Untitled
Abstract: No abstract text available
Text: FFA40UP35S tm 40A, 350V Ultrafast Diode Features • Ultrafast recovery, Trr < 55 ns @ IF = 40 A The FFA40UP35S is an utrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping Diodes in a variety of switching
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FFA40UP35S
FFA40UP35S
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Untitled
Abstract: No abstract text available
Text: Ultrafast Rectifier FFA40UP35S tm Features 40A, 350V Ultrafast Rectifier • High Speed Switching, rrt < 55ns @ IF = 40A • High Reverse Voltage and High Reliability The FFA40UP35S is utrafast rectifier with low forward voltage drop. It is silicon nitride passivated ion-implanted epitaxial planar
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FFA40UP35S
FFA40UP35S
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F40UP35S
Abstract: FFA40UP35S FFA40UP35STU DSA007099
Text: Ultrafast Rectifier FFA40UP35S tm Features 40A, 350V Ultrafast Rectifier • High Speed Switching, trr < 55ns @ IF = 40A The FFA40UP35S is utrafast rectifier with low forward voltage drop. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFA40UP35S
FFA40UP35S
F40UP35S
FFA40UP35STU
DSA007099
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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20N60A
Abstract: D-68623 20N60U1 20N60AU
Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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N60U1
N60AU1
D-68623
20N60U1
20N60AU1
20N60A
20N60U1
20N60AU
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mj 340
Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
Text: Preliminary data VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
IXSX50N60AU1S
mj 340
MJ340
50n60
50N60AU1
IXSX50N60AU1
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mj 340
Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Text: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM
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50N60AU1
O-264
D-68623
mj 340
MJ340
IXSK50N60AU1
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Untitled
Abstract: No abstract text available
Text: APTGU40DH60T Asymmetrical - Bridge PT IGBT Power Module VCES = 600V IC = 40A @ Tc = 80°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Power MOS 7 Punch Through PT IGBT - Low conduction loss
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APTGU40DH60T
200kHz
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Untitled
Abstract: No abstract text available
Text: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters
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MQFL-270L-05S
5-475V
5-350V
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Untitled
Abstract: No abstract text available
Text: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270L-05S
5-475V
5-350V
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G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1S
IXGH24N60AU1
G20N60
IXGH24N60AU1S
IXGH24N60AU1
G24N60
IXYS IXGH24N60AU1 TO-247
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h40t60
Abstract: No abstract text available
Text: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Trench and Fieldstop technology for 600 V applications offers :
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IHW40N60T
h40t60
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h40t60
Abstract: igbt 400V 40A IHW40N60T PG-TO-247-3
Text: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications
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IHW40N60T
PG-TO-247-3
h40t60
igbt 400V 40A
IHW40N60T
PG-TO-247-3
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Untitled
Abstract: No abstract text available
Text: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications
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IHW40N60T
PG-TO-247-3
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h40t60
Abstract: 40a 350v power diode
Text: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Trench and Fieldstop technology for 600 V applications offers :
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IHW40N60T
h40t60
40a 350v power diode
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Untitled
Abstract: No abstract text available
Text: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications
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IHW40N60T
PG-TO-247-3-21
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H40T60B
Abstract: h40t60 IHW40T60 OF IGBT 1000A 1000V PG-TO-247-3
Text: IHW40T60 q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum junction temperature 175 °C • Short circuit withstand time – 5µs
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IHW40T60
PG-TO-247-3
H40T60B
h40t60
IHW40T60
OF IGBT 1000A 1000V
PG-TO-247-3
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Untitled
Abstract: No abstract text available
Text: IHW40T60 q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum junction temperature 175 °C • Short circuit withstand time – 5µs
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IHW40T60
PG-TO-247-3
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DIODE h4b
Abstract: diode sg 45 APT2X31D50J pearson 411
Text: K2 A2 K1 ADVANCED POW ER Te c h n o lo g y * APT2X31D60J APT2X31D50J Al 600V S00V 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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APT2X31D60J
APT2X31D50J
OT-227
OT-227
DIODE h4b
diode sg 45
pearson 411
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sef340
Abstract: SEF341
Text: S G S- THOMSON D7E D 0017=5^7 I 73C l 7494 J C It: - I s% îî-, ; ’ r i , ~T; : i 5 I “ .•> ÏÂ Î a N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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SEF340
SEF341
SEF342
SEF343
/350V
00V/350V
SEF343
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Untitled
Abstract: No abstract text available
Text: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20
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50N60AU1
25cCto
O-247
50N80AU1
1999IXYS
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60N60A
Abstract: c5021-0
Text: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90
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50N60AU1
O-264
JEDECTO-264AA
100-C
50N60AU1
60N60A
c5021-0
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IRF420
Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350
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IRF450
IRF452
IRF440
IRF442
VNP002A*
VN5001A
IRF430
VN5002A
IRF432
IRF420
IRF420
IRF422
IRF430
IRF432
IRF440
IRF442
IRF450
IRF452
VN5001A
VN5002A
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VN64GA
Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
1rf820
IRF740
VN1001A
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
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