40n60
Abstract: 40N60B2D1 40N60B2
Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
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ISOPLUS247TM
40N60B2
40N60B2D1
IC110
065B1
728B1
123B1
40n60
40N60B2D1
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Untitled
Abstract: No abstract text available
Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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PLUS247
40N60BD1
40N60BD1
247TM
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600
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247TM
40N60BD1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet
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ISOPLUS247TM
40N60B2
40N60B2D1
IC110
ISOPLUS247
E153432
IF110
2x31-06B
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diode b34
Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110
Text: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient
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40N60BD1
PLUS247
diode b34
b34 diode
b34 datasheet
b34 844
PLUS247
B34 on
B34 transistor
C110
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40N60BD1
Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
40N60B
40N60BD1
lead40N60BD1)
728B1
40N60B
40N60
IXGR40N60BD1
IXGR40N60
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TO-264
Abstract: 40N60BD1 PLUS247
Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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40N60BD1
PLUS247
TO-264
40N60BD1
PLUS247
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40N60BD1
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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247TM
40N60BD1
728B1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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40N60B2D1
IC110
O-268
O-247
728B1
123B1
728B1
065B1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
40N60B
40N60BD1
728B1
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40N60BD1
Abstract: PLUS247
Text: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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40N60BD1
IC110
PLUS247
728B1
PLUS247
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40N60B2D1
Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2
Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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40N60B2D1
IC110
O-268
728B1
123B1
728B1
065B1
40N60B2D1
IXGH40N60B2D1
40n60b2d
40n60
40N60B2
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IXGR40N60B2D1
Abstract: 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet
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ISOPLUS247TM
40N60B2
40N60B2D1
IC110
IF110
2x31-06B
IXGR40N60B2D1
40N60B2D1
40N60B2
40N60
IXGR40N60
40n60b
IF110
ISOPLUS247
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40N60B2
Abstract: IXGH40N60B2
Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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40N60B2
IC110
O-268
40N60B2
IXGH40N60B2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data HiPerFASTTM IGBT IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600
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40N60B2
IC110
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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247TM
40N60BD1
728B1
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Untitled
Abstract: No abstract text available
Text: = IXSH 40N60B VCES = IXST 40N60B IC25 VCE sat = High Speed IGBT Short Circuit SOA Capability tfi typ 600V 75A 2.2V = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V
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40N60B
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40N60B
Abstract: C110 IXGH40N60B IXGT40N60B packages to247 footprint jedec MS-150
Text: HiPerFASTTM IGBT IXGH 40N60B IXGT 40N60B VCES IC25 VCE sat tfi = 600 V = 75 A = 2.1 V = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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40N60B
O-247
IXGT40N60B
O-268
IXGH40N60B)
40N60B
C110
IXGH40N60B
IXGT40N60B
packages to247
footprint jedec MS-150
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40n60b
Abstract: No abstract text available
Text: Advanced Technical Information IXGR 40N60BD1 IGBT with Diode ISOPLUS247TM package VCES IC25 VCE sat tfi(typ) Short Circuit SOA Capability (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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40N60BD1
ISOPLUS247TM
40n60b
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ixgr40n60b2d1
Abstract: IXGR40N60B2 IXGR40N60
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet
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ISOPLUS247TM
40N60B2
40N60B2D1
IC110
IF110
IXGR40N60B2D1)
2x31-06B
ixgr40n60b2d1
IXGR40N60B2
IXGR40N60
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ixgr40n60b2d1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet
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ISOPLUS247TM
40N60B2
40N60B2D1
IC110
IF110
IXGR40N60B2D1)
2x31-06B
ixgr40n60b2d1
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40N60BD1
Abstract: 40n60b
Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600
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40N60BD1
247TM
40N60BD1
40n60b
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information IXSH IXST High Speed IGBT 40N60B 40N60B Short Circuit SOA Capability VCES = 600 V IC25 = 75 A V CE sat = 2.2 V t Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES
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40N60B
O-247
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P 1010
Abstract: AL 102 074d
Text: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60BD1
PLUS247â
O-247
P 1010
AL 102
074d
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