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Untitled Abstract: No abstract text available Text: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in ¾ 3 1 advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced	Original	PDF	3VD324500YL 3VD324500YL O-220
500VMOS Abstract: No abstract text available Text: 3VD324500YL 3VD324500YL 高压MOSFET芯片描述 ¾ 3VD324500YL为采用硅外延工艺制造的N沟道增强型500V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	PDF	3VD324500YL 3VD324500YL 3VD324500YLN 500VMOS O-220 500VVGS 10VID 20VVDS 500VMOS
Untitled Abstract: No abstract text available Text: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified;	Original	PDF	3VD324500YL 3VD324500YL O-220 3780m 2780m
3780m Abstract: No abstract text available Text: 3VD324500YL 3VD324500YL 高压MOSFET芯片描述 Ø 3VD324500YL为采用硅外延工艺制造的N沟道增强型500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD324500YL 3VD324500YL 3VD324500YLN 500VMOS O-220 3780m 2780m 500VVGS 3780m