3680 MOSFET
Abstract: TSM4425 p-channel mosfet TSM4425CS marking sop-8 P-Channel MOSFET code L 1A 27BSC
Text: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram ● Advance Trench Process Technology
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TSM4425
TSM4425CS
20erty
3680 MOSFET
TSM4425
p-channel mosfet
marking sop-8
P-Channel MOSFET code L 1A
27BSC
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Tsm4425
Abstract: No abstract text available
Text: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram Advance Trench Process Technology
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TSM4425
TSM4425CS
Tsm4425
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR862DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR862DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR870ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR870ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK20N60
AOK20N60
AOK20N60L
O-247
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S1209
Abstract: SIR870 SiR870ADP
Text: SPICE Device Model SiR870ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR870ADP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S1209
SIR870
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR862DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR862DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
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AOT20N60/AOTF20N60
AOT20N60
AOTF20N60
AOT20N60L
AOTF20N60L
O-220F
O-220
AOTF20N60
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AOTF20n60
Abstract: No abstract text available
Text: AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
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AOT20N60/AOTF20N60
AOT20N60
AOTF20N60
AOT20N60L
AOTF20N60L
O-220
O-220F
ParaN60
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MIL-S-19500
Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S
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2N497
2N498
2N656
2N657
2N696
2N697
2N1131
2N1132
2N718A
2N1613
MIL-S-19500
2902n
TRANSISTOR 2n697
2N3700 DIE
MIL-S-19500 FOR POWER LINE TRANSISTOR
2N497
2N497 JAN
2n2222 jan
2N657
2N910 JAN
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SSF7508
Abstract: 3680 MOSFET 130a Gate Turn-off top switch to220 25Starting N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Text: SSF7508 Feathers: ID=130A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=80V
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SSF7508
SSF7508
3680 MOSFET
130a Gate Turn-off
top switch to220
25Starting
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
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si4654
Abstract: Si4654DY Si4654DY-T1-E3
Text: New Product Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 29 nC
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Si4654DY
Si4654DY-T1-E3
08-Apr-05
si4654
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Untitled
Abstract: No abstract text available
Text: FDS7088N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS7088N7
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Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR862DP
2002/95/EC
SiR862DP-T1-GE3
18-Jul-08
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SI4654DY
Abstract: No abstract text available
Text: New Product Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 29 nC
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Si4654DY
Si4654DY-T1-E3
18-Jul-08
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S0901
Abstract: Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3
Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4654DY
Si4654DY-T1-E3
Si4654DY-T1-GE3
18-Jul-08
S0901
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Untitled
Abstract: No abstract text available
Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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SiR870DP
2002/95/EC
SiR870DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR862DP
2002/95/EC
SiR862DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSZ025N04LS DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,40V BSZ025N04LS 1Description TSDSON-8FL enlarged source interconnection
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BSZ025N04LS
IEC61249-2-21
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25N95K3
Abstract: STW25N95K3 Stw25n95
Text: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances
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STW25N95K3
O-247
O-247
25N95K3
STW25N95K3
Stw25n95
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STW25N95K3
Abstract: 25N95K3 ENERGY SAVING UNIT Diagram transistor st make 803 B2 marking code Zener
Text: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized
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STW25N95K3
O-247
STW25N95K3
25N95K3
ENERGY SAVING UNIT Diagram
transistor st make 803
B2 marking code Zener
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Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR862DP
2002/95/EC
SiR862DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: FCH110N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 35 A, 110 m Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH110N65F
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transistor g23 mosfet
Abstract: 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922
Text: TELEFUNKEN ELECTRONIC fllC D ITilLitFQIKlKiMelectronic â^SQQ^b 000530b CF 922 Marked with: CF 4 Creative Technologies N-Channel-GaAs-MESFET-Tetrods Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration;
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000530b
569-GS
transistor g23 mosfet
3680 MOSFET
transistor g23
CF-922
1SS140
marking code wa sot 143
CF922
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