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    Untitled

    Abstract: No abstract text available
    Text: 372C400CK/CS K M M 3 7 2 C 4 1 OCK/ CS DRAM MODULE K M M 3 7 2 C 4 0 0 C K / C S & K MM3 72C 41 OCK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V FEATURES G E N E R A L DESCRI PTION The Sam sung KM M 372C40 1 0C is a 4M x72bits Dynamic


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    PDF KMM372C400CK/CS 4Mx72 372C40 x72bits KMM372C40 cycles/64m cycles/32m

    IBM 1Mx4

    Abstract: 1MX16
    Text: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V


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    PDF 1Mx64 364C120C KMM364C124A C-421000AA64 HB56A164EJ 364V120C 364V124A 372C122C 372C125A 05H0902 IBM 1Mx4 1MX16

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


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    PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32

    Untitled

    Abstract: No abstract text available
    Text: 372C400BK/BS KMM372C41OBK/BS DRAM MODULE 372C400BK/BS / KMM372C41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung 372C40 1 OB is a 4M bit x 72 Dynamic RAM high density memory module. The


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    PDF KMM372C400BK/BS KMM372C41OBK/BS KMM372C400BK/BS KMM372C41 4Mx72 KMM372C40 300mil 48pin 168-pin

    372C

    Abstract: No abstract text available
    Text: 2. PRODUCT GUIDE Org. Part No. Feature Based DRAM Speed ns PCB Height Refresh cycle/ms c/s 50/60/70 60/70 1,000 1024/16 NOW 1,000 1024/16 NOW 50/60/70 1,000 1024/16 TBD 60/70 1,000 1024/16 TBD 8 Byte DIMM ( 5 V ) 1Mx64 1 Mx72 2Mx64 2Mx72 4M x64 4MX72 K M M 3 6 4 C 1 2 0C


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    PDF 1Mx64 372C120C1 372E120C1 372C122C 2Mx64 2Mx72 1Mx32 332V104A 332V124A 2Mx32 372C

    Untitled

    Abstract: No abstract text available
    Text: 372C404BS DRAM M ODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 7 2 C40 4B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t C A C P (a c c e s s time from CAS) and tA A P (a c c e s s time from c o l. addr.) in AC CHARACTERISTICS.


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    PDF KMM372C404BS 4Mx72 4Mx16 KMM372C404B 4Mx72bits 4Mx16bits 54Max)