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    35N120 IGBT Search Results

    35N120 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    35N120 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    35N120

    Abstract: 35n120 IGBT IXLH35N120A
    Text: High Voltage, High speed IGBT IXLH 35N120 A VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original     		PDF 35N120 O-247 35n120 IGBT IXLH35N120A

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    35n120

    Abstract: IXLH35N120A 35N120A 35n120 IGBT
    Text: IXLH 35N120 A VCES High Voltage, High speed IGBT = 1200 V = 58 A = 3.6 V ^C25 V CE sat Short Circuit SOA Capability P re lim in a ry d a ta Maximum Ratings Symbol Test Conditions v CES T j = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C;1 RGE „ = 1 M fi


    OCR Scan     		PDF 35N120 O-247 GDD3474 IXLH35N120A 35N120A 35n120 IGBT

    IXLH35N120A

    Abstract: No abstract text available
    Text: □IXYS High Voltage, High speed IGBT IXLH 35N120 A VC E S = 1200 V ^C 25 = 58 A = 3.6 V V C E sa t Short Circuit SOA Capability P r e lim in a r y d a ta ° V ^ i ) ÔE S ym bo l T est C o n d itio n s v CES ^ = 25 °C to 150°C V ’ CGH Tj = v* GES V GEM


    OCR Scan     		PDF 35N120 IXLH35N120A

    Untitled

    Abstract: No abstract text available
    Text: IXSH 35N120A High Voltage, High speed IGBT VCES = 1200 V = 70 A C25 V CE sat = 4V Short Circuit SOA Capability §J $ Maximum Ratings Symbol Test Conditions VC E S T, = 25°C to 150°C 1200 v CGR T, = 25°C to 150°C; R QE = 1 M£2 1200 V v GES v GEM Continuous


    OCR Scan     		PDF 35N120A O-247 35N120 35N120AU1

    35n120

    Abstract: No abstract text available
    Text: □IXYS High Voltage, High speed IGBT IXSH 35N120A VCES C25 v CE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions v CES T j = 25° C to 150° C 1200 V VCQR T j = 25°C to 150°C; RGE= 1 MQ 1200 V vQES vGEM Continuous ±20 V T ransient


    OCR Scan     		PDF 35N120A O-247 O-247 35N120 35N120AU1

    IXSX35N120AU1

    Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
    Text: High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (IXSX35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C


    OCR Scan     		PDF 247TM IXSX35N120AU1 IXSX35N120AU1S IXSX35N120AU1S) lo150 O-247 35N120AU1 35N12QAU1S K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download