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    3B SOT 23 Search Results

    3B SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    3B SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


    Original     		PDF BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858

    Marking Code 2X

    Abstract: No abstract text available
    Text: MMBT4401 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT4403 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3B ( > 8 kV ) MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF MMBT4401 MMBT4403) OT-23 2002/95/EC Marking Code 2X

    SMD TRANSISTOR MARKING 3B

    Abstract: cmbt918
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER


    Original     		PDF ISO/TS16949 OT-23 CMBT918 C-120 SMD TRANSISTOR MARKING 3B cmbt918

    SMD TRANSISTOR MARKING 3B

    Abstract: cmbt918 transistor smd marking JT
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


    Original     		PDF OT-23 CMBT918 C-120 SMD TRANSISTOR MARKING 3B cmbt918 transistor smd marking JT

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E


    Original     		PDF OT-23 BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E


    Original     		PDF OT-23 BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B

    ts 4141 TRANSISTOR smd

    Abstract: CMBT918 transistor marking SA p sot-23 c120 equivalent SMD TRANSISTOR MARKING 3B
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT918 C-120 ts 4141 TRANSISTOR smd CMBT918 transistor marking SA p sot-23 c120 equivalent SMD TRANSISTOR MARKING 3B

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT918 C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/ UHF TRANSISTOR N–P–N transisto r Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT918 C-120

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    PN918

    Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
    Text: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBT918 PN918 OT-23 PN918 MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor

    y 331 Transistor

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 y 331 Transistor

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    CBVK741B019

    Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 CBVK741B019 F63TNR MMBT918 PN2222N RF 107 transistor tc 144

    MMBT918

    Abstract: No abstract text available
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    Original     		PDF PN918 MMBT918 OT-23 100MHz MMBT918

    TO-236AB

    Abstract: SC-7 TRANSISTOR Outlines transistor sot to236ab LH 036
    Text: PACKAGE OUTLINES PLASTIC SOT PACKAGE DESIGNATOR LH Dimensions in Millimeters 3.10 2.90 0.50 0.30 2.10 1.85 0.20 0.127 3 1 2 3.00 2.70 0.25 MIN 0.55 0° TO 8° REF 0.95 BSC 1.10 0.90 1.25 0.90 0.15 0.00 Dwg. MA-010-3B mm 0.70 3 1.00 fits SC-59A solder-pad layout


    Original     		PDF MA-010-3B SC-59A MA-011-3 MA-009-3A OT-23/TO-236AB) TO-236AB SC-7 TRANSISTOR Outlines transistor sot to236ab LH 036

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 OT-23 BC557 sot package sot-23 BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559

    BC557 sot-23

    Abstract: 3f SOT-23 BC557 sot package sot-23 transistor BC559 3F SOT23-3 BC856 BC856A BC856ALT1 BC857 BC857B
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 OT-23 BC557 sot-23 3f SOT-23 BC557 sot package sot-23 transistor BC559 3F SOT23-3 BC856 BC856A BC857 BC857B

    Untitled

    Abstract: No abstract text available
    Text: BZM55C Series Zener diode Features 1. Saving space 2. Fits onto SOD 323/SOT 23 footprints 3. Micro Melf package Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol


    Original     		PDF BZM55C 323/SOT 300K/W 1-Jul-2004

    MMBT3960

    Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2


    OCR Scan     		PDF OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    OCR Scan     		PDF MMBT918 PN918 OT-23 400il, PN918

    DG40B

    Abstract: DY TRANSISTOR PN918
    Text: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R


    OCR Scan     		PDF PN918 MMBT918 PN918 OT-23 bSD113D Q40bQc DG40B DY TRANSISTOR

    MMBD501

    Abstract: MMBD201 marking a2x sot23 MMBD201 4s MBAV70 5c 70 marking A7x marking 5AX a1x sot23 MBAW56
    Text: MOTOROLA SC DIODES/OPTO 1â D SOT-23 DIODES • -W — STYLE 12 t.3b?aSS G G 7 A b E b — STYLE 9 STYLE 11 2 0 - \4— 3 0 - 3I 02 2 y- |4~-00 1 P | -3 0 -H - O0 22 01 SINGLE COMMON CATHODE A 3 SERIES


    OCR Scan     		PDF OT-23 STYLE19 STYLE18 MBAL99 MMBD6050X MMBD914X MBAS16 MMBV3700 MMBV3401 MMBD101 MMBD501 MMBD201 marking a2x sot23 MMBD201 4s MBAV70 5c 70 marking A7x marking 5AX a1x sot23 MBAW56

    AC 187 npn transistor TO 1

    Abstract: MMBT918 PN918
    Text: u c t o r " PN918 C MMBT918 TO-92 SOT-23 B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R


    OCR Scan     		PDF PN918 MMBT918 OT-23 AC 187 npn transistor TO 1 MMBT918 PN918