Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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amic a290021t-70
Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29002/A290021
amic a290021t-70
A290021T-70
A290021TL-70
A29002
A290021
A290021L
IN3064
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200
8-Bit/128
16-Bit)
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28f800b5
Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Text: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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AB-60
AP-611
AB-65
28f800b5
28F002BC
28F008
28F200B5
28F800
AB-60
28f400
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MT28F002B3
Abstract: MT28F200B3
Text: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks
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MT28F002B3
MT28F200B3
40-Pin
48-Pin
16KB/8K-word
100ns
MT28F200B3,
16/256K
MT28F002B3
MT28F200B3
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555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
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FPT-32P-M24
Abstract: MBM29F002BC MBM29F002TC
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20868-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements
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DS05-20868-3E
9F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
32-pin
FPT-32P-M24
MBM29F002BC
MBM29F002TC
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Untitled
Abstract: No abstract text available
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS
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M29F200BT
M29F200BB
256Kb
128Kb
TSOP48
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ba1030
Abstract: M29W200BB
Text: M29W200BT M29W200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W200BT
M29W200BB
256Kb
128Kb
TSOP48
ba1030
M29W200BB
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SA612
Abstract: LCC-40P-M02 MBM29LV002B
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20827-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002T-10/-12/MBM29LV002B-10/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20827-3E
MBM29LV002T-10/-12/MBM29LV002B-10/-12
40-pin
F9803
SA612
LCC-40P-M02
MBM29LV002B
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29F002
Abstract: A1317 AS29F002B-120SC
Text: High Performance 256Kx8 5V CMOS Flash EEPROM AS29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)
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AS29F002
29F002
A1317
AS29F002B-120SC
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siemens vdo
Abstract: MB91F362GA MB91F369GAPQS1 BYX 13 400 R CRYSTAL CMAC FR51 TDT55 tdt7 lcd timer
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-16401-3E 32-bit RISC Microcontroller CMOS FR50 Family MB91360G Series MB91FV360GA/F362GA/F369GA • DESCRIPTION The Fujitsu MB91360G series is a standard microcontroller containing a wide range of I/O peripherals and bus
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DS07-16401-3E
32-bit
MB91360G
MB91FV360GA/F362GA/F369GA
MB91360G
F0201
siemens vdo
MB91F362GA
MB91F369GAPQS1
BYX 13 400 R
CRYSTAL CMAC
FR51
TDT55
tdt7 lcd timer
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0212
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amic a290021t-70
Abstract: A29002T-70 A29002 A290021 A290021L IN3064
Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29002/A290021
amic a290021t-70
A29002T-70
A29002
A290021
A290021L
IN3064
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements
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Am29F200AT/Am29F200AB
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in
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28F200BL-T/B,
28F002BL-T/B
x8/x16
28F200BL-T,
28F200BL-B
16-bit
32-bit
28F002BL-T,
28F002BL-B
16-KB
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Untitled
Abstract: No abstract text available
Text: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser
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IS28F002BV/BLV
16-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
IS28F002BLVT-120TI
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Untitled
Abstract: No abstract text available
Text: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture
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28F200BX-T/B,
28F002BX-T/B
x8/x16
28F200BX-T,
28F200BX-B
16-bit
32-bit
28F002BX-T
28F002BX-B
16-KB
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Untitled
Abstract: No abstract text available
Text: in te i. 28F200BL-T/B, 28F002BL-T/B 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6V ■ Expanded Temperature Range 20°C to +70°C ■ x8/x16 Input/Output Architecture
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28F200BL-T/B,
28F002BL-T/B
x8/x16
28F200BL-T,
28F200BL-B
16-bit
32-bit
28F002BL-T,
28F002BL-B
28F200B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY in te l 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption — 20 mA Typical Read Current x8-Only Input/Output Architecture — Space-Constrained 8-bit
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28F002BC
16-KB
96-KB
128-KB
AP-610
28F002/200BX-T/B
28F004/400BX-T/B
28F002/200BV-T/B
28F004/400BV-T/B
4fl2bl75
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Untitled
Abstract: No abstract text available
Text: Advance Information C A T 29F 150 1.5 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: End of Write Detection — One 16-KB Boot Sector
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16-KB
32-KB
64-KB
32-pin
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3165* intel
Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
Text: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 28F200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B
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46Ebl7b
QQ7b353
28F200BX-T/B,
28F002BX-T/B
x8/x16
28F200BX-T,
28F200BX-B
16-bit
32-bit
28F002BX-T
3165* intel
82360SL
intel 80386SL
twc np 6001
28f200 tsop
intel 28f200bx
28F002BX
28F002BX-B
28F200BX
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Untitled
Abstract: No abstract text available
Text: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors
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8/128K
AS29F200T-120TI
AS29F200B-5SSC
AS29F200B-70SC
AS29F200B-70SI
AS29F200B-90SC
AS29F200B-90SI
AS29F200B-120SC
AS29F200B-120SI
AS29F200T-S5SC
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)
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AS29F200
256KX8/128Kx
256Kx8
AS29F200B-70TC
AS29F200B-70TI
AS29F200T-70TC
AS29F200T-70TI
AS29F200B-70SC
AS29F200B-70SI
AS29F200T-70SC
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