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SEMIKRON SKM400GB125D Igbt Array & Module Transistor, Dual N Channel, 400 A, 3.3 V, 1.2 Kv, Module Rohs Compliant: Yes \|Semikron SKM400GB125D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SKM400GB125D	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SKM400GB125D	Bulk	18		1	1 $922.31 10 $848.54 100 $848.54 1000 $848.54 10000 $848.54	Buy Now
Bristol Electronics	SKM400GB125D		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	SKM400GB125D		32		1	1 $403.39 10 $349.68 100 $335.98 1000 $335.98 10000 $335.98	Buy Now
Richardson RFPD	SKM400GB125D				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

400GB125D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IGBT SKM Abstract: No abstract text available Text: SKM 400GB125D Absolute Maximum Ratings Symbol Conditions IGBT 7$3 $ $2; 7<3 #> (, 7 ( 4 -5 )9., 6$ 4 * (?@32%( ? A ( !2; !; 4 . F CF (> 4 5. 6$ SKM 400GB125D !2; ( 4 -5 )9., 6$ 4 * !; 4 . F CF (> 4 5. 6$ SKM 400GAL125D	Original	PDF	400GB125D 400GAL125D 400GAR125D IGBT SKM
Untitled Abstract: No abstract text available Text: SKM 400GB125D Absolute Maximum Ratings Symbol Conditions IGBT 7$3 $ $2; 7<3 #> (, 7 ( 4 -5 )9., 6$ 4 * (?@32%( ? A ( !2; !; 4 . F CF (> 4 5. 6$ SKM 400GB125D !2; ( 4 -5 )9., 6$ 4 * !; 4 . F CF (> 4 5. 6$ SKM 400GAL125D	Original	PDF	400GB125D 400GB125D 400GAL125D 400GAR125D ID33I
400GAL125D Abstract: 400g 400GAR125D Text: SKM 400GB125D ' 3 ,4 5# Absolute Maximum Ratings Symbol Conditions IGBT 6#2 '7 3 ,4 5# # '7 3 4- 5# ),- 6 9- $ ' 3 :- 5# - $ - $ = ,- 6 )- A ' 3 ,4 5# B- $ ' 3 :- 5# ,- $ - $ '7 3 )4- 5# ,:- $ ' 3 ,4 5#	Original	PDF	400GB125D 400GAL125D 400GAR125D 60747ig. 400GAL125D 400g 400GAR125D
skm400gal125d Abstract: SKM400GB125D Text: SKM 400GB125D Tc = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT VCES Tj = 25 °C 1200 V IC Tj = 150 °C 400 300 A A ICRM ICRM=2xICnom 600 A ± 20 V Tj = 125 °C 10 µs Tcase = 25 °C Tcase = 80 °C 390	Original	PDF	400GB125D 400GAL125D 400GAR125D skm400gal125d SKM400GB125D
Untitled Abstract: No abstract text available Text: SKM 400GB125D Absolute Maximum Ratings Symbol Conditions IGBT 7$3 $ $2; 7<3 #> (, 7 ( 4 -5 )9., 6$ 4 * (?@32%( ? A ( !2; !; 4 . F CF (> 4 5. 6$ SKM 400GB125D !2; ( 4 -5 )9., 6$ 4 * !; 4 . F CF (> 4 5. 6$ SKM 400GAL125D	Original	PDF	400GB125D 400GAL125D 400GAR125D
Untitled Abstract: No abstract text available Text: SKM 400GB125D Absolute Maximum Ratings Symbol Conditions IGBT 7$3 $ $2; 7<3 #> (, 7 SKM 400GAL125D !2; !; 4 . F CF (> 4 5. 6$ 7<3), $3 SKM 400GAR125D 7$3)(?, $3 7$3), Features	Original	PDF	400GB125D 400GB125D 400GAL125D 400GAR125D ID33I
SKM400GB125D Abstract: SKM400GAL125D Text: SKM 400GB125D ' 3 ,4 5# Absolute Maximum Ratings Symbol Conditions IGBT 6#2 '7 3 ,4 5# # '7 3 4- 5# ),- 6 9- $ ' 3 :- 5# - $ - $ = ,- 6 )- A ' 3 ,4 5# B- $ ' 3 :- 5# ,- $ - $ '7 3 )4- 5# ,:- $ ' 3 ,4 5#	Original	PDF	400GB125D 400GAL125D 400GAR125D 60747-1teristic, SKM400GB125D SKM400GAL125D
Untitled Abstract: No abstract text available Text: SKM 400GB125D ' 3 ,4 5# Absolute Maximum Ratings Symbol Conditions IGBT 6#2 '7 3 ,4 5# # '7 3 4- 5# ),- 6 9- $ ' 3 :- 5# - $ - $ = ,- 6 )- A ' 3 ,4 5# B- $ ' 3 :- 5# ,- $ - $ '7 3 )4- 5# ,:- $ ' 3 ,4 5#	Original	PDF	400GB125D 400GAL125D 400GAR125D 60747ig.
Untitled Abstract: No abstract text available Text: SKM 400GB125D F+ R KS TB: * 3.// %,1.2&'/. /5.+';'. Absolute Maximum Ratings Symbol Conditions IGBT UBQ0 FV R KS TB >B FV R HSL TB HKLL U XLL C F+-/. R YL TB ILL C <LL C ¥ KL U HL `/ F+-/. R KS TB IaL C F+-/. R YL TB K<L C <LL C FV R HSL TB KYYL C F+-/. R KS TB	Original	PDF	400GB125D
Untitled Abstract: No abstract text available Text: SKM 400GB125D Absolute Maximum Ratings Symbol Conditions IGBT 7$3 $ $2; 7<3 #> (, 7 SKM 400GAL125D 4B !2; !; 4 . F CF (> 4 5. 6$ $ 7<3), $3 SKM 400GAR125D 7$3)(?, $3 7$3), Features	Original	PDF	400GB125D 400GAL125D 400GAR125D
skm 40 gb 124 d Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits" Text: SKM 400 GB 125 D . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1	Original	PDF	3K7/IE32 skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"
skm 195 gb 125 dn Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107 Text: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D	Original	PDF	400GAL125D 101GD066HDS 151GD066HDS 201GD066HDS 202GB066HDs 302GB066HDs 402GB066HDs SEMIX171KH16S SEMIX191KD16S SEMIX241DH16S skm 195 gb 125 dn IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107