TPE330MI IHLP4040DZER1R0
    Text: 19-4123; Rev 2; 10/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using


    Original     		PDF MAX15035 ultrasonic sensor 200khz 4TPE330MI IHLP4040DZER1R0

    4TPE330MI

    Abstract: ultrasonic sensor 200khz BUSSMANN 24v 5a smps
    Text: 19-4123; Rev 0; 5/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using


    Original     		PDF T4066-MCM 4TPE330MI ultrasonic sensor 200khz BUSSMANN 24v 5a smps

    UN4121

    Abstract: UN4122 UN4123 UN4124 UN412X UN412Y
    Text: Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits ● 3.0±0.2 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping.


    Original     		PDF UN4121/4122/4123/4124/412X/412Y UN4121 UN4122 UN4123 UN4124 UN412X UN412Y UN4121 UN4122 UN4123 UN4124 UN412X UN412Y

    Visonic

    Abstract: SMPS 12V, 5V power integrations 4TPE330MI IHLP4040DZER1R0 ultrasonic sensor 200khz
    Text: 19-4123; Rev 2; 10/08 KIT ATION EVALU E L B A AVAIL 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum


    Original     		PDF MAX15035 Visonic SMPS 12V, 5V power integrations 4TPE330MI IHLP4040DZER1R0 ultrasonic sensor 200khz

    ultrasonic sensor 200khz

    Abstract: MAX15035
    Text: 19-4123; Rev 1; 7/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using


    Original     		PDF MAX15035 100ns MAX15035 ultrasonic sensor 200khz

    50V 20A step down regulator

    Abstract: ultrasonic sensor 200khz visonic nec 3435 SMPS 12V, 5V power integrations 4TPE330MI IHLP4040DZER1R0 ntc thermistor 10k 3435
    Text: 19-4123; Rev 2; 10/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using


    Original     		PDF MAX15035 50V 20A step down regulator ultrasonic sensor 200khz visonic nec 3435 SMPS 12V, 5V power integrations 4TPE330MI IHLP4040DZER1R0 ntc thermistor 10k 3435

    Untitled

    Abstract: No abstract text available
    Text: 19-4123; Rev 2; 10/08 KIT ATION EVALU E L B A AVAIL 15A Step-Down Regulator with Internal Switches Features The MAX15035 pulse-width modulation PWM controller provides high efficiency, excellent transient response, and high DC-output accuracy. Combined with the internal low on-resistance MOSFETs, the MAX15035 provides a highly efficient and compact solution for small


    Original     		PDF MAX15035 100ns MAX15035

    Untitled

    Abstract: No abstract text available
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123


    OCR Scan     		PDF 2N4123/4124 2N4123: 2N4124: 625mW 2N4124 2N3904 10OKHz

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N 4123 2N 4124 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage v CBO 40 30 Vdc Emitter-Base Voltage


    OCR Scan     		PDF 2N4123 2N4124 b3b7255 D0T27flb

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D bb53R31 ODBfllSE A IAPX 2N 4123 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications for consumer service. P-N-P complements are 2N4125 and 2N4126.


    OCR Scan     		PDF bb53R31 2N4124 2N4125 2N4126. 2N4123 100//A;

    2N41

    Abstract: No abstract text available
    Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE _ _ . _ _ Ä ^ ^ _ . _ _ _ _ 2N4123,2N4124 GENERAL P U R P O S E SW ITC H IN G AND AM PLIFIER NPN SILICON EPIT A X IA L T R A N S IS T O R DESCRIPTION 2N 4123, 2N 4124 are NPN transistors, designed fo r general purpose switching and am p lifie r applications, feature


    OCR Scan     		PDF 2N4123 2N4124 625mW 2N4124) 2N41

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PU4123 hlk2 U412 PU3123 PU4423 h05 diode AH-05
    Text: Power Transistor Arrays PU 3123, PU 4123, PU 4423 PU3123, PU4123, PU4423 P a c k a g e D im e n s io n s PU 3123 Unit: mm 4.2 m a x . 20.5max. Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifier, S w itch in g 0.8 ±0.25 J • F e a tu re s


    OCR Scan     		PDF PU3123, PU4123, PU4423 PU3123 PU4123 50x50x2mm DARLINGTON TRANSISTOR ARRAYS 2A PU4123 hlk2 U412 PU3123 PU4423 h05 diode AH-05

    Untitled

    Abstract: No abstract text available
    Text: MICROPAC INDUSTRIES INC 1SE D • T-^l-bZ bllEbMD 00DDt3fl 5 ■ J V iM . m n > SILICON PHOTO TRANSISTOR 610S2 TYPE GS 4123 O P T O E L E C T R O N IC P R O D U C T S . D IV IS IO N G E N E R A L D E S C R IP T IO N LARGE SENSITIVE AREA TO-46 H ER M ETIC PACKAGE


    OCR Scan     		PDF 00DDt3fl 610S2

    Untitled

    Abstract: No abstract text available
    Text: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30


    OCR Scan     		PDF O-92A 2N4123 2N4124

    2N4123

    Abstract: 2N4124 2N4126 2N4125 2n4123 npn transistor
    Text: 2N 4123 PLANAR EPITAXIAL GENERAL DESCRIPTION : The 2N4123 and 2N4124 a re NPN s ilic o n p la n a r e p ita x ia l t r a n s i s t o r s designed fo r g e n e ra l purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re complementary to PNP 2N4125 and 2N4126.


    OCR Scan     		PDF 2N4123 2N4124 2N4125 2N4126. O-92A 2N4123) 2N4126 2n4123 npn transistor

    2N4123

    Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
    Text: 2N 4123 2N4124 NPN SILICO N IV IIC R O PLANAR EPITAX IA L E L -E G T R O IX H C S GENERAL DESCRIPTION ; The 2N4123 and 2N4124 a re NPN s ilic o n p la n ar e p ita x ia l tr a n s is to r s designed fo r g en e ral purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re


    OCR Scan     		PDF 2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 2N4123 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4126 2n4123 pnp

    Untitled

    Abstract: No abstract text available
    Text: 2N4123 2N4124 M AXIM UM RATINGS Rating S ym bol 2N 4123 2N 4124 C u lle c to r-E m itte r V o lta g e v CEO 30 25 V dc C o lle c to r-B a s e V o lta g e VCBO 40 30 V dc E m itte r-B a s e V o lta g e Vebo 5.0 V dc 'c 200 m Adc Pd 625 5.0 m W cC Pd 1.5 12


    OCR Scan     		PDF 2N4123 2N4124 O-226AA) 2N4123,

    2N4123

    Abstract: 2N4124 2N41 2n4123 transistor 2N3904 Tj150 TRANSISTOR 2N4124
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • C o llec to r-E m itte r Voltage: V ceo = 2 N 4 1 23: 30V 2 N 4 1 24: 25V • C o llec to r D issipation : Pc < m a x = 6 2 5 mW ABSOLUTE MAXIMUM RATINGS Ta=25°C) C haracteristic


    OCR Scan     		PDF 2N4123/4124 2N4123: 2N4124: 625mW 2N4123 2N4124 2N3904 2N4124 2N4123 2N41 2n4123 transistor Tj150 TRANSISTOR 2N4124

    hFE-200 to-92 npn

    Abstract: 2N4123 2N4124 2N4125 2N4126
    Text: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io ­ fre qu e n cy a p p lica tio n s fo r consum er service.


    OCR Scan     		PDF 2N4123 711Dfl2t D042bb2 2N4125 2N4126. 2N4123 2N4124 100juA; hFE-200 to-92 npn 2N4124 2N4126

    Untitled

    Abstract: No abstract text available
    Text: Transistors SOT23 Case Darlington miniReel ^ - . 4 " Order / Number l 7^7 h Type 500 pcs. NPN DarlingJton 73-0013 MMBTA13 MMBTA14 73-0014 PNP Darling ;ton MMBTA63 73-0063 73-0064 MMBTA64 miniBag r | Order * t Number ajHfjjj 100 pcs. SsfliSi Ratings hpE @Ic


    OCR Scan     		PDF MMBTA13 MMBTA14 MMBTA63 MMBTA64 300mA 100mA@ 125MHz

    Untitled

    Abstract: No abstract text available
    Text: lTELEDYNE SflE D components 0^17^02 GaObSTl fl ULTRA LOW rEC sat SILICON EPITAXIAL JUNCTION NPN/PNP SWITCHING TRANSISTORS 2N6S66 2N6567 7~~ 7 S - - Z J G E O M E T R Y 453, BO TH NPN & PNP T-Jr-z 3 COMPLEMENTARY TYPES 2N6566(NPN), 2N6567(PNP) r EC (sat) 2 Ohms MAX.


    OCR Scan     		PDF 2N6S66 2N6567 2N6566 2N6566-2N6567 159kHz ft-02

    ZTX109

    Abstract: low noise transistors bc109 BC214P 2N5086 2N5087 2N5209 2N5210 BC550P BC560P
    Text: PNP LOW NOISE TAB LE6 - PNP SILICON PLANAR LOW NOISE TRANSISTORS The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage VCE0 ,


    OCR Scan     		PDF BCY77P BCY65EP 2N5086 30-15k 2N5209 2N5087 2N5210 ZTX531 ZTX109 low noise transistors bc109 BC214P 2N5209 2N5210 BC550P BC560P