Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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Untitled
Abstract: No abstract text available
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
FMA3058-000
FMA3058-000SQ
FMA3058-000S3
DS090609
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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RRS01
Abstract: vibrating sensor alarm SiRRS01 RRS01-01 RRS01-05 BAE Systems RRS0 VIBRATION SENSOR mtbf SHOCK SENSOR JAPAN
Text: SiRRS01 Angular Rate Sensor The SiRRS01 angular rate sensor has evolved from the highly successful Vibrating Structure Gyroscope developed by BAE SYSTEMS, which has been in service since 1990. This MEMS implementation of our VSG technology, offers continued advancement in miniaturisation and reliability.
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SiRRS01
35gram
300ms
000hrs
RRS01
vibrating sensor alarm
RRS01-01
RRS01-05
BAE Systems
RRS0
VIBRATION SENSOR mtbf
SHOCK SENSOR JAPAN
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X-band Gan Hemt
Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
19dBm
FMA246-000
FMA246-000SQ
FMA246-000S3
DS090309
X-band Gan Hemt
A246
MIL-HDBK-263
x-band mmic
MIL-STD-1686
X-band GaAs pHEMT MMIC Chip
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X-band Gan Hemt
Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3015
FMA3015
FMA3015-000
FMA3015-000SQ
DS090306
FMA3015-000S3
X-band Gan Hemt
84-1 CONDUCTIVE EPOXY
MIL-HDBK-263
84-1 LMIT
x-Band Hemt Amplifier
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FMA3058
Abstract: MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
20GHz
-12dB
-10dB
FMA3058-000
MIL-HDBK-263
fma-3058
GaN Amplifier 20GHz
DS090609
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x-Band Hemt Amplifier
Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
FMA246-000
FMA246-000SQ
FMA246-000S3
DS110503
x-Band Hemt Amplifier
x-band mmic
X-band GaAs pHEMT MMIC Chip
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FPD750
Abstract: MIL-HDBK-263 InP HBT transistor DS090609
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
25mx750m
OT343,
12GHz
38dBm
MIL-HDBK-263
InP HBT transistor
DS090609
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Untitled
Abstract: No abstract text available
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
FMA246-000SQ
FMA246-000
FMA246-000S3
DS110503
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1j25
Abstract: SRS1020
Text: SRS1020-SRS10150 TAIWAN m . SEMICONDUCTOR Pb RoHS COMPLIANCE 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers D2PAK * .185 4.70 .175(4.44) Features_ -y~ -Y -y~ For surface mounted application Ideal for autom ated pick & place Low power loss, high efficiency
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SRS1020
SRS10150
MIL-STD-202,
35grams
SRS10150)
1j25
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