HY5DU283222Q
Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Text: HY5DU283222Q 128M 4Mx32 GDDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02
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HY5DU283222Q
4Mx32)
222MHz
200/183MHz
166MHz
250MHz
100pin
HY5DU283222Q
HY5DU283222Q-4
HY5DU283222Q-45
HY5DU283222Q-5
HY5DU283222Q-55
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PDF
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DA65
Abstract: K4D263238M-QC40 K4D263238 K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
Text: Target 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 0.3 June 2000 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238M
128Mbit
32Bit
250MHz
DA65
K4D263238M-QC40
K4D263238
K4D263238M
K4D263238M-QC45
K4D263238M-QC50
K4D263238M-QC55
K4D263238M-QC60
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PDF
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K4D263238M-QC40
Abstract: K4D263238
Text: Preliminary 128M DDR SDRAM K4D263238M 222 / 250 MHz 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.1 March 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238M
128Mbit
32Bit
K4D263238M-QC40
K4D263238M-QC45
K4D263238M-QC50
25tCK
K4D263BAa
K4D263238
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K4D623238B-QC50
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D623238B-QC
64Mbit
32Bit
100-Pin
K4D623238B-QC60
K4D623238B-QC50
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PDF
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Untitled
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
256Mb
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02
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Original
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HY5DU283222Q
4Mx32)
222MHz
200/183MHz
166MHz
250MHz
100pin
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PDF
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K4D623238B-GC45
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D623238B-GC
64Mbit
32Bit
144-Ball
K4D623238B-GL*
100MHz
K4D623238B-GC45/-50/-55/-60
K4D623238B-GC33
K4D623238B-GC45
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DU663222Q 64M 2Mx32 DDR SDRAM HY5DU663222Q Revision 0.8 March 2001 Rev. 0.8 / Mar. 2001 This document is a general product description and is subject to change without notice. 64Mb (2Mx32) Double Data Rate SDRAM HY5DU663222Q CONTENTS 1. 2Mx32 DDR SDRAM Brief Information - 3
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HY5DU663222Q
2Mx32)
2Mx32
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DV641622AT 64M 4Mx16 DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3
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HY5DV641622AT
4Mx16)
4Mx16
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DU641622AT 64M 4Mx16 DDR SDRAM HY5DU641622AT Revision 0.6 April 2001 Rev. 0.6 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DU641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3
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HY5DU641622AT
4Mx16)
4Mx16
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DU643222AQ 64M 2Mx32 DDR SDRAM HY5DU643222AQ Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (2Mx32) Double Data Rate SDRAM HY5DU643222AQ CONTENTS 1. 2Mx32 DDR SDRAM Brief Information - 3
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HY5DU643222AQ
2Mx32)
2Mx32
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K4D62323HA
Abstract: k4d62323ha-qc60 samsung ddr-3
Text: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 February 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D62323HA
64Mbit
32Bit
K4D62323HA-QC50
K4D62323HA-*
conditions10)
4Mx32
2Mx32
K4D62323HA
k4d62323ha-qc60
samsung ddr-3
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PDF
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HY5DU283222Q
Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Text: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02
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Original
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HY5DU283222Q
4Mx32)
200MHz
250/222MHz
300mA
370mA
200/183MHz
HY5DU283222Q
HY5DU283222Q-4
HY5DU283222Q-45
HY5DU283222Q-5
HY5DU283222Q-55
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PDF
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K4D623238B-QC50
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D623238B-QC
64Mbit
32Bit
100-Pin
K4D623238B-QL*
100MHz
K4D623238B-QC60
K4D623238B-QC50
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PDF
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hy5du663222
Abstract: HY5DU663222Q-6
Text: HY5DU663222Q 64M 2Mx32 DDR SDRAM HY5DU663222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9/ Dec. 01
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HY5DU663222Q
2Mx32)
HY5DU663222
864-bit
2Mx32
100pin
HY5DU663222Q-6
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PDF
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Untitled
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.6 January 2003 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D623238B-GC
64Mbit
32Bit
144-Ball
K4D623238B-GC40
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PDF
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Untitled
Abstract: No abstract text available
Text: 128M DDR SDRAM K4D263238A-G 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D263238A-G
128Mbit
32Bit
144-Ball
K4D26323RA-GC36
K4D263238A-GC2A
K4D26323RA-GC2A
K4D26323AA-GL*
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PDF
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K4D263238
Abstract: K4D263238M-QC40
Text: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.0 December 2000 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D263238M
128Mbit
32Bit
K4D263238M-QC60
2Mx32
4Mx32
K4D263238
K4D263238M-QC40
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PDF
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K4D623238B-QC50
Abstract: K4D623238B-QC55
Text: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D623238B-QC
64Mbit
32Bit
100-Pin
K4D623238B-QL*
100MHz
K4D623238B-QC60
K4D623238B-QC50
K4D623238B-QC55
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PDF
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HY5DV641622AT
Abstract: No abstract text available
Text: HY5DV641622AT 64M 4Mx16 DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3
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HY5DV641622AT
4Mx16)
4Mx16
HY5DV641622AT
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PDF
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K4C560838C-TCD3
Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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Original
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K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
K4C560838C-TCD3
K4C560838C-TCD4
K4C560838C-TCDA
K4C561638C-TCD3
K4C561638C-TCD4
K4C561638C-TCDA
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PDF
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K4D623238B-GC45
Abstract: K4D623238B-GC K4D623238B-GC33 K4D623238B-GC40 K4D623238B-GC50 K4D623238B-GC55 K4D623238B-GC60
Text: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.4 September 2002 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D623238B-GC
64Mbit
32Bit
144-Ball
K4D623238B-GC40
K4D623238B-GL*
100MHz
K4D623238B-GC45
K4D623238B-GC
K4D623238B-GC33
K4D623238B-GC50
K4D623238B-GC55
K4D623238B-GC60
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PDF
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HY5DU283222Q
Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Text: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9/ Nov. 01
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Original
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HY5DU283222Q
4Mx32)
200MHz
370mA
300mA
183/200MHz
200/183Mhz
HY5DU283222Q
HY5DU283222Q-4
HY5DU283222Q-45
HY5DU283222Q-5
HY5DU283222Q-55
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PDF
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Untitled
Abstract: No abstract text available
Text: 64M 4Mx16 DDR SDRAM H Y 5 D V 6 4 1 6 2 2 A T Revision 0.3 April 2001 T his docum ent is a general product description and is subject to change w ithout notice. 85 HY5DV641622AT 64Mb(4Mx16) Double Data Rate SDRAM PRELIMINARY D ESC R IPTIO N The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the
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OCR Scan
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4Mx16)
HY5DV641622AT
HY5DV641622
864-bit
4Mx16
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PDF
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