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    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC ^ E D I 51E D • 3230114 0001235 032 ■ E L D _ E D I 8 4 2 5 6 C S Electronic DMlgra Inc. — — High Performance Megabit Monolithic SRAM 256KX4 Monolithic CMOS Static RAM High Speed


    OCR Scan     		256KX4 EDI84256CS as256Kx4 EDI84256LPS, MIL-STD-883, EDI84256LPS35NB EDI84256CS45NB EDI84256LPS45NB EDI84256CS55NB I84256LPS55NB PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		EDI784MS EDI784MSV 528-byte 250ms funI784MSV EDI784MSV50BB ED1784MSV50FB EDI784MSV50BB EDI7MMSV50BC 300MW PDF

    DODI151

    Abstract: EDI8M8512C EDI8M8512LP
    Text: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. DODI151 EDI8M8512LP PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell


    OCR Scan     		353011M 00D0141 8808ACL 8808ACL 8808ACL-10 8808ACL-85 8808ACL-CMHR PDF

    A571

    Abstract: EDI8M8257C EDI8M8257C25C6C
    Text: EDI8M8257C Electronic Designs Inc. i High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional eq uivalence to the monolithic two megabit


    OCR Scan     		EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 EDI8M8257LP) the93 3230im A571 EDI8M8257C25C6C PDF

    A17-A18j

    Abstract: 2555N
    Text: ^ EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		EDI8M8512C 512Kx8 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. A17-A18j 2555N PDF

    A844

    Abstract: 80 pin simm flash programmer A943 D019 D020 D021 80 lead flash simm programmer Flash SIMM 80 programmer
    Text: ^EDI _ EDI7F32512C High Performance Four Megabit Flash EEPROM [ P i i l BUD [M O T Features E L E C T R O N I C D E S I G N S IN C . 512Kx32 CMOS Flash EEPROM Module The EDI7F32512C is a 5V-0nly In-System Programmable 512Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as


    OCR Scan     		EDI7F32512C 512Kx32 EDI7F32512C 512Kx8 EDI7F32512C120BMC EDI7F32512C150BMC EDI7F32512C200BMC A844 80 pin simm flash programmer A943 D019 D020 D021 80 lead flash simm programmer Flash SIMM 80 programmer PDF

    SDP3B

    Abstract: mj03 MJ-03 PCMCIA FLASH CARD 10MB MN 5198 K SDP3BI 1431a aeg tt
    Text: W D l ED I7P1 6x x x A T A /C F A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220M B • EDI's ATA Flash Memory PC Card series offers a full Compact Flash - 2MB to 24M B range of densities and packaging options. Ideal for solid


    OCR Scan     		EDI7P16xxxATA/CFA 220MB 110MB III-175MB EDI7P16xxxA 175MB EDI7P16xxxCFA00Z ECOS91Q3 SDP3B mj03 MJ-03 PCMCIA FLASH CARD 10MB MN 5198 K SDP3BI 1431a aeg tt PDF

    Untitled

    Abstract: No abstract text available
    Text: _EDI8F81026C ^EDI Electronic Designs Inc. Commercial Eight Megabit SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout The EDI8F81026C is an 8 Megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.


    OCR Scan     		EDI8F81026C EDI8F81026C 512Kx8 323D114 PDF

    Untitled

    Abstract: No abstract text available
    Text: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory


    OCR Scan     		EDI8F8512C 512Kx8 EDI8F8512C 4096K 128Kx8 or256Kx4 100ns EDI8F8512LP) the128Kx8 PDF

    CX329

    Abstract: TME 57
    Text: EDI8F32258C 256Kx32 SRAM Module 256Kx32 Static RAM CMOS, High Speed Module fe a tu re s 256Kx32 bit C M O S Static The EDI8F32258C is a high speed 8 megabit Static R A M Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times


    OCR Scan     		EDI8F32258C 2S6Kx32 256Kx32 EDI8F32258C 128Kx8 acturefDBF32258CRev CX329 TME 57 PDF

    TME 57

    Abstract: No abstract text available
    Text: M DI EDI8F82046C 2 MegxB SRAM Module ELECTRONIC DESIGNS N C 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout I,Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    OCR Scan     		EDI8F82046C EDI8F82046C 512Kx8 E0I8F82046C EDI8F82046C20M6C EDI8F82046C25M6C EDI8F82046C35M6C TME 57 PDF