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    40250 POWER TRANSISTOR Search Results

    40250 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLF Rochester Electronics BLF278 - VHF Push-Pull Power VDMOS Transistor Visit Rochester Electronics Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLF1043 Rochester Electronics LLC BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    ON5040 Rochester Electronics LLC ON5040 - RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    40250 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3054

    Abstract: 40250 Transistor 40250 40372 2N6261
    Text: ^£.mi-C.ondu.ctoi Lpioduati, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 UsA 2N3054, 2N6260, 2N6261, 40250, 40572, 40910, 40911 Hometaxial-Base Medium- Power Silicon N-P-N Transistors Rugged Devices for Intermediate-Power Applications in


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    PDF 2N3054, 2N6260, 2N6261, 2N3064, 2N6261) 2N3054) 2N6260 2N3054 2N6261 2n3054 40250 Transistor 40250 40372 2N6261

    40250

    Abstract: small signal transistors
    Text: 40250 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 40250 Tj 200 hFE max 100 hfe Notes VCBO 50 hFE A 1.5m fT 1.0 Polarity NPN VCEO


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    PDF O-213AA/TO-66 07-Sep-2010 40250 small signal transistors

    RCA413

    Abstract: RCA1A16 RCA1A10 RCA1B05 BFT19B BFT28 2N6079 rca1e03 2N5415
    Text: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E


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    PDF O-204M 2N5840 BUX16C RCA413 RCA1B04 RCA1B05 2N5415 2N3439 2N3585 BUX66 RCA1A16 RCA1A10 RCA1B05 BFT19B BFT28 2N6079 rca1e03

    2N5320

    Abstract: 2N5321 2N5322 2N5323 2N5323, PNP TO-39
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 (PNP) TO-39 Metal Can Package Medium Power Amplifier and Switching Applications.


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    PDF 2N5320, 2N5321 2N5322, 2N5323 2N5320 2N5321 2N5322 C-120 2N5323 2N5323, PNP TO-39

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    BC639

    Abstract: BC637 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet
    Text: BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1


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    PDF BC635 BC637 BC639 BC637 BC635 50MHz BC639 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet

    rca1a10

    Abstract: 2N3439 complementary BFT28B RCS88 2N5415
    Text: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E


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    PDF O-204M 2N5840 BUX16C RCA413 RCA1B04 RCA1B05 2N5415 2N3439 rca1a10 2N3439 complementary BFT28B RCS88

    RCA1E02

    Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
    Text: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«


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    PDF 10Wma: 2N3440« 2N406440390" 2N3439* 2N406340385AUDIO RCA1A15 RCA1A09 RCA1A11 RCA1E02 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412

    tpl 280-4

    Abstract: ULS2800 ULS2000 ULS2003 ULS2002 IC 2804 ls2000 ULS2022 8DARLINGTON ULS-2004
    Text: INTEGRA TED POUER 02 4825898 im w m D Ë | 40250^0 □□□□2bS □ I N TE G R A T E D POWER R M 82D 0 0 2 6 5 D Darlington Transistor Arrays T E D SEMICONDUCTORS, LTD. Features Description 7 or 8 darlington power drives In single package , 50V or 95V breakdown voltage


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    PDF MA01845 tpl 280-4 ULS2800 ULS2000 ULS2003 ULS2002 IC 2804 ls2000 ULS2022 8DARLINGTON ULS-2004

    LM317 power supply 0.30 V. 20 amp

    Abstract: LM217hvK P217A LM217HV LM317T LM217K IP117A 117HV INTEGRATED POWER SEMICONDUCTORS LTD LM317 pin information
    Text: INTEGRATED POWER b? dF J 40250=10 00GQ2Ô4 3 ! i 4825898 _ INTEG R A TED POWER 8 2 0 J 0 2 4. i IN T E G R A T E D $ '2 -3 1.5 Am p Positive Adjustable Regulators R SEMICONDUCTORS , LTD. Features Description Guaranteed 1% output voltage tolerance Guaranteed 0.3% load regulation


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    PDF IP117A LM317 power supply 0.30 V. 20 amp LM217hvK P217A LM217HV LM317T LM217K 117HV INTEGRATED POWER SEMICONDUCTORS LTD LM317 pin information

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 70w amplifier 40250 Transistor 40594 40629 Transistor 40538 ic 40538 120w audio power amplifier circuit npn 40872 TA8323
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


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    PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 300W TRANSISTOR AUDIO AMPLIFIER 70w amplifier 40250 Transistor 40594 40629 Transistor 40538 ic 40538 120w audio power amplifier circuit npn 40872 TA8323

    AD149

    Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3


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    PDF AD130 AD130â AD131 AD131â AD132 AD132â AD133 AD133â NS257 T0-18 AD149 ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17

    AD143

    Abstract: ad148 ASZ1015 Germanium Power Devices
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20


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    PDF ADY11 ADY27 NS257 AD143 ad148 ASZ1015 Germanium Power Devices

    BD NPN transistors 177

    Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42
    Text: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15


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    PDF BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BD NPN transistors 177 B0186 BD139 s3 npn BD 440 NPN transistors aot 128 B0165 B0180

    iskra

    Abstract: BC107 to92 BD NPN transistors 177 BD139 BC107A BC393 BC107 BC177 BC237 BC308
    Text: ISKRA ELECTRONICS INC SSE D • 4flfl3M77 0000113 7 ■ ■ 7"- 3 /- / 7 r^ 3 f-r? Silicijevi transistor^ malih moci Silicon low power transistors BC107 : VcBO UCEO UEBO : JV V) (V) 50 45 5 A B NPN B0177 A B PNP 50 - - BC237 A B NPN 45 BC238 A B C NPN ;‘-L.


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    PDF T-31-11 BC107 BC177 BC237 BC238 BC308 BC337 BC338 BC393 iskra BC107 to92 BD NPN transistors 177 BD139 BC107A BC393

    RCA 40411 transistor

    Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411

    ca3096

    Abstract: thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays
    Text: CA3096, CA3096A, CA3096C H A R R IS S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


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    PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096A. CA3096C ca3096 thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays

    ca3096

    Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
    Text: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


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    PDF CA3096 CA3096C, CA3096A CA3096A, CA3096, CA3096C CA3096. ca3096 CA3096AE 639 TRANSISTOR PNP CA3096E

    transistor C 639 W

    Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
    Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A


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    PDF 150mA) F139B. CB-76 transistor C 639 W transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


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    PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    RCA 40250 transistor

    Abstract: audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


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    PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40250 transistor audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor

    RCA 40872

    Abstract: 40629 Transistor RCA 40852 rca 40594 RCA 40250 rca 40872 transistor 40872 rca RCA 40594 transistor RCA 411 RCA411
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


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    PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40872 40629 Transistor RCA 40852 rca 40594 RCA 40250 rca 40872 transistor 40872 rca RCA 40594 transistor RCA 411 RCA411

    RCA1E03

    Abstract: RCA1A10 2N5415
    Text: um wm m am Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts conf d V C E X (sus) V V V ^ g ls a t) —-V 'CEX-mA ‘c V CE Temp.—°C A A 25 •c •b V A A m V CEO*sus) 9 < o hFE 2N5240 FAMILY (n-p-n) Multiple Exitaxial (Cont'd) f j to 5MHz min; P j to 100 W max


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    PDF 2N5240 2N5840 BUX16C RCA413 RCA1B04 RCA1B05 -3/T0-204M 2N5415 2N3439 BFT28 RCA1E03 RCA1A10

    40872

    Abstract: 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


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    PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636