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    3SK233 Price and Stock

    Hitachi Ltd 3SK233XWTL6D4

    SMALL SIGNAL HIGH FREQUENCY AMPLIFIER FET Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 3SK233XWTL6D4 2,760
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    Renesas Electronics Corporation 3SK233XW-TL

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
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    Vyrian 3SK233XW-TL 449
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    3SK233 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SK233 Hitachi Semiconductor Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Original PDF
    3SK233 Unknown FET Data Book Scan PDF

    3SK233 Datasheets Context Search

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    3SK233

    Abstract: No abstract text available
    Text: 3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature MPAK-4 • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings Ta = 25°C 2 3 Item Symbol Rating Unit ——————————————————————–


    Original     		PDF 3SK233 3SK233

    3SK233

    Abstract: No abstract text available
    Text: HITACHI 3SK233-Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature MPAK-4 • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings Ta = 25°C 2 Hem Symbol Rating Unit Drain to source voltage


    OCR Scan     		PDF 3SK233------------Silicon 3SK233 3SK233

    3SK205

    Abstract: 3SK241 3SK228 3SK201 3SK220 3SK235 3SK233 3SK203 3SK204 gaas mes
    Text: - 182 - f M £ tí: £ m & m s * K 3SK197 B ÍL 3SK198 m X m Vg s * X 5* V 12 DSX ±10 35m D 150m ±100n ±8 ±6 V* (V) * 3: P d /P c h (A) % S fë i* * (W) Ig s s (max) (A) VHF TV Tuner MOS N DE UHF RF MOS N DE 13.5 DS ±8 30m D 200m ±50 ß Vg s (V)


    OCR Scan     		PDF 3SK197 3SK198 3SK199 3SK200 3SK201 5dBmin/20dBtyp 3SK227 17dBmin/19. 900MHz 3SK228 3SK205 3SK241 3SK228 3SK201 3SK220 3SK235 3SK233 3SK203 3SK204 gaas mes