STD6NC40
Abstract: No abstract text available
Text: STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh II MOSFET TYPE VDSS RDS on ID STD6NC40 400V <1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
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STD6NC40
STD6NC40
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STD6NC40
Abstract: No abstract text available
Text: STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD6NC40 400V <1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
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STD6NC40
STD6NC40
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STD6NC40
Abstract: No abstract text available
Text: STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD6NC40 400V < 1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
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STD6NC40
STD6NC40
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F740
Abstract: SDP740
Text: SDP/F740 Green Product S a mHop Microelectronics C orp. Preliminary 400V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 400V ID 10A G D S Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 0.55 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
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SDP/F740
O-220
O-220F
SDF740
SDP740
O-220/220F
F740
SDP740
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Untitled
Abstract: No abstract text available
Text: IRF730 Data Sheet Title F73 bt 5A, 0V, m, July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified
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IRF730
IRF730
O-220AB
TB334
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Untitled
Abstract: No abstract text available
Text: IRFF330 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF330
TB334
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N40K-MT Power MOSFET 5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in
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5N40K-MT
5N40K-MT
QW-R205-050
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Untitled
Abstract: No abstract text available
Text: IRFF320 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF320
IRFF320
O-205AF
TB334
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Untitled
Abstract: No abstract text available
Text: IRFD320 Data Sheet Title FD 0 bt 5A, 0V, 00 m, July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD320
TB334
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N40 Power MOSFET 5A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 5N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
O-252
QW-R502-571
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N40 Preliminary Power MOSFET 5A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 5N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-252
QW-R502-571
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Untitled
Abstract: No abstract text available
Text: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270-12D
55-400V
55-475V
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Untitled
Abstract: No abstract text available
Text: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270-12D
55-400V
55-475V
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Untitled
Abstract: No abstract text available
Text: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V 12V 10A 86% @ 5A / 88% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270-12S
55-400V
55-475V
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Untitled
Abstract: No abstract text available
Text: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V 12V 10A 86% @ 5A / 88% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters
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MQFL-270-12S
55-400V
55-475V
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RTCA DO-160
Abstract: No abstract text available
Text: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270-12D
55-400V
55-475V
RTCA DO-160
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Untitled
Abstract: No abstract text available
Text: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270-12D
55-400V
55-475V
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Untitled
Abstract: No abstract text available
Text: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters
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MQFL-270-12D
55-400V
55-475V
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Untitled
Abstract: No abstract text available
Text: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters
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MQFL-270-12D
55-400V
55-475V
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mqfl 270 l
Abstract: MQFL-270-12S-Y-ES
Text: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-475V 12V 10A 86% @ 5A / 86% @ 10A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 155-400V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-270-12S
55-475V
55-400V
mqfl 270 l
MQFL-270-12S-Y-ES
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LZP10N40P
Abstract: 400v 5a mosfet mosfet TEST 400V power mosfet N-Channel mosfet 400v Diode 400V 5A mosfet 400V
Text: LZP10N40P N-Channel 400V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area BVDSS=400V , Application RDS ON =0.55Ω, • DC-DC Converters
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LZP10N40P
above25
to150
LZP10N40P
400v 5a mosfet
mosfet TEST
400V power mosfet
N-Channel mosfet 400v
Diode 400V 5A
mosfet 400V
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USSR DIODE
Abstract: IRF730
Text: PD-9.308K International r]Rectifier IRF730 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n = 1 lD = 5 .5A Description D ATA
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IRF730
O-220
USSR DIODE
IRF730
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Untitled
Abstract: No abstract text available
Text: Æ lltron FR DUOT DEVICES,INC. CATTALO' N-CHANNEL ENHANCEMENT MOS FET 400V , 5 .5A , l.On ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt. l Drain-Gate Vo Itage (R gs = 1•O M n ) (1) Gate-Source Voltage Cont inuous Drain Current Continuous
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300dS.
SDF330
SDF330
MIL-S-19500
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F730R
Abstract: No abstract text available
Text: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ
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tJ303271
F730/731/732/733
F730R
/731R
/732R
/733R
IBF730,
IRF731,
IRF732,
IRF733
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